SMBT2907AE6327HTSA1 - 60V 600mA PNP BJT | Infineon
부품 번호: SMBT2907AE6327HTSA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
SMBT2907AE6327HTSA1 개요
A bipolar junction transistor, or BJT, is a three-terminal semiconductor device that uses charge carriers to control current between a collector and emitter. In a PNP transistor, the emitter is normally biased above the base, and the collector current is controlled by base drive. The BJT belongs to the transistor hierarchy, which also includes NPN devices, and is widely used for switching, amplification, level translation, biasing, and driver stages.
The SMBT2907A family provides low collector-emitter saturation voltage, a characteristic explicitly identified in the retrieved Infineon data. Its 60 V voltage rating supports higher-voltage control and switching circuits than lower-voltage general-purpose transistors, while the 200 MHz transition frequency supports faster switching behavior. The 600 mA collector-current and 330 mW power figures define the headline electrical limits used when selecting the part.
The device is suitable for low- and medium-frequency signal stages, transistor-switched loads, bias networks, and complementary switching arrangements. In automotive and industrial systems, the AEC-Q101 qualification designation can simplify qualification work when the exact ordering variant and all operating requirements are acceptable. The SOT-23 footprint also supports compact PCB layouts, although correct pin orientation is essential because the emitter, base, and collector functions are not interchangeable.
Designers should verify the maximum ratings, DC current, power dissipation, thermal conditions, and switching behavior against the manufacturer datasheet before applying the device as a direct replacement. Base current must be sufficient to keep the transistor in the intended operating region; otherwise, saturation voltage and switching performance may suffer. The retrieved data does not provide verified pricing tiers, so commercial values are represented by the required data-needed markers rather than guessed.
This page combines verified manufacturer-family specifications, distributor listings, cross-reference evidence, package details, application guidance, and engineering selection notes to provide a practical reference for engineers evaluating this PNP transistor.
드롭인 대체품: SMBT2907AE6327HTSA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MMBT2907A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MMBT2907ALT1HTSA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SMBT2907A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SMBT2222A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MMBT2222A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SMBT2907AE6327HTSA1 최대 정격 & 전기적 특성
| 트랜지스터 유형 | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage | 60 V |
| Collector Current | 600 mA |
| Transition Frequency | 200 MHz |
| Device Power Dissipation | 330 mW |
| 패키지 | SOT-23, 3-pin |
| Package Designation | PG-SOT23 |
| 실장 유형 | Surface Mount |
| Pin Configuration | 1 = B, 2 = E, 3 = C |
| Type Marking | s2F |
| Collector-Emitter Saturation Voltage | Low collector-emitter saturation voltage; exact value not provided |
| Complementary Type | SMBT2222A / MMBT2222A NPN |
| Pb-Free Package | Pb-free |
| RoHS 상태 | RoHS compliant |
| Automotive Qualification | AEC-Q101 Type |
SMBT2907AE6327HTSA1 핀 구성
| 핀 1 | B — Base |
| 핀 2 | E — Emitter |
| 핀 3 | C — Collector |
일반적인 애플리케이션
SMBT2907AE6327HTSA1 적합 용도: 6 애플리케이션s: Automotive low-side switching, General-purpose signal amplification, Transistor load-driver circuits, Bias networks and level shifting, Power-sequencing and polarity control, Complementary switching pair.
Automotive low-side switching
SMBT2907AE6327HTSA1 is a PNP transistor identified with automotive AEC-Q101 Type qualification in the retrieved distributor data. It can be considered for low-side switching or biasing stages where the load, current, and voltage remain within the verified 600 mA and 60 V headline ratings. The SOT-23 package supports compact layouts, but automotive production should also verify the exact ordering code, quality documentation, temperature requirements, transient limits, and supplier traceability before release.
추천
General-purpose signal amplification
The PNP bipolar junction structure makes SMBT2907AE6327HTSA1 suitable for small-signal amplification when the circuit operates inside the device ratings. The verified 200 MHz transition frequency and 60 V collector-emitter rating provide useful design context for biasing and signal paths, while low collector-emitter saturation voltage is specifically identified by the Infineon family data. Exact gain, saturation current, noise, and frequency-response values must be taken from the complete manufacturer datasheet before setting bias points.
추천
Transistor load-driver circuits
SMBT2907AE6327HTSA1 can be used as a PNP driver element when its emitter, base, and collector connections match the required current path. The device’s 600 mA collector-current and 330 mW power figures are important limits for load selection, while the 60 V rating constrains the voltage applied across the transistor. Use base resistance or a driver stage to control turn-on and turn-off, and verify the actual load, duty cycle, and PCB thermal conditions.
추천
Bias networks and level shifting
A PNP transistor is useful in bias networks because its emitter-base junction can establish a controlled reference and its collector path can provide polarity-dependent drive. SMBT2907AE6327HTSA1 is relevant when the circuit needs a compact surface-mount device with a 60 V headline collector-emitter rating and a 200 MHz transition-frequency figure. Confirm leakage, gain, saturation voltage, and temperature coefficients from the complete datasheet before relying on accurate analog bias behavior.
추천
Power-sequencing and polarity control
In a polarity-sensitive control circuit, SMBT2907AE6327HTSA1 can provide PNP switching behavior when base drive pulls the transistor into the desired conduction state. The verified pin mapping of 1 = B, 2 = E, and 3 = C makes layout orientation especially important. Designers should check the maximum voltage, current, power dissipation, and thermal rise under the worst-case load, and should not infer missing DC gain or storage-temperature limits from the distributor snippets.
추천
Complementary switching pair
SMBT2907AE6327HTSA1 can be paired with the verified complementary SMBT2222A/MMBT2222A NPN types to build push-pull or alternating-polarity switching arrangements. The complementary relationship is identified in the retrieved Infineon data, which makes it useful for coordinated drive stages. The pair still requires independent base-drive design, current-limit analysis, and thermal verification; the same SOT-23 format does not eliminate polarity, gain, or saturation-voltage differences.
추천
추천 제품 요약
엔지니어링 참조 데이터: SMBT2907AE6327HTSA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MMBT2907A | MMBT2907ALT1HTSA1 | SMBT2907A | SMBT2222A | MMBT2222A |
|---|---|---|---|---|---|---|
| Package | SOT-23, 3-pin | SOT-23, 3-pin | SOT-23, 3-pin | SOT-23, 3-pin | SOT-23, 3-pin | SOT-23, 3-pin |
| Brand | Infineon | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Transistor Polarity | PNP | PNP | PNP | PNP | NPN | NPN |
주요 차별점
- Verified automotive-oriented ordering designation (vs MMBT2907A)
- Explicit 600 mA collector-current headline rating (vs MMBT2907ALT1HTSA1)
- PNP polarity with low saturation-voltage family feature (vs SMBT2222A)
설계 노트
Use the verified SOT-23 orientation 1 = B, 2 = E, and 3 = C. A PNP transistor must be biased with the emitter above the base; reversing the collector and emitter can produce incorrect operation or damage. Before assembly, compare the PCB footprint and polarity marking against the manufacturer drawing, especially when replacing a similarly packaged device.
The headline ratings are 60 V collector-emitter voltage, 600 mA collector current, and 330 mW device power. These values are not interchangeable across all operating conditions. Check the complete manufacturer maximum-rating table, pulse limits, and thermal information, then calculate the worst-case dissipation from the actual collector-emitter voltage and current rather than relying only on the nominal power figure.
For switching and driver circuits, keep the transistor close to the driven load and provide adequate copper area for heat dissipation. Preserve a compact return path for emitter current and route high-current copper independently from sensitive signal paths. Validate the layout against the manufacturer package dimensions and ensure that the SOT-23 pads match the selected PCB footprint.
Use a base resistor or controlled driver so the transistor does not remain improperly biased during startup or saturation transitions. The Infineon family data identifies low collector-emitter saturation voltage, but actual saturation behavior depends on base current and load current. Confirm those conditions in the complete datasheet and scope the switching node in the final design.
규정 준수 정보
The retrieved Infineon-family data identifies the package as Pb-free and RoHS compliant. The distributor listing identifies automotive AEC-Q101 qualification. REACH, halogen-free status, and conflict-minerals status are not provided.
