SI8273ABD-IM - 4A Isolated Gate Driver 2.5kV 2-Ch | LGA-14
부품 번호: SI8273ABD-IM ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $5.2 | $5.20 |
| 10 | $4.85 | $48.50 |
| 100 | $4.3 | $430.00 |
| 500 | $3.78 | $1,890.00 |
| 1,000 | $3.25 | $3,250.00 |
SI8273ABD-IM 개요
An isolated gate driver is a specialized interface IC that bridges a low-voltage control domain (a microcontroller or PWM controller) and a high-voltage power domain (the gate of a power switch). Galvanic isolation prevents fast-switching transients, ground loops, and high dv/dt events from corrupting the controller. Within the broader taxonomy, the SI8273ABD-IM sits under gate driver -> driver IC -> power management IC -> semiconductor, complementing functions such as low-side drivers, half-bridge drivers, and digital isolators.
Key features include 4 A peak output drive current, 2.5 kVrms isolation voltage, 5 V UVLO with HS/LS driver configuration, and high common-mode transient immunity (CMTI). The device accepts 2.5 V to 5 V VDD logic supply on the input side and supports driver-side VDD up to 25 V for direct gate bias of standard power MOSFETs. Internal RF capacitive coupling eliminates the optocoupler LED aging concern typical of legacy gate-drive optos.
The architecture uses an internal RF carrier and differential capacitive isolation barrier, transmitting PWM logic states across the barrier while rejecting fast common-mode transients. Compared to optocoupler-based gate drivers, the SI8273ABD-IM delivers tighter propagation delay matching between channels, lower pulse-width distortion, and a much longer operational life unaffected by LED degradation.
Typical applications include solar inverters, motor drives, industrial SMPS, isolated IGBT/SiC/GaN half-bridges, traction and UPS power stages, and digital control of high-voltage power converters. The wide driver supply range allows direct biasing of both 12 V/15 V MOSFETs and 18 V/20 V SiC or GaN FETs with a single part.
When laying out, keep the input-side and driver-side ground planes physically separated and join them only at the IC's GND pins to preserve isolation integrity. Place bypass capacitors as close as possible to each VDD pin, and route the high-current gate loop with minimal inductance to avoid ringing that could exceed the driver's CMTI rating.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: SI8273ABD-IM — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: SI8273ABD-IM (동일 폼 팩터 및 풋프린트) — 차이점: Common-Mode Transient Immunity (CMTI), Number of Channels, Package, Peak Output Current, Isolation Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
SI8273ABD-IM1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273ABD-IMR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273ABD-IM3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273ABD-IM1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273ABD
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$3.05 / 개
데이터시트 보기 →SI8273ABD-IM 최대 정격 & 전기적 특성
| Isolation Type | Galvanic, RF capacitive coupling |
| Isolation Voltage | 2500 Vrms |
| Number of Channels | 2 (high-side / low-side or dual independent) |
| Peak Output Current | 4 A |
| Input Configuration | Single PWM or dual digital inputs |
| Input Logic Supply (VDD) | 2.5 V to 5.5 V |
| UVLO Threshold | 5 V (HS/LS, with internal threshold) |
| Common-Mode Transient Immunity (CMTI) | High (RF capacitive isolation) |
| 패키지 | 14-LGA (5x5 mm) |
| 실장 유형 | Surface Mount |
| 동작 온도 | -40 C to +125 C |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| Compatible Switches | MOSFET, IGBT, SiC FET, GaN FET |
SI8273ABD-IM 핀 구성
| 핀 1 | VDD — Input-side logic supply (2.5 V to 5.5 V) |
| 핀 2 | GND — Input-side ground |
| 핀 3 | VIA — Logic input A (PWM or digital) |
| 핀 4 | VIB — Logic input B (PWM or digital) |
| 핀 5 | NC — Not connected (per datasheet) |
| 핀 6 | GND — Input-side ground (second bond pad) |
| 핀 7 | GNDA — Driver-side ground A |
| 핀 8 | VDDA — Driver-side supply A (up to 25 V) |
| 핀 9 | OUTA — Gate drive output A (4 A peak) |
| 핀 10 | GNDA — Driver-side ground A (second bond pad) |
| 핀 11 | GNDB — Driver-side ground B |
| 핀 12 | VDDB — Driver-side supply B (up to 25 V) |
| 핀 13 | OUTB — Gate drive output B (4 A peak) |
| 핀 14 | GNDB — Driver-side ground B (second bond pad) |
일반적인 애플리케이션
SI8273ABD-IM 적합 용도: 7 애플리케이션s: Solar Inverter Half-Bridge Gate Drive, Industrial Motor Drive IGBT Gate Drive, Isolated SMPS Primary-Side Gate Drive, SiC FET Half-Bridge Drive, GaN FET Direct Gate Drive, UPS and Energy Storage Power Stage, Traction and E-Mobility Inverter.
Solar Inverter Half-Bridge Gate Drive
The SI8273ABD-IM is well suited for solar inverter half-bridge stages driving IGBTs or SiC FETs at switching frequencies up to 100 kHz. Its 4 A peak output current and 2.5 kVrms galvanic isolation meet UL 1741 safety requirements while the RF capacitive barrier rejects the high dv/dt transients common at the switching node of a 600 V to 1200 V DC bus. The wide input VDD range (2.5 V to 5.5 V) interfaces directly to TI C2000 or Microchip dsPIC33 digital controllers without level shifters. With 4 A drive strength the part handles MOSFET Qg in the 100-200 nC range without external buffer stages, simplifying the BOM.
추천
Industrial Motor Drive IGBT Gate Drive
The SI8273ABD-IM drives IGBT modules in industrial motor drives where 600 V to 1700 V DC bus isolation is mandatory. Its dual-channel topology provides high-side and low-side drive for a half-bridge leg with matched propagation delay, critical for preventing shoot-through in PWM-controlled AC drives. The high CMTI of the RF capacitive barrier tolerates the >50 kV/us transients produced by IGBT turn-off, eliminating the common-mode-induced false triggering seen with optocoupler-based drivers. Industrial-grade -40 C to +125 C operation supports motor-drive cabinet environments without derating.
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Isolated SMPS Primary-Side Gate Drive
The SI8273ABD-IM provides isolated gate drive for the primary-side switches of high-voltage isolated SMPS topologies including full-bridge, phase-shifted full-bridge, and active-clamp forward converters. The 4 A drive current handles the high Qg of primary-side MOSFETs at 100 kHz to 500 kHz switching frequencies, while the 2500 Vrms isolation meets IEC 62368-1 reinforced insulation requirements for offline power conversion. Two channels in one package drive the half-bridge directly with matched delay, eliminating the timing mismatch that would otherwise cause flux imbalance in the power transformer.
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SiC FET Half-Bridge Drive
The SI8273ABD-IM drives SiC MOSFET half-bridges at switching frequencies above 100 kHz where high di/dt and dv/dt would defeat optocoupler-based drivers. Its 4 A peak output charges SiC FET gates in single-digit nanoseconds, enabling the high switching frequency required to shrink magnetics in EV traction and solar applications. The high CMTI of the RF capacitive isolation barrier tolerates the >100 V/ns switching transients produced by 1200 V SiC devices. Driver-side supply up to 20 V biases SiC FETs at their recommended gate voltage without additional level-shifting circuitry.
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GaN FET Direct Gate Drive
The SI8273ABD-IM directly drives enhancement-mode GaN FETs when biased at 6 V on the driver-side VDDA/VDDB supply. Its 4 A peak output current handles the low-Qg, ultra-fast GaN switching edges where standard MOSFET drivers cannot supply enough peak gate charge. The RF capacitive isolation barrier provides the >200 V/ns common-mode rejection required at 400 V to 600 V bus voltages. Two channels in one package drive a GaN half-bridge directly with matched propagation delay below 5 ns, eliminating shoot-through risk in high-frequency GaN-based DC-DC converters.
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UPS and Energy Storage Power Stage
The SI8273ABD-IM drives the IGBT half-bridge stages in uninterruptible power supplies and battery energy storage systems where 600 V to 1200 V DC bus isolation and 4 A gate drive are required. Its 2500 Vrms reinforced isolation meets the safety requirements of grid-tied energy storage per UL 9540. The high CMTI of the RF capacitive barrier rejects transients during IGBT short-circuit events that would latch up optocoupler-based drivers. Dual-channel configuration drives HS/LS in a single package, reducing BOM and PCB area versus two single-channel drivers.
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Traction and E-Mobility Inverter
The SI8273ABD-IM drives the IGBT/SiC power modules in electric vehicle traction inverters where AEC-Q100 automotive-grade reliability and 2.5 kVrms isolation are required. Its 4 A peak drive handles high-current power modules with gate-charge up to 1 uC, while the wide operating temperature range supports under-hood environments. The matched propagation delay between two channels enables precise dead-time control in 800 V battery systems, where shoot-through would catastrophically fail the power module. Two channels in one package reduce inverter gate-drive BOM cost and PCB area.
추천
추천 제품 요약
엔지니어링 참조 데이터: SI8273ABD-IM — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | SI8273ABD-IM1 | SI8273ABD-IMR | SI8273ABD-IM3 | SI8273ABD |
|---|---|---|---|---|---|
| Brand | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions |
| Package | 14-LGA (5x5) | 14-QFN (5x5) | 14-LGA (5x5) - same | 13-LGA (5x5) | 14-LGA (5x5) - same |
| Isolation Voltage | 2500 Vrms | 2500 Vrms | 2500 Vrms | 2500 Vrms | 2500 Vrms |
| Number of Channels | 2 | 2 | 2 | 1 | 2 |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A (1.8 A continuous) | 4 A |
| UVLO Threshold | 5 V (HS/LS) | 5 V (HS/LS) | 5 V (HS/LS) | 5 V | 5 V (HS/LS) |
| Input Configuration | Single PWM or dual digital | VIA/VIB HS/LS | Single PWM or dual digital | Single PWM | Single PWM or dual digital |
주요 차별점
- RF capacitive isolation barrier eliminates optocoupler aging (vs Optocoupler-based gate drivers (e.g. HCPL-3120))
- Dual-channel 4 A drive in single 5x5 mm package (vs Two single-channel isolated drivers)
- Wide input VDD range interfaces directly to 3.3 V and 5 V controllers (vs Single-supply gate drivers requiring 5 V only)
설계 노트
Keep input-side (GND, VDD, VIA, VIB) and driver-side (GNDA/GNDB, VDDA/VDDB, OUTA/OUTB) ground planes physically separated, joining at a single point under the IC's ground pins. Place 100 nF and 1 uF X7R bypass capacitors within 2 mm of each VDDA/VDDB and VDD pin. Route the gate-drive loop (OUTx -> gate -> source -> GNDx) with minimal area to keep parasitic inductance below 5 nH, preventing ringing that would exceed the driver's CMTI rating.
Select VDDA/VDDB based on the target switch: 12 V for standard power MOSFETs, 15 V for IGBTs, 18 V to 20 V for SiC FETs, 6 V for GaN FETs. Add a local 100 nF X7R bypass plus a 4.7 uF to 10 uF bulk capacitor on each VDDA/VDDB rail to supply the 4 A peak gate-charge current without collapsing the supply rail during fast switching edges. Estimated gate-drive power loss = 4 G Vdrive G Qg G fsw; size VDDA/VDDB source impedance accordingly.
The 14-LGA (5x5) package has a relatively small thermal pad. Estimated power dissipation at 100 kHz switching with 100 nC Qg is approximately 200 mW to 300 mW per channel, well within the package rating. For 500 kHz switching or higher-Qg power modules, ensure the PCB thermal pad connects to a 1 square inch copper pour on each driver-side ground plane to keep junction temperature below 125 C.
Do not run logic signals (VIA, VIB) parallel to or directly under the gate-drive outputs - high dv/dt on OUTA/OUTB can capacitively couple back into the logic side and corrupt PWM timing. Keep input traces short (<25 mm) and away from switching-node copper pours. Place a small RC filter (100 ohm + 100 pF) on VIA/VIB only if measured logic-side noise exceeds 100 mV during switching.
Do not share GNDA/GNDB or VDDA/VDDB nets across multiple SI8273 channels - each channel requires its own local bypass network to prevent cross-channel ground bounce. Do not exceed 30 V on VDDA/VDDB (absolute maximum). Verify dead-time control at the controller level rather than relying on the driver's channel-to-channel matching alone - matched propagation delay typically tracks within 30 ns but real-world systems require deliberate dead-time insertion.
규정 준수 정보
RoHS and lead-free confirmed per Skyworks product page. The SI8273ABD-IM is industrial grade (-40 C to +125 C); AEC-Q100 automotive grade variants exist in the Si827x family as separate part numbers.
