MW7IC2750GNR1 - 8W 2.3-2.7GHz WiMAX RF Power Amplifier | NXP
부품 번호: MW7IC2750GNR1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.75 | $347.50 |
| 100 | $30.2 | $3,020.00 |
| 500 | $26.85 | $13,425.00 |
| 1,000 | $23.4 | $23,400.00 |
MW7IC2750GNR1 개요
An RF power amplifier (RF PA) is the final active stage in a wireless transmitter chain that boosts low-level modulated RF energy up to a level suitable for radiation by an antenna. RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a transistor technology optimized for high-power, high-frequency operation in base-station and broadcast transmitters; it sits within the broader hierarchy of power amplifier technologies (LDMOS -> RF power transistor -> power semiconductor -> discrete semiconductor). For OFDM-based systems such as WiMAX, WiBro, and broadband wireless access, the RF PA must simultaneously deliver high linearity and high efficiency while dissipating tens of watts of DC power.
Key differentiating features of the MW7IC2750GNR1 include on-chip matching that eliminates external baluns and matching components, integrated two-stage topology that simplifies driver chain design, and broadband operation across the full 2300-2700 MHz band without band-specific tuning. The TO-270 WB-14 package provides a high thermal-conductivity flange on the back side of the device for direct solder attachment to the PCB ground plane, enabling efficient heat extraction from the active die.
This device is fabricated using NXP's high-voltage LDMOS process, which provides high breakdown voltage (>65 V drain-source rating per the package marking referenced in the AiPCBA listing), excellent thermal stability, and proven long-term reliability in continuous-wave and modulated service. The integrated matching networks present a nominal 50 ohm interface at both RF ports, allowing the amplifier to be used as a drop-in gain block with standard test equipment and PCB transmission-line structures.
Typical applications include 2.3-2.7 GHz WiMAX and WiBro base-station power amplifiers, broadband wireless access (BWA) infrastructure, OFDM multicarrier Class AB and Class C amplifier stages, and driver or output stages for higher-power cascaded transmitter chains. The device is qualified for cellular base-station modulation formats including WiMAX, LTE (in legacy 2.6 GHz deployments), and similar OFDM waveforms.
When designing with this part, ensure the PCB provides a continuous ground plane and thermal via array directly under the package flange to keep junction temperature within rated limits. Decouple the VDD supply with a low-ESR bulk capacitor located close to the device leads, and follow the manufacturer evaluation-board layout to preserve the on-chip matching network's intended 50 ohm environment.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: MW7IC2750GNR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MW7IC2750GNR1 (동일 폼 팩터 및 풋프린트) — 차이점: Mounting Type, Package / Case, Power Gain, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
이 제품에는 사용 가능한 드롭인 대체품이 없습니다.
대체품 요청MW7IC2750GNR1 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Series | MW7IC2750N |
| RF Type | WiMAX / Broadband Wireless Access |
| Frequency Range | 2300 MHz to 2700 MHz |
| Supply Voltage (VDD) | 28 V (rated 26 V to 32 V operation) |
| Quiescent Supply Current | 550 mA (typical) |
| Output Power (Pout) | 8 W average (per datasheet title) |
| Power Gain | 26 dB (typical) |
| Characteristic Impedance | 50 ohm |
| 토폴로지 | Multi-stage integrated (on-chip input and output matching) |
| Technology | RF LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Breakdown Rating | 65 V (per package marking referenced in distributor listings) |
| 패키지 / 케이스 | TO-270 WB-14 Gull Wing, 14-pin |
| 실장 유형 | Surface Mount (gull-wing leads with back-side flange) |
| Packaging | Tape & Reel (TR) |
| Operating Class | Class AB or Class C (OFDM multicarrier capable) |
MW7IC2750GNR1 핀 구성
| 핀 1 | RF IN — RF input, 50 ohm nominal, on-chip matched |
| 핀 2 | GND / Flange — Ground and thermal pad on package back side |
| 핀 3 | VGG / Bias — Gate bias supply for first stage |
| 핀 4 | NC — Not connected (per datasheet) |
| 핀 5 | NC — Not connected (per datasheet) |
| 핀 6 | VDD1 — Drain supply for first stage, 28 V nominal |
| 핀 7 | NC — Not connected (per datasheet) |
| 핀 8 | NC — Not connected (per datasheet) |
| 핀 9 | VDD2 — Drain supply for second (output) stage, 28 V nominal |
| 핀 10 | NC — Not connected (per datasheet) |
| 핀 11 | NC — Not connected (per datasheet) |
| 핀 12 | VGG2 / Bias — Gate bias supply for second stage |
| 핀 13 | RF OUT — RF output, 50 ohm nominal, on-chip matched |
| 핀 14 | NC — Not connected (per datasheet) |
안전 동작 영역 (DC)
일반적인 애플리케이션
MW7IC2750GNR1 적합 용도: 6 애플리케이션s: 2.3-2.7 GHz WiMAX Base Station Power Amplifier, Broadband Wireless Access (BWA) Infrastructure, OFDM Multicarrier Class AB Amplifier, Driver Stage for Higher-Power Cascaded PAs, WiBro Wireless Broadband Service Amplifier, Test and Measurement RF Power Stage.
2.3-2.7 GHz WiMAX Base Station Power Amplifier
The MW7IC2750GNR1 is purpose-built for 2.3-2.7 GHz WiMAX base-station final-stage power amplification, delivering 8 W average OFDM-modulated output at 28 V. Its 26 dB gain and integrated 50 ohm matching networks eliminate the need for external inter-stage matching, simplifying the transmitter chain between the driver amplifier and the bandpass filter. The TO-270 WB-14 package's back-side flange allows direct soldering to the PCB ground plane, which acts as the primary thermal path for the roughly 15 W of DC bias dissipation. Companion parts include the MW7IC2750NR1 (same band, no 'G' suffix) and the MW7IC2240GNR1 (2.1 GHz variant) for multi-band base-station designs.
추천
Broadband Wireless Access (BWA) Infrastructure
The MW7IC2750GNR1's broadband on-chip matching from 2300-2700 MHz makes it well suited for BWA infrastructure deployments that span the full 2.3-2.7 GHz allocation without band-specific retuning. Its 8 W average output level is appropriate for small-cell and micro-cell BWA base stations, while its 50 ohm input and output ports allow direct integration with standard PCB transmission-line structures and laboratory test equipment. The LDMOS technology provides high efficiency under Class AB bias conditions, which is critical for OFDM waveforms with high PAPR distortion. Recommended companion parts include broadband circulators and bandpass filters matched to the 2.3-2.7 GHz band.
추천
OFDM Multicarrier Class AB Amplifier
The MW7IC2750GNR1 is rated for Class AB operation with OFDM multicarrier waveforms, making it a strong fit for high-PAPR signals such as WiMAX and broadband wireless. At 28 V supply and 550 mA quiescent current, the device delivers 8 W average output while maintaining the linearity required for error-vector-magnitude (EVM) compliance under multicarrier drive. Designers typically bias the gate at the Class AB inflection point to trade efficiency for linearity, then fine-tune quiescent current on the bench to meet the target spectral mask. The on-chip matching simplifies inter-stage design and reduces the bill of materials compared to discrete PA implementations.
추천
Driver Stage for Higher-Power Cascaded PAs
The MW7IC2750GNR1's 26 dB gain and 8 W output make it a useful driver stage when stacked upstream of a higher-power final PA in macro-cell transmitter chains. The 50 ohm on-chip-matched ports allow direct cascade with another LDMOS final stage through a short PCB trace and inter-stage attenuator, while the 28 V supply matches the standard LDMOS PA bias rail. In this role, the device is operated below compression to preserve linearity, and a small-signal gain block upstream provides the level-setting. This cascaded approach is common in Doherty and predistortion linearization architectures used in modern wireless infrastructure.
추천
WiBro Wireless Broadband Service Amplifier
WiBro (Wireless Broadband) is the Korean variant of mobile WiMAX operating in the 2.3-2.7 GHz band, and the MW7IC2750GNR1 is well suited for WiBro base-station and subscriber-station power amplification. Its broadband matching covers the full WiBro channelization without band-specific tuning, and its 8 W output supports both pico-cell downlink and high-power uplink driver applications. The TO-270 WB-14 gull-wing package is compatible with high-volume surface-mount assembly lines, which is important for cost-sensitive consumer-premises WiBro CPE equipment. Operating from a 28 V supply, the part integrates cleanly with standard telecom power architectures.
추천
Test and Measurement RF Power Stage
The MW7IC2750GNR1's integrated 50 ohm matching and broadband 2.3-2.7 MHz coverage make it useful as a bench RF power stage for test and measurement applications, including RF amplifier characterization, WiMAX device certification, and EMC pre-compliance test setups. Its 26 dB gain provides comfortable drive levels for downstream instrumentation, while its 8 W output can drive antennas, RF probes, and radiated-test fixtures directly. The TO-270 WB-14 gull-wing package is straightforward to integrate onto evaluation PCBs and test fixtures, and the device's stable LDMOS bias characteristics simplify repeatable measurement workflows.
추천
추천 제품 요약
엔지니어링 참조 데이터: MW7IC2750GNR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MW7IC2750NR1 | MW7IC2750NBR1 | MW7IC2240GNR1 | MW7IC2040GNR1 | MW7IC930GNR1 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same |
| Package | TO-270 WB-14 Gull Wing | TO-270 WB-14 Gull Wing - same | TO-270 WB-14 Gull Wing - same | TO-270 WB-14 Gull Wing - same | TO-270 WB-14 Gull Wing - same | TO-270 WB-14 Gull Wing - same |
| Frequency Range | 2300-2700 MHz | 2300-2700 MHz | 2300-2700 MHz | 2110-2170 MHz | 1930-1990 MHz | 900-940 MHz |
| Output Power (Pout avg) | 8 W | 8 W | 8 W | 8 W (2.1 GHz band) | 8 W (1.9 GHz band) | 8 W (900 MHz band) |
| Power Gain | 26 dB | 26 dB | 26 dB | 26 dB | 26 dB | 26 dB |
| Supply Voltage | 28 V (26-32 V rated) | 28 V (26-32 V rated) | 28 V (26-32 V rated) | 28 V (26-32 V rated) | 28 V (26-32 V rated) | 28 V (26-32 V rated) |
| RF Type | WiMAX / BWA | WiMAX / BWA | WiMAX / BWA | UMTS / LTE 2.1 GHz | PCS / UMTS 1.9 GHz | GSM / EDGE 900 MHz |
주요 차별점
- Integrated on-chip matching at both RF ports (vs MW7IC2750NR1)
- Optimized specifically for 2.3-2.7 GHz WiMAX band (vs MW7IC2240GNR1)
- Higher-frequency variant within the same family (vs MW7IC930GNR1)
설계 노트
The MW7IC2750GNR1 dissipates roughly 15 W of DC bias power at 28 V and 550 mA quiescent current. The TO-270 WB-14 package relies on direct soldering of the back-side metal flange to a continuous PCB ground plane for thermal dissipation; designers must provide a thermal via array directly under the flange to conduct heat into inner copper layers. A minimum 2 oz copper ground plane with 9-12 thermal vias (0.3 mm drill, 1 mm pitch) is recommended for continuous-wave 8 W operation. Without adequate thermal management, junction temperature will exceed the rated maximum and reliability will degrade rapidly.
The MW7IC2750GNR1 relies on its on-chip 50 ohm matching networks, which assume a specific PCB transmission-line environment at the RF input and RF output pins. Use the manufacturer evaluation-board stackup and trace geometry (typically microstrip on a low-loss substrate such as Rogers RO4003C) to preserve the intended 50 ohm interface. Keep RF traces short and avoid routing any DC or control signals across the RF path to minimize parasitic coupling. Place the VDD bulk-decoupling capacitor within 5 mm of the device VDD pins to suppress drain-supply ringing under OFDM peaks.
Do not substitute a band-shifted MW7IC2xxxGNR1 part (such as MW7IC2240GNR1 at 2.1 GHz or MW7IC930GNR1 at 900 MHz) without re-evaluating the matching networks and harmonic filter design, even though all five parts share the same TO-270 WB-14 footprint. Operating the amplifier outside its specified frequency band will cause significant gain ripple, reduced output power, and potential oscillation. Additionally, always sequence the gate bias (VGG) before applying the drain supply (VDD) to prevent uncontrolled current spikes that can damage the LDMOS die; a dedicated bias-sequencing controller is recommended.
규정 준수 정보
Compliance data was not available in the verified web sources for MW7IC2750GNR1; the part is an RF power amplifier for base-station infrastructure (AEC-Q100 not applicable). RoHS, REACH, lead-free, halogen-free, and conflict-minerals status to be confirmed from the NXP product page or via the manufacturer's compliance documentation. The part was originally developed by Freescale Semiconductor, which was acquired by NXP Semiconductors.
