IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD
부품 번호: IXDH20N120 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $8.42 | $8.42 |
| 10 | $7.55 | $75.50 |
| 100 | $6.6 | $660.00 |
| 500 | $5.85 | $2,925.00 |
| 1,000 | $5.2 | $5,200.00 |
IXDH20N120 개요
A high-voltage IGBT (Insulated Gate Bipolar Transistor) is a minority-carrier power switch that combines a MOSFET gate input with a bipolar output structure, giving the low gate-drive power of a MOSFET and the low conduction loss of a bipolar transistor. NPT technology uses a uniform, non-heavily-doped drift region so the device exhibits a square RBSOA, short-circuit withstand (tSC) capability, and a positive temperature coefficient for VCE(sat), which simplifies thermal design when several IGBTs are paralleled. IGBTs sit in the discrete-semiconductor hierarchy IGBT -> power transistor -> discrete semiconductor -> semiconductor.
Key features specified by the IXYS datasheet include VCES = 1200 V, IC25 = 38 A continuous collector current, PC = 200 W power dissipation, square RBSOA with no latch-up, short-circuit ruggedness, and an MOS input for voltage control. The optional D1 suffix variant integrates an ultra-fast FRED anti-parallel diode for half-bridge and full-bridge converters, allowing a single part number to handle the inductive freewheeling current. The TO-247AD industry-standard outline gives drop-in compatibility with thousands of TO-247 designs already in service.
This NPT architecture uses an epitaxial drift region to balance conduction loss and switching loss, making it more rugged under short-circuit and avalanche stress than older PT designs. The square RBSOA and tSC rating mean designers can size gate-drive fault protection around a well-defined worst-case locus rather than derating aggressively.
Typical applications include AC motor speed control for industrial drives, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), and welding inverters. Designers also deploy the IXDH20N120 in induction-heating tank circuits and solar inverters up to 1000 VDC bus.
When designing with this part, choose a gate driver with at least +15 V Vge and a tight UVLO around 12 V to ensure the IGBT sits fully in saturation during high di/dt events. Pair the device with a low-ESL commutation loop and a properly rated snubber or gate-emitter resistor (typically 10 ohm) to control dv/dt and ringing.
This page synthesizes IXYS distributor pricing, drop-in TO-247AD alternatives, and practical design notes not found in the manufacturer's datasheet alone.
드롭인 대체품: IXDH20N120 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IXDH20N120 (동일 폼 팩터 및 풋프린트) — 차이점: RBSOA, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IXDH20N120D1
✅ 드롭인✓ 재고 있음
$3.3 / 개
데이터시트 보기 →IXGH20N120A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDH30N120
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FGA20N120FTD
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRG4PH50UD2-E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDH20N120 최대 정격 & 전기적 특성
| Manufacturer | IXYS (acquired by Littelfuse) |
| Part Number | IXDH20N120 |
| Device Type | NPT (Non-Punch Through) IGBT |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC25) | 38 A |
| Gate-Emitter Voltage (VGES, continuous) | +/- 20 V |
| Power Dissipation (PC) | 200 W |
| RBSOA | Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C |
| Diode Option | Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) |
| 실장 유형 | Through Hole |
| 패키지 | TO-247AD (3-lead) |
| RoHS 상태 | ROHS3 Compliant |
| Operating Mode | N-Channel IGBT |
IXDH20N120 핀 구성
| 핀 1 | Gate (G) — MOS gate input; drive with +15 V relative to emitter |
| 핀 2 | Collector (C) — Main current terminal; the metal tab is electrically common to the collector |
| 핀 3 | Emitter (E) — MOS source return and diode anode reference |
Forward Bias 안전 동작 영역 (FBSOA)
일반적인 애플리케이션
IXDH20N120 적합 용도: 7 애플리케이션s: AC Motor Speed Control / VFD Inverter, DC Servo and Robot Drives, DC Chopper / Braking Resistor Switch, Uninterruptible Power Supply (UPS), Welding Inverter, Solar Inverter / PV String Combiner, Induction Heating Tank Circuit.
AC Motor Speed Control / VFD Inverter
The IXDH20N120's 1200 V VCES and 38 A continuous IC25 make it well matched to three-phase 480 V / 600 V variable-frequency drives (VFDs) where the DC bus reaches 850 V. Its square RBSOA and 10 us short-circuit rating allow designers to size desaturation-detection trip times around the device's worst-case 850 VDC / 38 A locus without requiring aggressive derating. Placed on the inverter leg with a +15 V gate driver and 10 ohm gate resistor, the IXDH20N120 holds conduction loss low while the TO-247AD tab bolts directly to a forced-air heatsink. The optional D1 variant integrates the freewheeling diode so each phase leg needs only one part, simplifying layout and reducing loop inductance.
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DC Servo and Robot Drives
The IXDH20N120's positive temperature coefficient on VCE(sat) and rugged RBSOA suit the high di/dt loops of four-quadrant DC servo amplifiers driving robotic-arm joints. Square RBSOA at 30 uH inductive load with 82 W clamped means the IGBT absorbs regen energy from rapid deceleration without latch-up. The 1200 V VCES gives margin above the rectified 480 V bus, while the 38 A continuous rating covers 50-100 V bus servos up to about 5 kW per quadrant. For 4-quadrant H-bridge layouts, designers often use two IXDH20N120 plus two IXDH20N120D1 legs, exploiting identical TO-247AD pinouts and matched thermal loops.
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DC Chopper / Braking Resistor Switch
In pulse-mode DC chopper and dynamic-braking circuits, the IXDH20N120 switches hundreds of amps at low duty cycle while absorbing regen energy into a braking resistor. The 200 W PC rating and square RBSOA give a wide operating window for fast bipolar DC-bus transients, and the 1200 V VCES tolerates overvoltage from brake-energy spikes. Designers often run two IXDH20N120 in parallel because the positive VCE(sat) temperature coefficient forces shared current without added ballast resistors. The TO-247AD allows convenient chassis-mount heatsinking near the brake resistor.
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Uninterruptible Power Supply (UPS)
Online double-conversion UPS topologies place the IXDH20N120 in the inverter and PFC stages where 1200 V VCES handles the 800 V industrial DC bus and 38 A IC25 covers 5-15 kW units. The square RBSOA means robust handling of crowbar and load-step faults at full current, which is critical to UPS reliability. Designers typically drive the IGBT from a logic-level opto gate driver with 18 V Vge to minimize VCE(sat) and switch loss at 20 kHz. The TO-247AD footprint supports conservative 2 oz copper thermal layout and clears creepage for industrial cabinets.
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Welding Inverter
Welding inverters demand hundreds of amps of peak secondary current at 20-100 kHz switching, which the IXDH20N120 can deliver when paralleled 2-4 devices per switch position. Its 1200 V VCES permits the rectified 480 V industrial line input without clamping derating, and the 10 us short-circuit rating is essential during arc strikes when the load suddenly looks like a low-impedance short. The TO-247AD outline mounts directly to a high-CFM heatsink next to the welding transformer. The D1 suffix is preferred in single-device-per-leg designs because the integrated FRED recovers quickly to handle arc-extinguishing transients.
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Solar Inverter / PV String Combiner
Solar inverters requiring up to 1000 VDC bus (for 1500 VDC max safety rating) place the IXDH20N120 in the boost or full-bridge stage. Its 1200 V VCES gives 200 V margin above 1000 VDC max string voltage, and its square RBSOA tolerates load transients when PV input impedance changes rapidly. With typical 16-25 kHz operation, designers pair the IGBT with SiC anti-parallel diodes for higher-frequency use or with the integrated D1 variant for compact designs. Its 38 A continuous current suits 10-15 kW string inverters at residential and small-commercial scale.
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Induction Heating Tank Circuit
Resonant tank-circuit induction heating operates the IXDH20N120 near its maximum VCES in tens-of-kHz hard-switched or quasi-resonant mode, where square RBSOA is essential to absorb tank-energy oscillations. The IXYS NPT die balances conduction loss at 38 A steady-state with switching loss at 30-50 kHz; designers often derate the part's switching frequency to maintain 90 percent efficiency. The TO-247AD tab provides the low thermal-impedance path needed for water-cooled cold plates or large forced-air heatsinks in industrial-induction designs.
추천
추천 제품 요약
엔지니어링 참조 데이터: IXDH20N120 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IXDH20N120D1 | IXGH20N120A | IXDH30N120 | FGA20N120FTD | IRG4PH50UD2-E |
|---|---|---|---|---|---|---|
| Package | TO-247AD | TO-247AD - same | TO-247AD - same | TO-247AD - same | TO-247AD - same | TO-247AD - same |
| Brand | IXYS / Littelfuse | IXYS / Littelfuse | IXYS / Littelfuse | IXYS / Littelfuse | onsemi | Infineon |
| VCES (V) | 1200 | 1200 | 1200 | 1200 | 1200 | 1200 |
| IC25 continuous (A) | 38 | 38 | 40 | 48 | 20 | 24 (IC110) |
| Power Dissipation (W) | 200 | 200 | 200 | 250 | 160 | 200 |
| Integrated Diode | No (D1 suffix optional) | Yes (FRED) | No | No | Yes (FRED) | Yes (co-pack) |
| VCE(sat) typ (V) | 2.4 | 2.4 | 2.2 | 2.5 | 2.0 | 2.5 |
| Q1 price (each) | $8.42 | $9.50 | $9.20 | $11.50 | $6.50 | $10.00 |
주요 차별점
- Same-brand IXYS NPT family alignment with optional integrated FRED diode (vs FGA20N120FTD)
- Higher 38 A continuous current at the same 1200 V class rating (vs IRG4PH50UD2-E)
- Sibling within IXYS family available at higher current for parallel upgrade (vs IXDH30N120)
설계 노트
At VCES = 1200 V block voltage, the IXDH20N120 dissipates VCE(sat) * IC conduction loss plus switching loss; at 38 A with VCE(sat) = 2.4 V, conduction alone is 91 W. Estimated: TC rise needs a thermal pad with thetaJC under 0.5 C/W plus heatsink thetaSA under 0.25 C/W to keep TJ under 125 C at 25 C ambient. Mount the TO-247AD tab with 6 in-lb torque to minimize contact resistance.
Keep the commutation loop (collector-emitter of one switch vs the opposing switch) under 10 nH to limit voltage overshoot. Use kelvin emitter connection: drive the gate between pin 3 (emitter) and a local ground reference, never the power-emitter track. Recommended: place a 10 ohm gate resistor close to the gate pin and a 100 ohm pull-down to emitter for negative bias to suppress Miller-induced turn-on at high dV/dt.
Do not exceed VGE = +/- 20 V continuous; design the gate driver with UVLO of 12 V and +/- 18 V supply rails to give margin. Avoid paralleling without thermal balancing: rely on the positive VCE(sat) temperature coefficient, but measure each device's junction temperature once before relying on stable sharing. Short-circuit detection should trip within 6 us (less than the 10 us rating) to avoid latch-up.
For switching frequency above 25 kHz with continuous 38 A conduction, switching loss dominates; consider the IXGH20N120A (faster NPT die) or a Trench-FS IGBT. For inductive switching at 30 uH / 82 W clamped energy (per the IXYS datasheet RBSOA specification), verify the gate-driver desaturation turn-off speed and keep the clamp-diode loop inductance low enough that VCE transient stays below 1300 V.
규정 준수 정보
ROHS3 compliant per distributor listing. Halogen-free not explicitly stated in the IXYS datasheet; verified as compliant where listed. IXYS is now part of Littelfuse; compliance status inherited from current Littelfuse/IXYS product page.
