IDM02G120C5XTMA1 - 1200V 2A CoolSiC G5 Schottky Diode | Infineon
부품 번호: IDM02G120C5XTMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $2.98 | $29.80 |
| 100 | $2.42 | $242.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.78 | $1,780.00 |
IDM02G120C5XTMA1 개요
A Schottky diode is a unipolar semiconductor rectifier formed by a metal-semiconductor junction rather than a PN junction, so it conducts as soon as the forward voltage exceeds the barrier potential and exhibits negligible reverse-recovery charge. SiC Schottky diodes in particular extend the operating envelope of the Schottky principle into kilovolt-class blocking voltages that would be impractical with silicon, and they are widely deployed in switched-mode power supplies, solar inverters, UPS, and EV charging stages where high switching frequency and high efficiency must coexist with high blocking voltage.
Headline specifications include 1200 V repetitive peak reverse voltage, 2 A average forward current, low forward voltage, near-zero reverse-recovery charge, and an operating junction temperature range that spans the industrial and over-temperature regimes. The combination of high blocking voltage, low stored charge, and a small DPAK footprint allows designers to shrink magnetics and heatsinks while pushing switching frequencies into the hundreds of kHz range.
The Generation 5 thin-wafer process further reduces conduction losses and improves surge-current robustness compared with Generation 2, while the PG-TO252-2 real-2-pin package provides a low-inductance, surface-mount form factor compatible with high-density PCB layouts. This architecture lets designers replace silicon ultrafast rectifiers with a SiC part that drops into the same PCB footprint while reducing switching losses, EMI, and thermal stress on companion switches.
Typical applications include solar string inverters and PV boost stages, three-phase SMPS PFC and LLC converters, EV onboard chargers and DC fast-charging stations, telecom and server rectifiers, and industrial motor drives where high efficiency at elevated switching frequencies is required. The part is also well matched to SiC MOSFET half-bridges from Infineon's CoolSiC family, such as the IMW120R030M1H and IMW120R045M1H.
When designing with this diode, minimize loop inductance between the diode and its companion switch, use a low-ESR ceramic or film output capacitor, and respect the recommended mounting torque / pad layout for DPAK thermal performance. A small RC snubber may further reduce ringing on the switched node.
This page synthesizes distributor pricing, drop-in alternatives in the same DPAK footprint, and practical layout guidance that is not consolidated on the manufacturer datasheet.
드롭인 대체품: IDM02G120C5XTMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IDH02G120C5
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STPSC2H12
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
C3D02060E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
LSIC2SD120C05
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NDSH120SC2A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IDM02G120C5XTMA1 최대 정격 & 전기적 특성
| Diode Type | Silicon Carbide (SiC) Schottky |
| Technology Generation | CoolSiC Generation 5 |
| Repetitive Peak Reverse Voltage (VRRM) | 1200 V |
| Average Forward Current (IF(AV)) | 2 A |
| Reverse Recovery Charge (Qrr) | 0 nC (zero reverse recovery) |
| 동작 접합 온도 범위 | -55C to +175C |
| 패키지 | PG-TO252-2 (DPAK real-2-pin) |
| 실장 유형 | Surface Mount |
| Configuration | Single diode |
| Typical Applications | Solar inverters, UPS, 3-phase SMPS, EV charging |
| MSL 레벨 | 1 (per JEDEC J-STD-020) |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| 할로겐 프리 | Yes |
IDM02G120C5XTMA1 핀 구성
| 핀 1 | Cathode (K) — Cathode terminal |
| 핀 2 | Anode (A) — Anode terminal (also tied to mounting tab on DPAK real-2-pin variant) |
Forward Current vs Forward Voltage
일반적인 애플리케이션
IDM02G120C5XTMA1 적합 용도: 6 애플리케이션s: Solar String Inverter Boost Diode, Three-Phase PFC and LLC Rectifier, EV Onboard Charger PFC Stage, Industrial UPS and Energy Storage, Telecom Server Rectifier, Industrial Motor Drive Brake Chopper.
Solar String Inverter Boost Diode
The IDM02G120C5XTMA1 is used as the boost or blocking diode in 1-3 kW solar string inverters, where the DC bus routinely approaches 1000 V. The 1200 V VRRM provides a 20% safety margin above typical 1000 V open-circuit PV string voltages, and the 2 A average forward current matches sub-3 kW residential inverter power classes. Zero reverse-recovery charge eliminates the switching losses that limit silicon ultrafast diodes at the high switching frequencies (50-150 kHz) used in modern LLC and HERIC inverter stages. Placed in series with the boost switch or as the blocking diode in a HERIC topology, the IDM02G120C5XTMA1 helps inverters reach weighted efficiencies above 98% under partial-load conditions, which is critical for CEC and EU efficiency regulations.
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Three-Phase PFC and LLC Rectifier
In three-phase power-factor-correction (PFC) and LLC converter stages of industrial SMPS and telecom rectifiers, the IDM02G120C5XTMA1 serves as the secondary-side rectifier. The 1200 V blocking rating tolerates resonant voltage overshoot in LLC tanks, while the zero reverse-recovery charge eliminates the dead-time losses and duty-cycle loss that silicon PN rectifiers impose. The DPAK package's small footprint allows placement close to the transformer secondary, minimizing parasitic inductance that would otherwise cause voltage spikes and EMI. At 2 A average current, this diode fits 1-3 kW three-phase rectifier modules commonly used in server and telecom -48 V plants; pairing with CoolSiC MOSFETs such as the IMW120R045M1H yields a fully SiC power stage.
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EV Onboard Charger PFC Stage
The IDM02G120C5XTMA1 is well suited to the PFC and DC-DC stages of 3.3-7 kW onboard EV chargers that operate from 400 V or 800 V traction batteries. The 1200 V rating is required for 800 V systems where DC-link transients can reach 1000 V, and the 2 A current class matches the auxiliary PFC boost diodes or totem-pole freewheeling paths. Zero reverse-recovery charge is essential for totem-pole bridgeless PFC topologies that switch the diode as an active rectifier at 100+ kHz - silicon parts would self-destruct from Qrr losses. The DPAK package's automotive-grade footprint and Infineon's automotive qualification make this diode a natural fit for EV power electronics.
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Industrial UPS and Energy Storage
In industrial uninterruptible-power-supply (UPS) and battery-energy-storage-system (BESS) bidirectional converters, the IDM02G120C5XTMA1 acts as the high-side rectifier in the AC-DC and DC-AC stages. The 1200 V blocking voltage handles 690 V industrial AC rectified to ~980 V DC with margin, and the 2 A current matches the smaller converter modules used in modular UPS architectures. The thin-wafer CoolSiC G5 technology reduces conduction losses relative to G2, improving inverter efficiency at the part-load operating points common in UPS redundancy (N+1) configurations. The surface-mount DPAK package also enables automated assembly for high-volume UPS manufacturing.
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Telecom Server Rectifier
In -48 V telecom and hyperscale server rectifier modules rated 1-3 kW, the IDM02G120C5XTMA1 functions as the secondary-side rectifier diode in the high-voltage bus converter that steps 380-400 V DC down to 48 V via an LLC topology. The 1200 V rating covers the wide-input rectified AC range and transient excursions, and the 2 A current matches the lower-power rectifier module classes. Zero Qrr losses enable switching frequencies above 100 kHz, which shrinks magnetic components and increases power density - critical for the 50-100 W/in^3 targets of modern server PSUs. The DPAK footprint is pin-compatible with legacy silicon rectifiers, allowing direct replacement on existing designs.
추천
Industrial Motor Drive Brake Chopper
In industrial variable-frequency drives (VFDs) and servo motor drives, the IDM02G120C5XTMA1 is used as the brake-chopper diode that dissipates regenerative energy during motor deceleration. The 1200 V rating handles the back-EMF spikes that exceed the DC bus voltage during fast braking transients, and the 2 A continuous rating covers small-to-medium servo drives in the 1-3 kW class. Zero reverse-recovery charge prevents the diode-induced voltage spikes that can damage companion IGBTs or MOSFETs during chopper switching, while the DPAK package provides a low-inductance surface-mount thermal path suitable for integration with the drive's existing power board.
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추천 제품 요약
엔지니어링 참조 데이터: IDM02G120C5XTMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IDH02G120C5 | STPSC2H12 | C3D02060E | LSIC2SD120C05 | NDSH120SC2A |
|---|---|---|---|---|---|---|
| Package | DPAK (PG-TO252-2) | TO-220-2 (different footprint) | DPAK (TO-252) - same | DPAK (TO-252) - same | DPAK (TO-252) - same | DPAK (TO-252) - same |
| Brand | Infineon | Infineon (same brand) | STMicroelectronics | Wolfspeed | Littelfuse | Nexperia |
| Repetitive Peak Reverse Voltage (VRRM) | 1200 V | 1200 V | 1200 V | 600 V | 1200 V | 1200 V |
| Average Forward Current (IF(AV)) | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
| Reverse Recovery Charge (Qrr) | ~0 nC (zero) | ~0 nC (zero) | ~0 nC (zero) | ~0 nC (zero) | ~0 nC (zero) | ~0 nC (zero) |
| Technology Generation | CoolSiC G5 (thin wafer) | CoolSiC G5 (thin wafer) | ST 2nd-gen SiC | Wolfspeed C3D | Littelfuse Gen-2 SiC | Nexperia 1200V SiC |
| Mounting Type | Surface Mount (DPAK) | Through-Hole (TO-220) | Surface Mount (DPAK) | Surface Mount (DPAK) | Surface Mount (DPAK) | Surface Mount (DPAK) |
| RoHS / Lead-Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
주요 차별점
- CoolSiC Generation 5 thin-wafer technology with reduced conduction loss vs Generation 2 (vs STPSC2H12 (STMicroelectronics 2nd-gen SiC))
- DPAK real-2-pin (PG-TO252-2) pinout matches the largest installed base of 1200 V SiC Schottky diodes (vs Wolfspeed C3D02060E (600 V, not 1200 V))
- Established CoolSiC G5 automotive and industrial second-source ecosystem (vs Littelfuse LSIC2SD120C05 / Nexperia NDSH120SC2A)
설계 노트
The DPAK (PG-TO252-2) package dissipates heat primarily through the cathode tab, which must be soldered to a copper pour with thermal vias for adequate heatsinking. Estimated: at IF=2 A and VF=1.2 V typical, conduction loss is ~2.4 W; with the DPAK junction-to-ambient thermal resistance of approximately 50 C/W on a 1 oz copper pour, junction temperature rise is ~120 C above ambient, so derate to ~1.5 A in enclosed designs without forced cooling.
Minimize the high-frequency switching loop between the diode and its companion CoolSiC MOSFET, keeping the loop area under 1 cm^2 to limit parasitic inductance. Use a wide cathode-trace and place the diode immediately adjacent to the MOSFET's drain node. For 1200 V-class designs, maintain at least 1.5 mm clearance and 1.0 mm creepage between the high-voltage anode/cathode pads and any low-voltage signal traces to satisfy IEC 60950 / IEC 62368 spacing rules.
Do not assume any 1200 V SiC Schottky diode is a drop-in replacement for any other - verify the DPAK pinout is real-2-pin (PG-TO252-2, anode and cathode only) rather than 3-pin (with an unused center pin). Mixing 3-pin and 2-pin DPAK footprints will mis-wire the diode. Also verify peak forward surge current rating (IFSM) if the application includes inrush or short-circuit conditions - SiC Schottky IFSM is typically lower than silicon ultrafast diodes.
규정 준수 정보
RoHS and REACH compliance per Infineon product page. Lead-free and halogen-free per PG-TO252-2 package documentation. Not AEC-Q100 qualified as a discrete diode - check automotive-grade variants if required.
