IXA55I1200HJ - 1200V XPT IGBT, 84A, 290W | IXYS | ISOPLUS247
부품 번호: IXA55I1200HJ ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $12.43 | $12.43 |
| 10 | $11.62 | $116.20 |
| 100 | $10.85 | $1,085.00 |
| 500 | $9.74 | $4,870.00 |
| 1,000 | $8.95 | $8,950.00 |
| 3,000 | $7.8 | $23,400.00 |
IXA55I1200HJ 개요
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that combines the high-current, low-saturation-voltage characteristics of a bipolar transistor with the voltage-driven, fast-switching gate of a MOSFET. IGBTs sit in the power-switching hierarchy between power MOSFETs and thyristors: IGBT -> power transistor -> discrete semiconductor -> power electronic switch. They dominate medium-to-high voltage, medium-frequency switching applications such as motor drives, solar inverters, and UPS systems where voltages exceed 600V and currents exceed tens of amps.
Key features of the IXA55I1200HJ include a low VCE(sat) of 2.1V at rated current, high-current handling capability, high-speed switching, low total energy losses (Eon + Eoff), and low current fall times. The XPT thin-wafer technology reduces switching losses versus standard PT IGBTs while maintaining rugged short-circuit withstand. The device is specified for an operating junction temperature up to 150 C.
The ISOPLUS247 package provides an electrically isolated mounting surface, eliminating the need for an external insulator pad and sil-pad when bolting the part to a heatsink. This simplifies mechanical assembly, improves thermal cycling reliability, and reduces the BOM. The package outline follows JEDEC TO-247AD with the screw-hole and Lmax exceptions noted in the datasheet.
Typical applications for the IXA55I1200HJ include industrial motor drives (low-voltage AC inverter stages up to 690V class), solar PV string inverters, uninterruptible power supplies (UPS), welding power converters, and induction-heating resonant converters. The 1200V rating provides sufficient margin for 480V three-phase rectified DC bus operation (peak ~680V) and 600V-class drives.
When designing with this device, ensure gate-drive voltage is at least 15V (typical +15V/-5V or +15V/0V) to fully saturate the IGBT and minimize conduction losses. The isolated package allows direct heatsink mounting without an insulating thermal interface material, but thermal compound is still required to minimize junction-to-ambient thermal resistance.
This page synthesizes distributor pricing, parametric comparisons, and practical design notes drawn from the IXYS datasheet and cross-reference searches, providing engineers with information not found on any single manufacturer or distributor product page.
드롭인 대체품: IXA55I1200HJ — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IXA45I1200HJ
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXA60I1200HJ
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXA70I1200HJ
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXA75I1200HJ
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXA55I1200HJ-101
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXA55I1200HJ 최대 정격 & 전기적 특성
| 트랜지스터 유형 | IGBT - Single (PT/XPT) |
| Collector-Emitter Voltage (Vces) | 1200 V |
| Continuous Collector Current (Ic) | 84 A |
| 컬렉터-이미터 포화 전압 (Vce(sat)) | 2.1 V at rated Ic |
| Maximum Power Dissipation (Pd) | 290 W |
| Operating Junction Temperature (Tj) | -40 C to +150 C |
| Technology | XPT (eXtreme-light Punch-Through) |
| 패키지 / 케이스 | ISOPLUS247 (TO-247AD-derivative, isolated tab) |
| 핀 수 | 3 |
| 실장 유형 | Through Hole |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
IXA55I1200HJ 핀 구성
| 핀 1 | Gate — Gate control input (voltage-driven, 15V typical) |
| 핀 2 | Collector — Power collector terminal (high-voltage DC+) |
| 핀 3 | Emitter — Power emitter terminal (return path) |
Forward Bias 안전 동작 영역 (FBSOA)
일반적인 애플리케이션
IXA55I1200HJ 적합 용도: 6 애플리케이션s: Industrial Motor Drives, Solar PV String Inverters, Uninterruptible Power Supplies (UPS), Welding Power Converters, Induction Heating Resonant Converters, Switch-Mode Power Supply (SMPS) PFC + Inverter.
Industrial Motor Drives
The IXA55I1200HJ is well suited for the inverter stage of 480V three-phase AC motor drives (VFDs) rated up to ~22 kW. Its 1200V Vces rating provides >500V margin above the rectified 480V bus peak (~680V), while the 84A continuous collector current supports motor current ratings of several tens of amps. The XPT construction reduces switching losses at the typical 4-16 kHz PWM frequencies used in IGBT-based drives, improving inverter efficiency and reducing heatsink size. The ISOPLUS247 isolated tab eliminates the need for a thermal-interface insulator pad, simplifying mechanical assembly and improving long-term thermal cycling reliability compared with non-isolated TO-247 IGBTs.
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Solar PV String Inverters
In three-phase solar string inverters, the IXA55I1200HJ serves as the primary switching element in the boost and inverter stages feeding 480V AC grid. The 1200V Vces rating comfortably handles 1000V DC string inputs with margin for transient overvoltages, while the 84A continuous rating supports string currents up to ~70A after derating. The XPT low-switching-loss characteristic improves inverter efficiency at the 16-20 kHz switching frequencies used in transformerless string inverter designs, directly increasing energy harvest. The isolated package tab also simplifies the heatsink design in IP65 outdoor enclosures where grounding isolation is critical.
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Uninterruptible Power Supplies (UPS)
Online double-conversion UPS systems in the 10-30 kVA range use IGBTs in both the PFC rectifier and the inverter stage; the IXA55I1200HJ is well matched for the inverter stage where 1200V devices switch the 700-800V DC bus to synthesize 208/480V AC output. The 84A continuous current supports kVA-class inverters, and the XPT technology reduces switching losses to keep inverter efficiency above 96% even at partial loads. The rugged short-circuit capability of the XPT die design improves fault-survival during output overloads and short-circuit conditions, a critical UPS reliability metric.
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Welding Power Converters
Inverter-based welding machines (MIG/TIG/Stick) in the 200-400A output class use IGBTs to switch the rectified mains at 10-30 kHz before stepping down through a high-frequency transformer. The IXA55I1200HJ's 1200V rating handles the 540V rectified bus from 380-480V three-phase input, and its 84A continuous rating supports the high peak currents demanded by arc strikes. XPT technology's low switching losses translate directly to cooler operation, smaller magnetics, and lighter weight in portable welders, while the rugged die design tolerates the repetitive short-circuit transients inherent to arc welding loads.
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Induction Heating Resonant Converters
Resonant inverters for industrial induction heating operate at 20-100 kHz with LC tank circuits driving induction coils for forging, brazing, or cooktop applications. The IXA55I1200HJ's low switching losses at high frequencies make it suitable for these designs, where ZVS (zero-voltage switching) conditions further reduce losses and EMI. The 1200V rating handles the DC bus from rectified 480V three-phase mains, and the 84A rating supports the multi-kW power levels typical of industrial heating. The isolated tab simplifies the heatsink integration where the heatsink is grounded for safety in consumer cooktop applications.
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Switch-Mode Power Supply (SMPS) PFC + Inverter
High-power three-phase SMPS designs for industrial equipment, telecom rectifiers, and EV charging stations combine a PFC boost stage with a DC-DC or DC-AC inverter, both of which can use the IXA55I1200HJ as the switching element. The 1200V Vces rating supports bridgeless PFC topologies operating from 480V AC input, and the XPT low-loss switching characteristic supports the high switching frequencies that shrink magnetics and filter capacitors. The isolated tab simplifies the safety-isolation strategy in EV chargers where the heatsink must remain at chassis ground potential.
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추천 제품 요약
엔지니어링 참조 데이터: IXA55I1200HJ — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IXA45I1200HJ | IXA60I1200HJ | IXA70I1200HJ | IXA75I1200HJ | IXA55I1200HJ-101 |
|---|---|---|---|---|---|---|
| Brand | IXYS | IXYS | IXYS | IXYS | IXYS | IXYS |
| Package | ISOPLUS247 | ISOPLUS247 - same | ISOPLUS247 - same | ISOPLUS247 - same | ISOPLUS247 - same | ISOPLUS247 - same |
| Collector-Emitter Voltage (Vces) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Continuous Collector Current (Ic) | 84 A | 45 A | 60 A | 70 A | 75 A | 84 A |
| Technology | XPT | XPT | XPT | XPT | XPT | XPT |
| Operating Junction Temperature | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C |
| Mounting Tab Isolation | Isolated (ISOPLUS247) | Isolated | Isolated | Isolated | Isolated | Isolated |
주요 차별점
- Isolated mounting tab (no external insulator needed) (vs Standard non-isolated TO-247 IGBTs (e.g., IRGP4710DPbF))
- XPT technology with low switching losses (vs Standard PT IGBTs of same voltage class)
- 1200V rating with 84A continuous current in ISOPLUS247 (vs Lower-current 1200V IXYS parts (IXA45I1200HJ at 45A, IXA60I1200HJ at 60A))
설계 노트
Estimated: at full 84A load with Vce(sat)=2.1V, conduction loss is ~176W; assuming 20 kHz switching with Eon+Eoff ~3 mJ per pulse, switching loss adds ~50W at 50% duty, for a total dissipation near 200W. The ISOPLUS247 isolated tab requires a thermal compound (e.g., 0.1 mm-thick silicone-based) between the package tab and heatsink; the isolated tab does NOT include an internally bonded insulator, so thermal compound is mandatory and the heatsink can be grounded without an external mica or silicone pad.
Gate-drive loop inductance must be minimized: keep the gate-emitter drive traces short and wide (preferably a twisted pair or parallel return trace directly above the gate trace). High dV/dt at the collector (~10 kV/us typical for XPT IGBTs) couples through the Miller capacitance (Cres) to the gate; a 10-100 ohm gate resistor plus a gate-emitter pull-down resistor (10-100 kohm) prevents parasitic turn-on. Place the gate-driver IC as close as possible to the IGBT pins, ideally within 2 cm, to keep the gate-drive loop area below ~1 cm^2.
For through-hole TO-247/ISOPLUS247 footprint, use 2 oz copper on top/bottom layers for the collector and emitter pads to handle the ~84A continuous current. Thermal vias (0.3 mm drill, 0.5 mm pad, 1 mm pitch) under the emitter pad area transfer heat to inner copper planes; compute the required via count using the inner-plane copper area and a thermal conductivity of ~400 W/m-K for FR4 with 1 oz copper fill. The collector pin pad does NOT need thermal vias because the heat path is through the tab, not the collector pin.
Do not exceed Vge of +/-20V (verify the exact datasheet value) - over-voltage on the gate destroys the thin gate oxide. Avoid operating the IGBT in its linear (active) region during normal switching - this concentrates power dissipation in a small area and causes thermal runaway. For desaturation (short-circuit) protection, monitor Vce during the on-state with a fast comparator and shut down the gate within 5-10 us to protect the die; the XPT construction tolerates short circuits better than older PT designs but is not immune.
IGBT switching at high dV/dt (5-15 kV/us typical) generates common-mode EMI through both the heatsink capacitance (especially isolated packages where tab-to-heatsink capacitance is the primary CM path) and the Miller capacitance. Use a CM choke on the DC bus and a Y-capacitor network from DC+ and DC- to chassis ground to reduce CM noise. A small RC snubber (10-100 ohm + 0.1-1 nF) across the collector-emitter can reduce voltage overshoot and ringing, trading a small amount of switching loss for substantially lower EMI.
규정 준수 정보
RoHS compliant per IXYS product page. Not AEC-Q100 qualified (industrial/consumer power converter use, not automotive). Halogen-free status not specified in retrieved datasheet excerpts.
