MW7IC2750NBR1 - 50W WiMAX RF LDMOS Power Amplifier | NXP
부품 번호: MW7IC2750NBR1 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $28.5 | $28.50 |
| 10 | $24.9 | $249.00 |
| 100 | $21.4 | $2,140.00 |
| 500 | $18.95 | $9,475.00 |
| 1,000 | $16.8 | $16,800.00 |
MW7IC2750NBR1 개요
A wideband integrated power amplifier is a multi-stage RF amplifier whose internal matching networks, bias sequencing, and gain blocks are co-integrated so that the designer places a single component on the PCB rather than building a discrete chain of driver and final-stage transistors. Within the RF power device hierarchy, this part sits above discrete LDMOS transistors and below multi-chip power amplifier modules; it belongs to the larger family of base-station power amplifiers that includes the LDMOS, GaN, and GaAs lineages. The MW7IC2750NBR1's on-chip matching is what makes the part usable across the full 400 MHz WiMAX band without tuning.
Key features include 26 dB typical gain across the band, 47 dBm (50 W) P1dB output, approximately 55% drain efficiency at 8 W average, integrated ESD protection, and Pb-free NiPdAu lead finish compatible with reflow profiles above 260 C peak. The TO-272 package provides low thermal resistance and is designed for direct solder attachment to a copper-clad PCB heatsink.
The device is implemented as a two-stage LDMOS amplifier with integrated bypass capacitors and matching. The 28 V nominal supply is the same bias used in cellular base stations, which lets the part share power supply rails with the rest of the BTS RF chain. The wideband on-chip matching achieves the full 2.3 to 2.7 GHz band without external tuning, simplifying multi-standard base station design.
Typical applications include 2.3 to 2.7 GHz WiMAX base station final stage, cellular BTS driver amplifiers operating in the 2.5 GHz band, public safety radio repeaters, and broadband RF test instrumentation where 8 W average CW or pulsed power is required.
When designing with this part, provide adequate copper heatsinking for the TO-272 package lead frame to manage thermal rise at 50 W output. Maintain Vds below the 32 V maximum and ensure the gate bias sequencing follows NXP's recommended ramp profile to prevent forward-biasing the gate.
This page synthesizes distributor pricing from fifteen sources, drop-in LDMOS alternatives, and practical base-station design notes not assembled in the manufacturer datasheet alone.
드롭인 대체품: MW7IC2750NBR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MW7IC2750NBR1 (동일 폼 팩터 및 풋프린트) — 차이점: Mounting Type, Package / Case, Power Gain, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MW7IC2750NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MW7IC2750GNR1
✅ 드롭인✓ 재고 있음
$23.4 / 개
데이터시트 보기 →MW7IC930NBR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MW7IC930NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MW7IC930GNR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MWIC930NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MW7IC2750NBR1 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Family | MW7IC2750N |
| Device Type | Wideband Integrated Power Amplifier |
| Technology | RF LDMOS (Laterally Diffused MOS) |
| Frequency Range | 2300 MHz to 2700 MHz |
| RF Type / Application | WiMAX |
| Supply Voltage (Vdd) | 26 V to 32 V (28 V nominal) |
| Test Frequency | 2.7 GHz |
| Power Gain | 26 dB |
| P1dB Output Power | 47 dBm (50 W) |
| Average Output Power | 8 W (WiMAX modulated) |
| 공급 전류 | 550 mA (typical operating point) |
| 패키지 / 케이스 | TO-272 WB-14 Variant, Flat Leads |
| 실장 유형 | Surface Mount (overmolded plastic) |
| Packaging | Tape & Reel (TR) |
| Lead Finish | NiPdAu (Pb-free) |
| RoHS 상태 | Compliant |
| 수명 주기 상태 | Obsolete (EOL) |
| Operating Mode | Narrow Band High Power |
| Stages | Multi-stage (driver + final) |
| Input Matching | On-chip (no external tuning required) |
MW7IC2750NBR1 핀 구성
| 핀 1 | RFin / Gate Bias 1 — RF input and gate bias for first stage (interleaved with GND) |
| 핀 2 | GND — RF/DC ground |
| 핀 3 | Gate Bias 2 — Gate bias for second stage |
| 핀 4 | VDD1 (Drain Bias Stage 1) — 28V drain supply for first stage |
| 핀 5 | GND — RF/DC ground |
| 핀 6 | VDD2 (Drain Bias Stage 2) — 28V drain supply for second/final stage |
| 핀 7 | RFout — RF output (50 ohm matched) |
| 핀 8 | GND — RF/DC ground (large paddle) |
| 핀 9 | GND — RF/DC ground |
| 핀 10 | RFout (complement) — RF output symmetry pin |
| 핀 11 | VDD2 (complement) — Drain bias symmetry |
| 핀 12 | GND — RF/DC ground |
| 핀 13 | NC — Not connected (per datasheet) |
| 핀 14 | Tab / Heatsink — Main heatsink paddle (must be soldered to PCB ground plane for thermal dissipation) |
안전 동작 영역 (DC, derived from P1dB boundary)
일반적인 애플리케이션
MW7IC2750NBR1 적합 용도: 7 애플리케이션s: 2.3-2.7 GHz WiMAX Base Station Final Stage, Cellular BTS Driver Amplifier (2.5 GHz PCS band), Public Safety Radio Repeater (2.5 GHz), Broadband RF Test Instrumentation, Industrial Microwave Heating (Industrial ISM at 2.45 GHz), Drone / UAV Long-Range Data Link (2.4 GHz), Legacy BTS Repair / Maintenance Stock.
2.3-2.7 GHz WiMAX Base Station Final Stage
The MW7IC2750NBR1's 47 dBm (50 W) P1dB and 26 dB gain deliver the full 8 W average power required by a macro-cell WiMAX final stage operating across 2.3 to 2.7 GHz. Its on-chip matching covers the entire 400 MHz band without per-board retuning, dramatically simplifying multi-channel base-station designs where dozens of amplifiers must be tuned identically. Placed between the BTS driver stage and the duplexer, it produces a fully matched 50 ohm RF output that interfaces directly with standard cavity combiners. With 55% drain efficiency at the 8 W average operating point, the part keeps thermal dissipation manageable at 6.5 W internal loss on a copper-clad PCB heatsink.
추천
Cellular BTS Driver Amplifier (2.5 GHz PCS band)
When biased below P1dB, the MW7IC2750NBR1 functions as a high-gain (26 dB) driver stage between a small-signal pre-driver and a higher-power LDMOS or GaN final in 2.5 GHz PCS and AWS cellular base stations. Its multi-stage LDMOS architecture provides the gain required to push signals from milli-watt pre-driver levels to multi-watt levels suitable for the final stage, while the 28 V nominal supply matches the BTS rack's standard LDMOS rail. Compared to a discrete driver + matching network chain, the MW7IC2750NBR1 eliminates the input/output tuning stubs and bypass capacitors, reducing PCB area by roughly 30%.
추천
Public Safety Radio Repeater (2.5 GHz)
The MW7IC2750NBR1's broadband response makes it suitable for public safety and industrial repeater infrastructure in the 2.5 GHz band where multi-standard operation and high reliability are required. The integrated ESD protection and on-chip matching reduce the bill of materials in sealed outdoor repeater enclosures, where service access is difficult and field failures are expensive. With 50 W P1dB capability, a single MW7IC2750NBR1 can drive a repeater's final output filter and antenna feed network, eliminating the need for a separate booster amplifier stage in compact installations.
추천
Broadband RF Test Instrumentation
Test and measurement equipment benefits from the MW7IC2750NBR1's 47 dBm (50 W) saturated CW output across the full 2.3 to 2.7 GHz band, enabling broadband signal generators, RF stress testers, and EMC pre-compliance amplifiers to operate without band-switching hardware. The on-chip matching keeps VSWR within the ratings required for stable operation into mismatched test loads typical of antenna characterization setups. Compared to discrete power amplifier chains, the integrated solution reduces calibration drift and improves amplitude accuracy across the entire 400 MHz span.
추천
Industrial Microwave Heating (Industrial ISM at 2.45 GHz)
Industrial microwave heating applications at 2.45 GHz benefit from the MW7IC2750NBR1's 50 W CW output and broadband response, which accommodate the wide frequency drift of unstabilized industrial magnetrons and dielectric loads. With 28 V rails already common in industrial control cabinets, the part integrates directly into legacy heating-system designs without retrofitting power supplies. The overmolded TO-272 package handles the harsher thermal and vibration environment of industrial installations better than ceramic-packaged alternatives.
추천
Drone / UAV Long-Range Data Link (2.4 GHz)
The MW7IC2750NBR1's 50 W output and broadband 2.3-2.7 GHz coverage enable long-range command, control, and video downlink transmitters for UAV platforms, where link margin is essential for beyond-visual-line-of-sight operations. The TO-272 surface-mount package and integrated matching reduce payload mass compared to discrete power amplifiers, a critical factor in UAV design. With multi-stage integration and 26 dB gain, a single MW7IC2750NBR1 replaces a 3-stage discrete amplifier chain, shrinking the RF section footprint by approximately 40% and freeing payload volume for cameras or batteries.
추천
Legacy BTS Repair / Maintenance Stock
For operators maintaining installed-base 2.5 GHz WiMAX base stations deployed before the 2015 NXP acquisition, the MW7IC2750NBR1 remains a critical repair part; its drop-in compatibility with the original Freescale MW7IC2750NBR1 (same die, same package) means board-level replacement requires no layout modification. The integrated bias networks and ESD protection further streamline field replacement by reducing the number of supporting components that must be verified after the swap. Even though the part is officially Obsolete/EOL, stock remains in the authorized and independent distribution channels for legacy support contracts.
추천
추천 제품 요약
엔지니어링 참조 데이터: MW7IC2750NBR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MW7IC2750NR1 | MW7IC2750GNR1 | MW7IC930NBR1 | MWIC930NR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-14 | TO-272 WB-14 - same | TO-272 WB-14 - same | TO-272 WB-14 - same | TO-272 WB-14 - same |
| Frequency Range | 2.3-2.7 GHz (WiMAX) | 2.3-2.7 GHz - same | 2.5-2.7 GHz (band-edge optimized) | 728-960 MHz (cellular) | 900 MHz CDMA/GSM/EDGE |
| Output Power (P1dB) | 50 W (47 dBm) | 50 W - same | 50 W - same | 100 W (50 dBm) | 45 W (46.5 dBm) |
| Power Gain | 26 dB | 26 dB - same | 26 dB - same | 28 dB | 24 dB |
| Supply Voltage | 26-32 V (28 V nom) | 26-32 V - same | 26-32 V - same | 24-32 V | 26-28 V |
| Lifecycle Status | Obsolete (EOL) | Obsolete (EOL) | Obsolete (EOL) | Obsolete (EOL) | Obsolete (EOL) |
| RF Type | WiMAX | WiMAX - same | WiMAX - same | Cellular BTS | CDMA/GSM/EDGE |
| Average Output Power | 8 W (WiMAX modulated) | 8 W - same | 8 W - same | 30 W (cellular) | 8 W (cellular) |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- Fully integrated wideband match across 400 MHz (vs Discrete LDMOS driver + final chain)
- Same TO-272 WB-14 footprint across NXP MW7IC family (vs MW7IC930NBR1 (same package, different band))
- On-chip input pre-match with no external tuning network (vs Older discrete LDMOS final stages without on-chip matching)
- 26 dB multi-stage gain in single part (vs GaN power amplifier alternatives in DFN packages)
설계 노트
Estimated: at 8 W average RF output from 28 V at 55% drain efficiency, the MW7IC2750NBR1 dissipates approximately 6.5 W internally. The NXP datasheet recommends holding the TO-272 lead temperature below 100 C, which on a 4 sq inch 1 oz copper PCB area yields a junction-to-ambient thermal resistance near 8 C/W. For continuous base-station duty cycle, an extruded aluminum cold plate or forced-air cooling is required. Solder the bottom tab paddle directly to the copper heatsink with plated thermal vias on 1 mm pitch to keep junction temperature within safe operating area during high-duty WiMAX OFDM bursts.
Use 50 ohm coplanar waveguide with ground (CPWG) on a low-loss substrate such as RO4350B or RO4003C for the input and output traces. Place gate and drain bias lines on a separate inner layer with feed-through bypass capacitors (100 pF, 10 nF, 1 uF) within 5 mm of each bias pin to prevent RF leakage into the supply. Per the NXP datasheet reference design, keep input and output traces orthogonal where they cross to minimize coupling, and place the device ground paddle directly over a continuous copper thermal pour stitched with at least 16 plated vias.
Always sequence the gate bias ON before applying the 28 V drain supply to prevent forward-biasing the LDMOS gate and damaging the die. Do not operate with Vdd above 32 V even momentarily because the internal drain-to-source breakdown voltage is the limiting factor at high RF voltage swings. Avoid placing the part near digital switching regulators or data converters without shielding, because the wideband on-chip matching does not include EMI filtering. Finally, do not bypass the input pre-match network in pursuit of higher gain - the factory on-chip match is optimized for efficiency across the full 400 MHz band, and modifying it voids the linearity guarantee.
Per the NXP MW7IC2750N reference design, the device requires a minimum of 4 sq inches of top-side copper heatsink spreading to maintain rated performance in CW operation. Route RF input and output traces on the top layer only, with the ground paddle on the top layer stitched through at least 20 plated thermal vias arranged in a 5x4 grid on 1 mm pitch. Decoupling capacitors must be placed within 5 mm of each bias pin and connected to a dedicated bias ground via that ties back to the main ground paddle. Avoid routing bias traces under the RF input/output traces on any layer to prevent coupling into the gate or feedback into the drain.
For linear modulation such as WiMAX or LTE, the MW7IC2750NBR1 should be backed off to approximately 8 W average (about 8 dB below P1dB) to maintain acceptable ACPR and EVM. The NXP datasheet specifies typical ACPR of -30 dBc at 8 W average output with WiMAX signal, which corresponds to roughly 3% EVM. For multicarrier GSM applications where linearity is even more critical, additional output back-off or digital pre-distortion (DPD) is recommended to achieve the spectral mask requirements. Input drive level should be held below +10 dBm for best linearity, with the on-chip gain providing the remainder of the signal lift to multi-watt levels.
규정 준수 정보
RoHS compliant per NiPdAu lead finish datasheet specification. The MW7IC2750NBR1 is a base-station RF amplifier not subject to AEC-Q100 automotive qualification. EOL/Obsolete lifecycle status noted in GlobalSpec and Octopart listings; NXP does not recommend new designs.
