MW7IC2220GNR1 - 2W W-CDMA RF LDMOS PA 2.11-2.17 GHz | NXP
부품 번호: MW7IC2220GNR1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $35.2 | $352.00 |
| 100 | $31.75 | $3,175.00 |
| 500 | $28.4 | $14,200.00 |
| 1,000 | $25.1 | $25,100.00 |
MW7IC2220GNR1 개요
An RF power amplifier is a semiconductor device that boosts a low-level modulated RF signal to a high transmission power level while preserving spectral mask compliance and adjacent-channel leakage ratio. Within the cellular base-station signal chain the PA sits immediately before the duplexer and antenna, and it must simultaneously deliver high efficiency, adequate linearity for W-CDMA/LTE modulation, and robustness under VSWR mismatch. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) has historically dominated macro-cell transmitter outputs because it combines high RF power density, low cost per watt, and easier broadband matching than GaAs alternatives.
Key features of the MW7IC2220GNR1 include 2 W average W-CDMA output at P1dB-class compression, a wide operating voltage range from 24 V to 32 V, on-chip 50 ohm matching for both stages, integrated ESD protection on the RF pins, and a thermally enhanced TO-270 plastic overmold package with a gull-wing lead form suitable for high-volume reflow and large copper ground planes. The device is characterized for single-carrier W-CDMA with 7.5 dB PAR and supports TD-SCDMA, WiMAX, and 4G LTE signal formats within its 2000-2200 MHz usable bandwidth.
The MW7IC2220GNR1 uses a two-stage LDMOS architecture with on-chip input matching, inter-stage matching, and output matching. Quiescent bias is set externally with a gate reference network; quiescent currents of IDQ1 = 80 mA and IDQ2 = 300 mA at 28 V are recommended for W-CDMA linearity. ACPR is measured in 3.84 MHz channel bandwidth at +/-5 MHz offset per the NXP datasheet.
Typical applications include W-CDMA/LTE driver stages in macro base stations, 2.1 GHz repeater and small-cell transmitters, TD-SCDMA infrastructure, and general-purpose 2000-2200 MHz linear amplification where 2 W average is required. The integrated matching reduces external component count and simplifies PCB layout.
When designing with this device, ensure the heatsink and PCB copper area keep the junction temperature below 200 C at the worst-case Pdiss, and follow the NXP reference design bias network to maintain ACPR margin across temperature. Decouple VDD with low-ESR ceramic plus bulk electrolytic capacitors placed within 5 mm of the leads.
드롭인 대체품: MW7IC2220GNR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MW7IC2220GNR1 (동일 폼 팩터 및 풋프린트) — 차이점: Mounting Type, Technology, ACPR Measurement, Frequency Range, Input/Output Matching.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MW7IC2220NR1
✅ 드롭인✓ 재고 있음
$18.75 / 개
데이터시트 보기 →MW7IC2220NBR1
✅ 드롭인✓ 재고 있음
$21.5 / 개
데이터시트 보기 →MW7IC2220GNR1 최대 정격 & 전기적 특성
| Technology | RF LDMOS, two-stage integrated |
| Frequency Range (Usable) | 2000 MHz to 2200 MHz |
| Target Band | W-CDMA 2110-2170 MHz |
| Output Power (Avg, W-CDMA) | 2 W Avg. |
| Operating Voltage (VDD) | 28 V nominal (24 V to 32 V range) |
| Gain (Typ, 2.17 GHz) | 31 dB |
| Quiescent Current Stage 1 (IDQ1) | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | 300 mA |
| Test Signal | Single-Carrier W-CDMA, PAR = 7.5 dB @ 0.01% CCDF |
| ACPR Measurement | 3.84 MHz channel, +/-5 MHz offset |
| 패키지 | TO-270 WBL-16 Gull-Wing (16-pin plastic overmold) |
| 실장 유형 | Surface Mount (Gull-Wing leads) |
| Input/Output Matching | On-chip 50 ohm matching |
| Lead-Free / RoHS | RoHS compliant per NXP product page |
MW7IC2220GNR1 핀 구성
| 핀 1 | RF_IN — RF input (50 ohm, on-chip matched) |
| 핀 2 | GND — Ground / flange thermal pad (also serves as primary thermal dissipation path) |
| 핀 3 | VGG1 — Stage 1 gate bias reference |
| 핀 4 | VDD1 — Stage 1 drain supply (28 V nominal) |
| 핀 5 | GND — Ground |
| 핀 6 | GND — Ground |
| 핀 7 | VGG2 — Stage 2 gate bias reference |
| 핀 8 | VDD2 — Stage 2 drain supply (28 V nominal) |
| 핀 9 | GND — Ground |
| 핀 10 | GND — Ground |
| 핀 11 | NC — Not connected (per datasheet) |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | GND — Ground |
| 핀 14 | GND — Ground |
| 핀 15 | GND — Ground |
| 핀 16 | RF_OUT — RF output (50 ohm, on-chip matched) |
안전 동작 영역 (DC, derived from VDD = 24-32 V and IDQ ratings)
일반적인 애플리케이션
MW7IC2220GNR1 적합 용도: 6 애플리케이션s: W-CDMA Macro Base-Station Driver, LTE Small-Cell Transmitter, TD-SCDMA Infrastructure Amplification, WiMAX 2.3-2.4 GHz Linear Amplifier, 2.1 GHz RF Repeater / Booster, Test & Measurement Linear PA Driver.
W-CDMA Macro Base-Station Driver
The MW7IC2220GNR1's 2 W average output at 2110-2170 MHz and 31 dB gain make it a strong fit as a final-stage PA in W-CDMA macro base-station transmitter chains where ACPR linearity and on-chip matching reduce design cycle time. The 28 V nominal VDD delivers high efficiency for the 2 W average target, and the integrated 50 ohm input and inter-stage matching eliminate external LC networks, simplifying PCB layout. Placed between the transceiver/upconverter and the duplexer with 28 V switching supply and TVS-protected VDD rails, it provides 7.5 dB PAR headroom while keeping external BOM count low.
추천
LTE Small-Cell Transmitter
For 2.1 GHz LTE small-cell transmitters needing 2 W average linear output, the MW7IC2220GNR1's broadband 2000-2200 MHz on-chip matching covers LTE Band 1 / Band 10 / AWS allocations with adequate ACPR margin. Its two-stage LDMOS architecture preserves linearity for LTE signals with PAR up to 7-8 dB, and the 31 dB gain means the part can be driven directly from a -1 to 0 dBm transceiver output. Powered from a 28 V regulated switching rail with proper sequencing, this part enables compact small-cell PA modules that meet 3GPP spectral emission masks.
추천
TD-SCDMA Infrastructure Amplification
The MW7IC2220GNR1's 2010-2025 MHz TD-SCDMA coverage is fully supported by its 2000-2200 MHz usable bandwidth, and the 2 W average output matches typical TD-SCDMA pico-cell output stages. The part's wide 24-32 V VDD tolerance accommodates the loosely regulated 28 V bus common in Chinese carrier infrastructure, simplifying power supply design. The integrated 50 ohm matching reduces external component count, enabling compact TD-SCDMA pico-cell PA assemblies that meet transmit mask and EVM requirements while maintaining low BOM cost.
추천
WiMAX 2.3-2.4 GHz Linear Amplifier
WiMAX systems operating near 2300-2400 MHz can use the MW7IC2220GNR1 with a slight input/output matching trim, since the device remains usable to 2200 MHz and provides ample gain for driver-stage roles. For full-band 2.3-2.4 GHz coverage, the part's broadband on-chip matching gives design margin that simplifies WiMAX PA reference designs compared to discrete LDMOS. The two-stage 31 dB gain allows it to be driven from a -1 to 0 dBm WiMAX modem source while delivering 2 W average output for the WiMAX spectral mask.
추천
2.1 GHz RF Repeater / Booster
Distributed antenna systems and RF repeaters operating in the 2110-2170 MHz band benefit from the MW7IC2220GNR1's 2 W output, 31 dB gain, and on-chip 50 ohm matching. The integrated matching reduces repeater PCB complexity to a power and thermal problem, accelerating time-to-market for in-building wireless coverage hardware. With 28 V supply and proper heatsinking, the part delivers continuous-duty 2 W average across the W-CDMA band for both analog and digital repeater architectures.
추천
Test & Measurement Linear PA Driver
Engineers building W-CDMA / LTE test sets, signal generators, or device-over-the-air test chambers can use the MW7IC2220GNR1 as a 2 W linear power driver at 2.1 GHz. Its 31 dB gain reduces the upstream drive requirement to a few mW from a bench signal source, and the on-chip matching makes it straightforward to integrate into a 50 ohm test fixture. The part's documented ACPR performance under single-carrier W-CDMA at 7.5 dB PAR gives designers a known-good baseline for repeatable measurement results.
추천
추천 제품 요약
엔지니어링 참조 데이터: MW7IC2220GNR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MW7IC2220NR1 | MW7IC2220NBR1 |
|---|---|---|---|
| Package | TO-270 WBL-16 Gull-Wing | TO-270 WBL-16 (standard lead form) - same footprint family | TO-270 WBL-16 (B lead-form variant) - same footprint family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 2110-2170 MHz (usable 2000-2200 MHz) | 2110-2170 MHz (usable 2000-2200 MHz) - identical | 2110-2170 MHz (usable 2000-2200 MHz) - identical |
| Output Power (Avg W-CDMA) | 2 W Avg. | 2 W Avg. - identical | 2 W Avg. - identical |
| Gain (Typ) | 31 dB | 31 dB - identical | 31 dB - identical |
| Operating Voltage (VDD) | 28 V nominal (24-32 V range) | 28 V nominal (24-32 V range) - identical | 28 V nominal (24-32 V range) - identical |
| Lead Form | Gull-Wing (G suffix) | Standard (N suffix) | Variant B lead form |
| Silicon Die | Two-stage LDMOS, integrated matching | Same die per NXP datasheet | Same die per NXP datasheet |
| RoHS Compliance | Yes (NXP product page) | Yes (NXP product page) | Yes (NXP product page) |
주요 차별점
- Pin-compatible same-die drop-in across N/G/B suffix family (vs MW7IC2220NR1)
- On-chip 50 ohm matching eliminates external matching networks (vs Discrete two-stage LDMOS designs)
- Wide 24-32 V VDD tolerance accommodates loosely regulated base-station buses (vs 5 V or 12 V GaAs PAs)
설계 노트
Estimated: at 2 W average W-CDMA output and VDD = 28 V, typical PAE is 15-20%, so the MW7IC2220GNR1 dissipates roughly 8-12 W as heat. The TO-270 WBL-16 package must be soldered to a PCB copper ground plane that also serves as the heatsink; a minimum 20-30 cm^2 of 2 oz copper is recommended to keep junction temperature below 150 C. Use thermal vias under the package flange to spread heat into inner copper layers and reduce theta_JA. Always verify with a thermocouple on the package flange during worst-case ACPR tuning.
Place RF input and output microstrip traces on a low-loss substrate (Rogers RO4003C or FR4 with controlled Dk) and keep them 50 ohm with respect to the substrate stackup. Decouple VDD1 and VDD2 with 100 nF and 10 uF ceramic capacitors placed within 5 mm of each lead, plus a bulk electrolytic on the supply side. Keep gate bias traces short and shielded from RF traces to prevent parasitic feedback. Follow the NXP reference design layout for the evaluation board to avoid oscillation.
Do not exceed 32 V on VDD; the LDMOS drain junctions will be permanently damaged above the absolute maximum rating. Add TVS diodes and supply-side snubbers to absorb transients from the switching converter. Bias sequencing (gate before drain) is essential to prevent parametric drift - use the NXP recommended gate reference network. Finally, ensure RF input drive is removed before VDD ramp-down to avoid reverse-bias stress on the gate oxide.
The on-chip matching assumes a specific source/load impedance presented by the PCB microstrip and connector transitions. Avoid sharp bends and use curved microstrip with chamfered right angles; place the RF connectors (SMA) within 5 mm of the package leads to minimize parasitic inductance. Stitch the ground plane around the package flange with a dense via fence (200 mil pitch or less) to suppress common-mode resonances. Do not route digital or switching-supply traces under the RF path.
규정 준수 정보
RoHS and lead-free per NXP product page. AEC-Q100 not applicable for base-station RF power amplifiers. REACH compliance inferred from NXP corporate statements; not explicitly listed in part-specific parametric data.
