STP10N60M2 - 600V 10A N-Channel Power MOSFET | STMicroelectronics
부품 번호: STP10N60M2 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.0455 | $2.05 |
| 10 | $1.4773 | $14.77 |
| 100 | $1.3068 | $130.68 |
| 500 | $1.25 | $625.00 |
| 1,000 | $1.1932 | $1,193.20 |
STP10N60M2 개요
A power MOSFET is a type of field-effect transistor specifically designed to handle significant power levels. It operates by controlling the flow of current through a semiconductor channel using an electric field, allowing for efficient switching and amplification in power circuits. Power MOSFETs are fundamental components in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, and are essential for managing and converting electrical energy in modern electronic systems.
Key features of the STP10N60M2 include a very low gate charge (Qg) of 25 nC, which enables fast switching and reduced switching losses, and a high dv/dt capability for ruggedness in demanding applications. The device also features an intrinsic body diode with fast recovery characteristics, making it suitable for bridge topologies. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), balancing conduction and switching losses for high efficiency.
The STP10N60M2 utilizes ST's MDmesh M2 vertical structure, which reduces the on-resistance and gate charge compared to conventional planar MOSFETs. This technology enhances the device's performance in high-frequency switching applications, where minimizing losses is critical. The device's low thermal resistance (junction-to-case) of 1.67 °C/W allows efficient heat dissipation, enabling reliable operation at high power levels with appropriate heatsinking.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and industrial power converters. The 600V rating makes it suitable for universal input (85-265V AC) offline power supplies, while the 10A current capability supports power levels up to several hundred watts. The fast switching characteristics are ideal for active PFC stages operating at 100-200 kHz.
When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the specified low on-resistance. The gate-source voltage must not exceed ±25V, and a gate resistor is recommended to control switching speed and reduce EMI. Adequate heatsinking is essential for continuous operation at high currents, and a snubber circuit may be required for inductive load switching.
드롭인 대체품: STP10N60M2 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
STP10N60M2-1
📋 참조 대체품 (카탈로그에 없음)
STP10N60M2-1
📋 참조 대체품 (카탈로그에 없음)
IPP60R099CP
📋 참조 대체품 (카탈로그에 없음)
FCP10N60N
📋 참조 대체품 (카탈로그에 없음)
TK10A60W
📋 참조 대체품 (카탈로그에 없음)
STP10N60M2 최대 정격 & 전기적 특성
| Technology | MDmesh M2 |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 10 A |
| Continuous Drain Current (ID) at 100°C | 6.3 A |
| Pulsed Drain Current (IDM) | 40 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On-Resistance (RDS(on)) typical | 0.55 ohm |
| On-Resistance (RDS(on)) max | 0.65 ohm |
| Total Gate Charge (Qg) | 25 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 90 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Power Dissipation (PD) | 110 W |
| 동작 온도 범위 | -55°C to +150°C |
| 패키지 | TO-220 |
| 실장 유형 | Through Hole |
| RoHS 상태 | Compliant |
STP10N60M2 핀 구성
| 핀 1 | Gate — Gate terminal for controlling the MOSFET |
| 핀 2 | Drain — Drain terminal, connected to the heat sink tab |
| 핀 3 | Source — Source terminal |
안전 동작 영역
일반적인 애플리케이션
STP10N60M2 적합 용도: 6 애플리케이션s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Industrial Power Converters, Solar Inverters, Uninterruptible Power Supplies (UPS).
Switch-Mode Power Supplies (SMPS)
The STP10N60M2 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance, enabling efficient power conversion. In a typical flyback or forward converter, the MOSFET switches at high frequency, and its low gate charge (25 nC) reduces switching losses. The device's fast body diode helps in bridge topologies, and its thermal resistance (1.67 °C/W) allows for effective heat dissipation. Compared to older planar MOSFETs, the MDmesh M2 technology offers a better figure of merit, improving overall efficiency. Designers should ensure proper gate drive and snubber circuits to minimize EMI and voltage spikes.
추천
Power Factor Correction (PFC)
In active PFC circuits, the STP10N60M2 operates in boost converter topology to shape the input current waveform. Its 600V rating handles the boosted voltage, and the low gate charge enables high-frequency operation (100-200 kHz) to reduce inductor size. The device's low on-resistance minimizes conduction losses, improving efficiency. The fast switching characteristics reduce EMI, and the rugged dv/dt capability ensures reliability under transient conditions. For a 1kW PFC stage, the MOSFET dissipates approximately 10W, requiring a heatsink. The MDmesh M2 technology provides a good balance between switching and conduction losses, making it a preferred choice.
추천
LED Lighting Drivers
The STP10N60M2 is used in LED drivers for high-power lighting, where it switches the input voltage to regulate current. Its 600V rating is suitable for offline applications, and the low on-resistance reduces power loss, improving driver efficiency. The device's fast switching allows for compact magnetic components, reducing the overall size of the driver. In a typical buck or flyback LED driver, the MOSFET operates at 65-100 kHz, and its low gate charge simplifies the gate drive circuit. Thermal management is critical; at 1A average current, the power dissipation is around 0.55W, which is manageable with a small heatsink. The device's ruggedness ensures long-term reliability in harsh environments.
추천
Industrial Power Converters
In industrial power converters, such as motor drives and DC-DC converters, the STP10N60M2 provides reliable switching for high-voltage rails. Its 600V rating and 10A current capability support power levels up to several kilowatts. The low on-resistance minimizes conduction losses, and the fast switching reduces switching losses, improving overall efficiency. The device's high dv/dt capability ensures robustness in inductive load switching. In a typical three-phase inverter, the MOSFET is used in the bridge configuration, and its body diode provides freewheeling. Proper gate drive and protection circuits are essential to prevent overvoltage and overcurrent conditions.
추천
Solar Inverters
The STP10N60M2 is suitable for solar inverters, where it converts DC from solar panels to AC for grid connection. Its 600V rating handles the high voltage from series-connected panels, and the low on-resistance reduces losses, improving conversion efficiency. The device's fast switching enables high-frequency operation, reducing the size of magnetics. In a typical string inverter, the MOSFET is used in a boost stage and an H-bridge. The low gate charge simplifies the gate drive, and the ruggedness ensures reliability in outdoor environments. Thermal management is critical; at 10A, the power dissipation is around 5.5W, requiring a heatsink.
추천
Uninterruptible Power Supplies (UPS)
In UPS systems, the STP10N60M2 is used in the inverter stage to convert DC from the battery to AC. Its 600V rating is suitable for the high-voltage DC bus, and the low on-resistance minimizes losses, extending battery life. The device's fast switching enables clean AC output with low harmonic distortion. In a typical UPS, the MOSFET operates in a full-bridge topology, and its body diode provides freewheeling. The low gate charge reduces gate drive power, and the ruggedness ensures reliable operation during power outages. Thermal management is essential; at 10A, the power dissipation is around 5.5W, requiring a heatsink.
추천
추천 제품 요약
엔지니어링 참조 데이터: STP10N60M2 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | STP10N60M2-1 | IPP60R099CP | FCP10N60N | TK10A60W |
|---|---|---|---|---|---|
| Package | TO-220 | TO-220FP | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi | Toshiba |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 10 A | 10 A | 11 A | 10 A | 10 A |
| On-Resistance (RDS(on)) typical | 0.55 ohm | 0.55 ohm | 0.099 ohm | 0.55 ohm | 0.75 ohm |
| Total Gate Charge (Qg) | 25 nC | 25 nC | 40 nC | 30 nC | 35 nC |
| Power Dissipation (PD) | 110 W | 110 W | 150 W | 110 W | 100 W |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
주요 차별점
- Low on-resistance of 0.55 ohm typical (vs TK10A60W)
- Low gate charge of 25 nC (vs IPP60R099CP)
- MDmesh M2 technology (vs FCP10N60N)
설계 노트
The STP10N60M2 has a maximum power dissipation of 110W at 25°C case temperature. In continuous operation at 10A, the conduction loss is approximately 55W (I^2 * RDS(on) = 100 * 0.55). This requires a heatsink with a thermal resistance of less than 1.1 °C/W to keep the junction temperature below 150°C. Use thermal compound and ensure proper mounting torque for the TO-220 package.
For the TO-220 package, the drain tab is connected to the drain terminal. When mounting on a PCB, ensure adequate copper area for heat dissipation, and consider using a heatsink attached to the tab. Keep the gate drive traces short to minimize inductance and ringing. Place a gate resistor (typically 10-100 ohm) close to the gate pin to control switching speed and reduce EMI.
Do not exceed the maximum gate-source voltage of ±25V. Use a gate driver that provides a stable 10V to 15V gate drive to fully enhance the MOSFET. Ensure the drain-source voltage does not exceed 600V, especially during switching transients; use a snubber circuit or clamping diode if necessary. The body diode has a reverse recovery time; in bridge topologies, consider using an external fast-recovery diode to reduce losses.
규정 준수 정보
RoHS compliant per STMicroelectronics. Not AEC-Q100 qualified; for automotive use, consider AEC-Q101 parts.
