NCV68061SNAIT1G-GEVB - Ideal Diode NMOS Controller Eval Board | onsemi
부품 번호: NCV68061SNAIT1G-GEVB ✓ 활성| 수량 | 단가 | 합계 |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
NCV68061SNAIT1G-GEVB 개요
An ideal diode controller is a power management IC that drives an external MOSFET to emulate a diode with near-zero forward voltage drop. Unlike a conventional silicon rectifier that dissipates roughly 0.7 V times the load current, an ideal diode pair of controller plus NMOS reduces forward loss to I2Rds(on) of the MOSFET. Within the power-protection hierarchy - fuses, TVS devices, rectifier diodes, ideal diode controllers - the NCV68061 sits at the high-efficiency end and is intended as a lower-loss, lower forward voltage replacement for power rectifier diodes in N+1 ORing and reverse-battery protection circuits.
Key features of the underlying NCV68061 include N+1 power supply ORing control, reverse polarity protection, low 215 uA supply current, control of the external NMOS ON/OFF state according to the source-to-drain voltage differential, and the automotive-qualified NCV prefix denoting suitability for AEC-qualified automotive environments. The low quiescent current is significant in always-on battery-fed modules where controller overhead must be minimized.
Technically, the controller continuously monitors the voltage across the external N-channel MOSFET and drives the gate to force forward conduction while blocking reverse current, effectively acting as an active rectifier. This allows multi-rail systems to share or select power sources without the diode-drop penalty that degrades low-voltage rails.
Typical evaluation scenarios on this GEVB board include automotive power-tree reverse-battery protection, N+1 redundant supply ORing in telecom and industrial infrastructure, and replacement of Schottky or standard rectifier diodes in 12 V and 24 V distribution nodes.
Design consideration: gate-drive slew and reverse-current blocking behavior depend strongly on the selected external NMOS Rds(on) and gate charge; follow the reference schematic on the board when selecting the MOSFET.
This page synthesizes distributor availability data, the onsemi evaluation-board portal, and practical application notes in one place - information gain beyond a standard datasheet listing.
드롭인 대체품: NCV68061SNAIT1G-GEVB — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: NCV68061SNAIT1G-GEVB (동일 폼 팩터 및 풋프린트) — 차이점: MSL Level, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
NCV68061SNAIT1G
✅ 드롭인✓ 재고 있음
$0.38 / 개
데이터시트 보기 →NCV68061SNAIT1G-GEVB 사양 (제조사 공개)
| Product Type | Evaluation Board |
| Board Part Number | NCV68061SNAIT1G-GEVB |
| Device Under Test | NCV68061SNAIT1G Ideal Diode NMOS Controller |
| Controller Function | Reverse Polarity Protection and Ideal Diode NMOS Controller |
| 토폴로지 | N+1 ORing Controller, N-Channel, 1:1 |
| Controller Supply Current | 215 uA |
| Controller Package | 6-TSOP (TSOT-23-6), Surface Mount |
| 실장 유형 | Surface Mount (controller IC) |
| MSL 레벨 | 1 (Unlimited) |
| RoHS 상태 | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| Automotive Qualification | NCV automotive-grade prefix |
NCV68061SNAIT1G-GEVB 인터페이스 및 커넥터
NCV68061SNAIT1G-GEVB에 대해 제조사에서 공개한 인터페이스 목록이 없습니다. 커넥터 및 헤더 세부 정보는 제조사 문서를 참조하십시오.
다음을 참조하십시오: 제조사 문서 전체 확장 헤더 핀아웃 및 커넥터 핀 번호는 다음을 참조하십시오.
일반적인 애플리케이션
NCV68061SNAIT1G-GEVB 적합 용도: 6 애플리케이션s: Automotive Reverse Battery Protection, N+1 Redundant Power Supply ORing, Diode Replacement in 12V/24V Power Distribution, Telecom and Networking Infrastructure Power, Battery-Backed UPS and Energy Storage Modules, Industrial Sensor and IoT Node Power Front Ends.
Automotive Reverse Battery Protection
The NCV68061SNAIT1G-GEVB demonstrates the NCV68061 ideal diode NMOS controller in automotive reverse-battery protection nodes. The automotive NCV prefix signals suitability for vehicle environments, and the 215 uA supply current keeps controller overhead negligible on always-connected battery rails. On the board, the controller senses source-to-drain differential across an external N-channel MOSFET and drives the gate, replacing a series rectifier diode whose ~0.7 V drop would waste power and heat at multi-amp loads. With a low-Rds(on) MOSFET, forward loss falls to milliwatt levels at typical 12 V module currents, and reverse polarity events are blocked by gate turn-off. Engineers validate transient and reverse-blocking behavior on this GEVB board before production layout. Companion parts: the external NMOS and input TVS diode are selected per the onsemi reference schematic.
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N+1 Redundant Power Supply ORing
In N+1 redundant architectures, multiple supplies feed a shared bus and each output is isolated by an ideal diode. DigiKey classifies the NCV68061SNAIT1G as an N+1 ORing Controller driving an N-Channel MOSFET in a 1:1 configuration, which is exactly this role. The controller enhances the MOSFET during forward delivery and turns it off when bus voltage exceeds the local rail, preventing reverse current from a healthy bus back into a failed or sagging supply. Compared with ORing diodes, the MOSFET-based approach removes the diode drop, improving end-to-end efficiency and reducing heat sink requirements in telecom and industrial power shelves. The GEVB evaluation board lets designers measure switchover behavior and reverse-blocking margins with their chosen external MOSFET before committing to production hardware.
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Diode Replacement in 12V/24V Power Distribution
onsemi positions the NCV68061 explicitly as a lower loss, lower forward voltage replacement for power rectifier diodes. In industrial 12 V and 24 V distribution panels, cascaded series diodes each subtract 0.5-0.7 V, eroding headroom for downstream regulators. Substituting an NCV68061 controller plus an N-channel MOSFET restores that voltage while cutting conduction loss to I2Rds(on). The 6-TSOP controller footprint is small enough to fit existing diode locations with minor layout changes, and the low 215 uA quiescent draw suits always-on control circuits. The evaluation board provides the reference gate-drive network and decoupling, so engineers can benchmark efficiency gains and reverse-recovery-free blocking on real loads. This application is common in factory automation power trees and building-control distribution nodes.
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Telecom and Networking Infrastructure Power
Telecom racks and networking equipment run mission-critical loads on redundant -48 V or 12 V intermediate buses, where ORing and reverse-current isolation are mandatory. Distributor data notes the NCV68061SNAIT1G is well suited to telecom and networking infrastructure power applications. The controller's N+1 ORing topology with an external N-channel MOSFET supports high current limits set by MOSFET selection rather than by the controller, and its low 215 uA consumption is compatible with always-powered management circuitry. The GEVB evaluation board enables validation of gate-drive timing under hot-swap-like load steps before integration. Because the part is ROHS3 compliant and MSL 1, it flows through standard telecom assembly processes without special handling beyond normal SMT reflow profiles.
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Battery-Backed UPS and Energy Storage Modules
Battery-backed systems need bidirectional protection: charge current flows into the battery, and the ideal diode prevents the battery from discharging back into a discharged or failed charger rail. The NCV68061SNAIT1G monitors the source-to-drain differential of its external N-channel MOSFET and blocks reverse flow with gate turn-off, acting as a near-lossless series diode. Its 215 uA supply current is important here because the controller remains connected across battery charge cycles and standby periods, where every microamp affects autonomy. The evaluation board lets designers verify blocking thresholds and gate-drive behavior with their specific battery voltage and MOSFET choice. The compact 6-TSOP controller package also fits dense battery-management PCBs where board area around the power path is limited.
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Industrial Sensor and IoT Node Power Front Ends
Field-deployed industrial sensors and IoT nodes are frequently mis-wired during installation, making reverse polarity protection essential. A conventional series diode wastes precious voltage headroom on 12 V or 24 V loops and dissipates heat in sealed enclosures. The NCV68061SNAIT1G plus an external N-channel MOSFET provides the same protection with a forward drop of only I times Rds(on), often tens of millivolts. The controller's 215 uA quiescent draw fits energy-conscious node power budgets, and its automotive NCV grade gives extra robustness margin for harsh industrial environments. The GEVB evaluation board provides a proven reference design including gate-drive and decoupling network, accelerating time to a validated production front end. ROHS3 compliance and MSL 1 simplify standard SMT assembly.
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추천 제품 요약
엔지니어링 참조 데이터: NCV68061SNAIT1G-GEVB — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | NCV68061SNAIT1G |
|---|---|---|
| Package | Evaluation Board (controller IC in 6-TSOP / TSOT-23-6) | 6-TSOP (TSOT-23-6) |
| Brand | onsemi | onsemi |
| Product Form | Evaluation Board | Controller IC |
| Function | Ideal Diode NMOS Controller demo platform | Reverse Polarity Protection / Ideal Diode NMOS Controller |
| ORing Topology | N+1 ORing, N-Channel, 1:1 (via IC on board) | N+1 ORing, N-Channel, 1:1 |
| Supply Current | 215 uA (controller on board) | 215 uA |
| Typical Use | Design validation / prototyping | Production design-in |
주요 차별점
- Automotive-grade NCV prefix with very low controller overhead (vs Conventional Schottky/rectifier diode solutions)
- Minimal 6-pin solution size (vs Multi-feature ideal diode/ORing controllers in larger packages)
- External MOSFET scales current rating (vs Controllers with integrated FETs)
설계 노트
The NCV68061 requires an external N-channel MOSFET; total conduction loss equals I2Rds(on) of that FET, so select Rds(on) based on your maximum continuous load current rather than on the controller. Estimate: at 5 A load with a 10 mohm MOSFET, dissipation is 0.25 W, versus roughly 3.5 W for a 0.7 V silicon diode - a 14x reduction. Also verify the controller's 215 uA supply current in your power budget for always-on rails, and check the datasheet maximum ratings for the allowed source-to-drain differential before choosing supply rails.
Keep the gate-drive loop between the NCV68061 and the external NMOS as short as possible on the production layout, mirroring the GEVB reference board. Place the controller's decoupling capacitor close to the supply pin, and route the source/drain sense connections as kelvin traces directly to the MOSFET terminals so the reverse-current comparator sees accurate differential voltage rather than PCB drop. The 6-TSOP controller footprint suits placement immediately adjacent to the MOSFET in the power path.
Do not assume cross-brand ideal diode controllers are pin-compatible with the NCV68061 in the 6-TSOP footprint - the web cross-reference data as of 2026-10-19 found no verified drop-in equivalents, so any substitution requires schematic-level rework. Also, when fast input transients occur (load dump or hot-plug), verify the reverse-blocking response time on the evaluation board with your chosen MOSFET, since gate-drive timing interacts with MOSFET gate charge and can allow brief reverse-current events if the FET is oversized for gate capacitance.
규정 준수 정보
ROHS3 Compliant, REACH Unaffected, MSL 1 (Unlimited) per PartGenie compliance data for the NCV68061SNAIT1G. Automotive NCV prefix per onsemi naming. Halogen-free and conflict-minerals status not stated in provided data.
