IRLR3410TRRPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon
부품 번호: IRLR3410TRRPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.34 | $1.34 |
| 10 | $1.18 | $11.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.58 | $580.00 |
IRLR3410TRRPBF 개요
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power-conversion circuits. The N-channel enhancement-mode MOSFET hierarchy spans discrete MOSFET -> power MOSFET -> N-channel MOSFET -> HEXFET family -> IR MOSFET process, and IRLR3410TRRPBF sits within Infineon's fifth-generation HEXFET lineup. Its low RDS(on) and fast switching speed position it as a building block for switch-mode power supplies, motor drives, and load-switching applications where conduction losses dominate thermal design.
Key features include 105 mOhm maximum RDS(on) at VGS=10V, 22.7 nC total gate charge, logic-level gate drive threshold (typically 1V at 250uA), and full avalanche ruggedness rating. The device is fully avalanche-rated, fast-switching, and uses an advanced process technology to achieve the lowest possible on-resistance per silicon area. The D-Pak surface-mount package offers a low thermal resistance path and is compatible with automated pick-and-place assembly.
Typical applications span DC-DC converters, low-voltage motor control, solenoid and relay drivers, battery protection circuits, synchronous rectification, and hot-swap controllers. The wide safe operating area and 100V breakdown voltage also make it suitable for 48V telecom rails and industrial bus switching. When designing with this part, gate-drive strength and gate-loop inductance are the dominant factors determining switching loss; use a dedicated gate driver IC and minimize source-inductance for reliable operation above 100 kHz.
드롭인 대체품: IRLR3410TRRPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRLR3410TRRPBF (동일 폼 팩터 및 풋프린트) — 차이점: MSL Level, Technology, Mounting Type, Avalanche Rated.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRLR3410TRPBF
✅ 드롭인✓ 재고 있음
$0.81 / 개
데이터시트 보기 →AUIRLR3410TR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRLR3410PBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRFR3410
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRLR3410TRRPBF 최대 정격 & 전기적 특성
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 17 A |
| Power Dissipation (PD, Tc=25C) | 79 W |
| On-Resistance (RDS(on) max at VGS=10V) | 105 mOhm |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1 V (at 250 uA) |
| Total Gate Charge (Qg) | 22.7 nC |
| Technology | IR HEXFET (IR MOSFET process) |
| 패키지 | TO-252AA (DPAK), surface mount |
| 실장 유형 | Surface Mount |
| Packaging Style | Tape & Reel Right (TRR) |
| Avalanche Rated | Yes |
| 동작 온도 범위 | -55C to +175C (junction) |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) |
| MSL 레벨 | 1 (per JEDEC J-STD-020) |
IRLR3410TRRPBF 핀 구성
| 핀 1 | Gate — Gate drive input; logic-level compatible (VGS(th) ~1V at 250uA) |
| 핀 2 | Drain — Drain terminal (also connected to metal tab on back of package) |
| 핀 3 | Source — Source terminal; reference for gate drive and main current return |
IRLR3410 안전 동작 영역
일반적인 애플리케이션
IRLR3410TRRPBF 적합 용도: 6 애플리케이션s: Synchronous Rectification in DC-DC Converters, Low-Voltage Motor Drive (H-Bridge), Solenoid and Relay Driver, Battery Protection and Hot-Swap Controller, Load Switch and Power Rail Switching, Telecom 48V Hot-Swap and OR-ing.
Synchronous Rectification in DC-DC Converters
IRLR3410TRRPBF is well suited as the low-side synchronous rectifier in buck converters handling up to about 15A continuous load. Its 105 milliohm RDS(on) at VGS=10V keeps conduction loss low - at 10A load the FET dissipates roughly 10.5W - and the 22.7 nC total gate charge allows switching up to several hundred kHz without excessive driver loss. Placed across the catch diode with a gate driver referenced to the switching node, it improves overall converter efficiency by 3-6% versus a Schottky-diode freewheeling path. The DPAK package footprint provides a low thermal-resistance path, and the part is fully avalanche-rated for abnormal operating conditions.
추천
Low-Voltage Motor Drive (H-Bridge)
In 24V or 36V brushed DC motor drives, IRLR3410TRRPBF serves as the switching element in an H-bridge. With 17A continuous drain current and 100V VDS rating, the device tolerates the back-EMF spikes of motors up to several horsepower without avalanche breakdown. The logic-level gate threshold (1V at 250uA) allows direct PWM drive from a 3.3V or 5V microcontroller. Each FET dissipates approximately I^2 x R = 14W at 12A RMS, so PCB copper pours of at least 1 square inch per leg are required to keep the junction below 150C in continuous-duty applications.
추천
Solenoid and Relay Driver
IRLR3410TRRPBF is widely used as a low-side driver for solenoids, relays, and valves in industrial automation. The 17A drain rating covers most 24V solenoid coils (typically 1-5A), and the 100V VDS provides margin against the inductive kick when the coil de-energizes. Add a flyback diode across the load or use the part's avalanche rating to absorb turn-off energy. Logic-level gate drive means a single MCU GPIO can switch the FET directly without an intermediate driver stage, reducing BOM cost and PCB area in multi-channel driver boards.
추천
Battery Protection and Hot-Swap Controller
IRLR3410TRRPBF functions as the main disconnect switch in battery-pack protection circuits and hot-swap controllers. Its low RDS(on) (105 milliohm) limits voltage drop and heat during normal operation, while the 100V VDS rating provides headroom for transient events on 24V or 48V battery stacks. Used with a current-sense amplifier and a controller IC, the part enables programmable inrush-current limiting and short-circuit protection. The avalanche rating is essential for absorbing the energy stored in PCB and cable inductance when the FET turns off under load.
추천
Load Switch and Power Rail Switching
In distributed power architectures, IRLR3410TRRPBF acts as a load-disconnect switch on 12V, 24V, or 48V rails to power-gate downstream subsystems. With logic-level gate drive and 17A current capability, it can be controlled directly by a microcontroller GPIO. The low RDS(on) keeps steady-state drop below 50mV even at 0.5A, preserving rail accuracy. Add a pull-down resistor on the gate to ensure the FET stays off during MCU reset, and consider a soft-start RC network to limit inrush into downstream bulk capacitance.
추천
Telecom 48V Hot-Swap and OR-ing
IRLR3410TRRPBF is a good fit for 48V telecom systems where the 100V VDS rating provides comfortable margin above the 48V nominal bus. Used as an OR-ing FET in redundant -48V supplies, the low RDS(on) keeps dissipation under 5W at typical 10A load currents, and the logic-level gate drive enables active current-sharing controllers. The avalanche rating also handles transient ringing on long telecom bus cables without requiring external TVS protection.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRLR3410TRRPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRLR3410TRPBF | AUIRLR3410TR | IRLR3410PBF |
|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID @ TC=25C) | 17 A | 17 A | 17 A | 17 A |
| RDS(on) max @ VGS=10V | 105 mOhm | 105 mOhm | 105 mOhm | 105 mOhm |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC | 22.7 nC | 22.7 nC |
| Automotive Qualification (AEC-Q101) | No (industrial/consumer) | No | Yes (AEC-Q101) | No |
| Packaging Style | Tape & Reel Right (TRR) | Tape & Reel Left (TRPBF) | Tape & Reel (TR) | Tube |
| Logic-Level Gate Drive | Yes (VGS(th) ~1V at 250uA) | Yes | Yes | Yes |
| RoHS / Lead-Free | Yes (PBF suffix) | Yes (PBF suffix) | Yes | Yes (PBF suffix) |
주요 차별점
- Logic-level gate drive threshold (vs IRFR3410 (D2PAK package))
- AEC-Q101 automotive qualified variant available (vs IRLR3410TRPBF (non-automotive))
- Tape-and-reel right orientation option (vs IRLR3410TRPBF (left-oriented reel))
설계 노트
Estimated: at ID=10A continuous and RDS(on)=105 mOhm (max), the IRLR3410TRRPBF dissipates roughly P=I^2 x R = 10.5W. The DPAK package has typical theta_JA of about 50 C/W on a 1-square-inch copper-pour footprint on a 2-layer FR-4 board, yielding a junction-to-ambient temperature rise of approximately 525C above ambient - clearly excessive. For continuous 10A operation, either reduce load current, use a larger copper pad (>= 3 sq in), or parallel two IRLR3410TRRPBF devices. Always verify with the manufacturer SOA curve for the specific thermal environment.
Place the DPAK drain tab on a copper pad of at least 50 mm^2 (roughly 7 mm x 7 mm) on the top layer, with thermal vias to a bottom-layer copper pour to spread heat. Keep the high-current drain and source traces wide and short, and route the gate trace away from the drain-source switching node to minimize coupling. Place the gate-drive turn-off resistor (typically 10-100 ohm) close to the FET gate pin to dampen parasitic ringing caused by gate-source capacitance and source-inductance.
Do not drive IRLR3410TRRPBF directly from a high-impedance source - the gate-oxide capacitance and Miller effect during drain-voltage transitions can cause unintended turn-on. Always use a dedicated gate-driver IC with adequate peak source/sink current (>= 1A) for switching above 100 kHz. Also, the IRLR3410TRRPBF (TRR reel orientation) is functionally identical to IRLR3410TRPBF (TR reel orientation); choose based on your pick-and-place machine configuration, not on electrical behavior. Failure to do so can cause pick errors on the assembly line.
규정 준수 정보
RoHS compliant per the PBF suffix designation. Halogen-free per Infineon product page. For AEC-Q101 automotive qualification, use AUIRLR3410TR instead.
