IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse
부품 번호: IXDH20N120D1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $5.42 | $5.42 |
| 10 | $4.85 | $48.50 |
| 100 | $4.21 | $421.00 |
| 500 | $3.74 | $1,870.00 |
| 1,000 | $3.3 | $3,300.00 |
IXDH20N120D1 개요
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges a MOSFET input stage with a bipolar output stage. NPT technology uses a thick, uniformly doped drift region to deliver a square RBSOA and lower switching losses than earlier PT (punch-through) generations. Within the broader taxonomy, the IGBT belongs to power discrete semiconductors, sitting alongside power MOSFETs, thyristors, and TRIACs as a switching element in converters, inverters, and motor drives where voltage ratings of 600 V to 6500 V are required.
Key features of the IXDH20N120D1 include a square RBSOA at 1200 V / 38 A for snubberless hard switching, low saturation voltage, a short-circuit withstand capability (tSC), and a co-packaged fast-recovery diode that eliminates the need for an external anti-parallel diode in half-bridge configurations. The TO-247AD package provides a robust mechanical form factor for through-hole mounting on a heatsink.
The device uses a planar NPT cell structure with an epitaxial drift layer that balances conduction losses against switching losses. Typical turn-off energy in the low Eoff range combined with low tail current makes this IGBT suitable for hard-switching converters running at frequencies up to roughly 20 kHz. The co-packaged FRED diode features low reverse recovery charge (Qrr) which reduces turn-on losses on the complementary IGBT in half-bridge and full-bridge topologies.
Typical applications include industrial motor drives (low-voltage AC inverter stages up to 480 V class), UPS systems, solar inverters, induction heating, welding power supplies, and switched-mode power supplies requiring 1200 V blocking capability. The integrated diode also makes the part attractive for half-bridge and full-bridge topologies where discrete anti-parallel diodes would otherwise be required.
When designing with this part, ensure the gate drive voltage is 15 V +/-10% with proper gate resistance selection (typically 10 to 47 ohm) to balance EMI, switching loss, and short-circuit immunity. The TO-247AD tab must be firmly heatsinked because at full load the device can dissipate over 100 W; junction temperature must be kept below 150 C to maintain long-term reliability.
This page synthesizes distributor pricing, drop-in TO-247AD alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: IXDH20N120D1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IXDH20N120D1 (동일 폼 팩터 및 풋프린트) — 차이점: RBSOA, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IXDH30N120D1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDH20N120
✅ 드롭인✓ 재고 있음
$5.2 / 개
데이터시트 보기 →IXDA20N120AS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDN55N120D1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IKW15N120H3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRG4PC50UD
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDH20N120D1 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Technology | NPT (Non-Punch Through) IGBT with co-packaged FRED |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Gate-Emitter Voltage (VGES) | +/- 20 V |
| Continuous Collector Current IC25 | 38 A (at TC = 25 C) |
| Maximum Power Dissipation (PC) | 200 W |
| 컬렉터-이미터 포화 전압 (Vce(sat)) | 3.0 V typ at IC = 20 A |
| RBSOA | Square RBSOA at 1200 V / 38 A (snubberless hard switching) |
| Operating Junction Temperature (TJ) | -55 C to +150 C |
| Storage Temperature (Tstg) | -55 C to +150 C |
| Package Type | TO-247AD (3-pin with tab) |
| 실장 유형 | Through Hole |
| Integrated Diode | Yes - co-packaged FRED (D1 variant) |
| RoHS 상태 | Compliant |
IXDH20N120D1 핀 구성
| 핀 1 | Gate — Gate input - driven by gate driver IC with 15V ON / -5V to -15V OFF |
| 핀 2 | Collector — Collector (also internally bonded to metal tab) - high-voltage switching terminal |
| 핀 3 | Emitter — Emitter - low-side reference for gate drive and current sensing |
Reverse Bias 안전 동작 영역 (RBSOA)
일반적인 애플리케이션
IXDH20N120D1 적합 용도: 6 애플리케이션s: Industrial Motor Drives (480V AC Inverters), Uninterruptible Power Supplies (UPS), Solar / Photovoltaic Inverters, Induction Heating and Welding Power, Switched-Mode Power Supplies (SMPS) at 1200V Class, Electric Vehicle Charging Stations.
Industrial Motor Drives (480V AC Inverters)
The IXDH20N120D1's 1200 V VCES rating comfortably covers 480 V AC rectifier bus voltages (approximately 680 V DC link), while its 38 A continuous collector current supports three-phase motor drives up to roughly 15 kW. The square RBSOA at 1200 V / 38 A enables snubberless hard-switching operation in the inverter stage, reducing BOM cost and complexity. Placed in the half-bridge leg with its co-packaged FRED diode providing the freewheeling path, this IGBT delivers reliable switching up to 15 kHz to 20 kHz. Compared to 1200 V MOSFETs at the same current rating, the IXDH20N120D1 offers lower conduction losses at the cost of higher switching loss, making it ideal for variable-frequency drives (VFDs) where switching frequency is moderate.
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Uninterruptible Power Supplies (UPS)
In online UPS topologies, the IXDH20N120D1 serves as the main switching element in the inverter stage that converts battery DC (or rectified AC bus) into clean 50/60 Hz AC output. Its 1200 V blocking allows direct operation from 700 V DC battery strings without derating, while the co-packaged FRED diode eliminates the need for separate freewheeling diodes in the full-bridge output stage. The 38 A rating supports UPS units up to approximately 8 kVA single-leg, with paralleled units for higher power. Compared to optocoupler-isolated gate drivers, the device's +/-20 V VGES rating gives designers flexibility to choose standard 15 V gate drive ICs. The square RBSOA also protects against the inductive transients that occur during battery load steps.
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Solar / Photovoltaic Inverters
String solar inverters operating at 1000 V DC open-circuit voltage require IGBTs with VCES of at least 1200 V to handle transients and overshoot. The IXDH20N120D1's 1200 V rating and 38 A continuous current support residential and small-commercial single-phase string inverters up to roughly 10 kW. The co-packaged FRED diode simplifies the H4/H5 inverter topology used in transformerless designs, while the device's hard-switching ruggedness (square RBSOA at 1200 V / 38 A) handles the switching stresses of MPPT-tracked boost converter operation. Compared to using two discrete IGBT + diode parts, the D1 variant reduces junction-to-junction thermal coupling and improves long-term reliability in outdoor enclosure temperature swings.
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Induction Heating and Welding Power
Resonant inverter topologies for induction heating and welding operate at medium frequencies (10 kHz to 100 kHz) with high circulating currents. The IXDH20N120D1's 1200 V rating supports the resonant capacitor voltages typical of these designs, while its 38 A continuous rating covers single-ended and half-bridge converters up to roughly 20 kW. The square RBSOA is essential in welding, where the inverter must survive the short-circuit condition of an arc strike without destructive failure. The co-packaged FRED diode with low Qrr minimizes commutation losses in resonant zero-voltage switching (ZVS) topologies. Compared to similarly rated MOSFETs, the IXDH20N120D1's lower conduction loss at high DC current makes it more efficient in continuous-duty welding applications.
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Switched-Mode Power Supplies (SMPS) at 1200V Class
High-voltage SMPS designs for X-ray equipment, laser drivers, and industrial process power require active switches rated well above 1000 V. The IXDH20N120D1 fits as the main switch in a single-ended or half-bridge flyback/forward converter topology handling up to 38 A peak. Its 1200 V blocking allows direct operation from rectified 600 V AC mains with adequate margin for voltage spikes, while the co-packaged FRED diode provides the necessary freewheeling path in non-isolated buck-derived topologies. Compared to a discrete MOSFET + diode approach, the integrated D1 diode reduces PCB area and assembly cost. The device's short-circuit withstand capability (tSC) protects against the worst-case transformer-saturation events common in SMPS fault conditions.
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Electric Vehicle Charging Stations
DC fast-charging stations for electric vehicles require high-power converters to interface the AC grid with the vehicle's battery (typically 400 V or 800 V). The IXDH20N120D1 serves in the PFC (Power Factor Correction) boost stage or the DC-DC converter stage of charging modules up to approximately 15 kW per IGBT position. Its 1200 V rating covers 800 V battery systems with adequate safety margin, while its 38 A continuous collector current supports modular charging units. The square RBSOA handles the hard-switching transients in totem-pole PFC topologies, increasingly important in modern EV charger designs. Compared to silicon carbide (SiC) MOSFETs at this voltage class, the IXDH20N120D1 offers significantly lower cost at the expense of higher switching loss - making it attractive for cost-sensitive Level 2 AC charging stations rather than DC fast chargers where SiC dominates.
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추천 제품 요약
엔지니어링 참조 데이터: IXDH20N120D1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IXDH30N120D1 | IXDH20N120 | IXDA20N120AS | IXDN55N120D1 | IKW15N120H3 | IRG4PC50UD |
|---|---|---|---|---|---|---|---|
| Package | TO-247AD (3-pin) | TO-247AD - same | TO-247AD - same | TO-247AD - same | TO-247AD - same | TO-247AD - same | TO-247AD - same |
| Brand | Littelfuse (IXYS legacy) | Littelfuse - same | Littelfuse - same | Littelfuse - same | Littelfuse - same | Infineon | Infineon |
| VCES (Collector-Emitter Voltage) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Continuous Collector Current IC25 | 38 A | 50 A | 38 A | 38 A | 75 A | 15 A | 55 A |
| VCE(sat) typical | 3.0 V at IC=20A | 2.7 V at IC=30A | 3.0 V at IC=20A | 2.5 V at IC=20A | 2.4 V at IC=55A | 2.0 V at IC=15A | 2.3 V at IC=30A |
| Co-packaged Diode | Yes (FRED) | Yes (FRED) | No (non-D1) | Yes (FRED) | Yes (FRED) | No | Yes (FRED) |
| Technology | NPT (Non-Punch Through) | NPT | NPT | NPT-Advanced (AS series) | NPT | NPT T1 (Infineon) | NPT (Gen 4) |
| RBSOA | Square at 1200V / 38A | Square at 1200V / 50A | Square at 1200V / 38A | Square at 1200V / 38A | Square at 1200V / 75A | Square at 1200V / 15A | Square at 1200V / 55A |
주요 차별점
- Co-packaged FRED diode eliminates external freewheeling diode (vs IXDH20N120 (non-D1 variant))
- Square RBSOA at full 1200V/38A rating for snubberless hard switching (vs IKW15N120H3)
- Higher continuous current vs Infineon IKW15N120H3 in same package (vs IKW15N120H3)
- Industry-standard TO-247AD pinout for drop-in migration (vs IRG4PC50UD)
설계 노트
Estimated: at IC=20A, VCE(sat)=3.0V, the conduction loss is ~60W. Plus switching loss (~10W at 15kHz hard switching), total dissipation approaches 70W. With TO-247AD RthJC of approximately 0.62 C/W, junction temperature rises 43 C above case. For 25 C ambient and 150 C junction limit, the heatsink must keep case below 107 C, typically requiring a 0.5 C/W or better heatsink with active airflow. Without thermal compound or an insulating pad (which adds 0.1-0.3 C/W), the thermal budget tightens significantly.
Through-hole TO-247AD mounting requires careful attention to lead bending stress and through-hole plating. Use a TO-247 socket or hand-solder the leads after mechanical attachment to the heatsink to prevent thermal cycling stress on the solder joints. The mounting tab must use a proper thermal interface material (TIM) - thermal compound at 0.05 C/W or a silicone pad at 0.2-0.4 C/W. Insulating the tab with a mica or Kapton pad adds 0.5-1.0 C/W which may require a larger heatsink. Apply mounting torque of 0.6-0.8 N*m to ensure good thermal contact without cracking the package.
Critical pitfalls: (1) Driving the gate below +12 V increases VCE(sat) dramatically - always use +15 V gate drive. (2) Forgetting negative gate-off voltage (-5V to -15V) can cause cross-conduction in half-bridge legs due to Miller-induced turn-on. (3) Exceeding tSC (short-circuit withstand time) during transformer saturation events - gate driver DESAT protection is mandatory for SMPS applications. (4) Operating in the linear region during turn-off (overcurrent but below desat threshold) for extended periods destroys the device - always use proper short-circuit detection with sub-10us response time.
Gate-drive loop inductance must be minimized - keep the gate-emitter return trace or wire as short as physically possible (under 5 cm total loop length). Use a gate resistor of 10 to 47 ohm at the gate driver output, with a separate small resistor (10 ohm) at the gate pin to dampen ringing. Place a 10 nF to 100 nF ceramic bypass capacitor directly between gate and emitter pins on the device to shunt Miller current. For multi-IGBT parallel operation, add individual gate resistors per device to prevent oscillation - never share a single gate resistor across paralleled IGBTs.
Snubber design is critical for hard-switching applications above 10 kHz. An RC snubber across collector-emitter (typically 10 ohm + 0.1 uF for 1200 V / 38 A class) limits dV/dt-induced voltage overshoot and reduces EMI. For snubberless operation, rely on the square RBSOA of the IXDH20N120D1 which is rated for hard switching at 1200 V / 38 A. Avoid sharing snubber circuits between paralleled devices - each IGBT should have its own dedicated RC snubber. Keep snubber leads under 2 cm to prevent parasitic inductance.
규정 준수 정보
ROHS compliant per IXYS/Littelfuse product declaration. Not AEC-Q100 qualified - use automotive-grade equivalents for vehicle applications. Part is lead-free with matte-tin plating on leads. Conflict minerals declaration is current per Littelfuse corporate policy.
