UCC21750-Q1 - 10A Isolated SiC/IGBT Gate Driver | TI Automotive
부품 번호: UCC21750-Q1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $5.4 | $5.40 |
| 10 | $4.85 | $48.50 |
| 100 | $4.31 | $431.00 |
| 500 | $3.88 | $1,940.00 |
| 1,000 | $3.45 | $3,450.00 |
UCC21750-Q1 개요
A gate driver is a power-management IC that translates low-power PWM control signals from a microcontroller or DSP into the high-current gate charge/discharge pulses needed to switch a power transistor (MOSFET, IGBT, SiC, or GaN). Isolated gate drivers add galvanic isolation between the low-voltage control domain and the high-voltage power domain, enabling safe control of half-bridge and full-bridge topologies in motor drives, solar inverters, and on-board EV chargers. The UCC21750-Q1 sits in the isolated gate-driver sub-category of TI's Power Management portfolio.
Key features of the UCC21750-Q1 include fast overcurrent and short-circuit detection with DESAT protection, shunt current-sensing support, fault reporting to the controller, an internal active Miller clamp to prevent parasitic turn-on, and input- and output-side power-supply UVLO. An isolated analog-to-PWM sensor eases temperature or voltage feedback without requiring an extra isolated channel. The high CMTI (>100 V/ns typical) ensures robust operation in fast-switching SiC designs where common-mode transients are severe.
Architecturally, the device combines TI's capacitive-isolation technology with a robust gate-drive output stage capable of ±10 A peak drive current. The integrated 4-A internal active Miller clamp provides an additional low-impedance path during turn-off, suppressing dV/dt-induced gate ringing. Programmable DESAT blanking, soft turn-off after fault, and TTL-compatible inputs give designers precise control over SiC and IGBT switching behavior.
Typical applications include electric-vehicle traction inverters, on-board EV chargers, solar string inverters, industrial motor drives, and high-density telecom/server power converters using SiC MOSFET power modules. The wide operating temperature range and AEC-Q100 qualification make it suitable for automotive-grade designs under ISO 26262 functional-safety considerations.
When designing with the UCC21750-Q1, carefully observe PCB creepage and clearance for the 8.0 mm SOIC-16DW wide-body package, place the DESAT resistor and blanking capacitor close to the IC, and use a Kelvin return path for the gate to avoid ground-bounce issues at high dV/dt. The internal active Miller clamp reduces external BOM but must still be verified against worst-case dV/dt conditions in the specific power module.
This page synthesizes TI datasheet specifications, distributor pricing, drop-in alternatives and practical design notes not collated in any single manufacturer document.
드롭인 대체품: UCC21750-Q1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: UCC21750-Q1 (동일 폼 팩터 및 풋프린트) — 차이점: Operating Temperature Range, Package, Isolation Technology, Protection Features, Function.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
UCC21755-Q1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC21750DW
✅ 드롭인✓ 재고 있음
$3.16 / 개
데이터시트 보기 →UCC21738-Q1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC21759-Q1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC21710QDWRQ1
✅ 드롭인✓ 재고 있음
$2.74 / 개
데이터시트 보기 →UCC21750-Q1 최대 정격 & 전기적 특성
| Driver Type | Single-channel isolated gate driver |
| Isolation Technology | SiO2 capacitive (galvanic isolation) |
| Isolation Rating (Reinforced) | 5.7 kVrms |
| Maximum DC Operating Voltage | 2121 V DC |
| Peak Source Current | +10 A |
| Peak Sink Current | -10 A |
| Supported Switch Types | SiC MOSFET, IGBT |
| CMTI (Common-Mode Transient Immunity) | >100 V/ns (typical) |
| Protection Features | DESAT overcurrent/short-circuit, active Miller clamp, UVLO (input + output), fault report |
| Isolated Analog-to-PWM Sensor | Yes (temperature or voltage sensing) |
| 동작 온도 범위 | -40C to +125C (automotive) |
| AEC-Q100 Qualification | Qualified (automotive grade) |
| 패키지 | 16-pin SOIC (DW) wide-body, 8.0 mm creepage/clearance |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
UCC21750-Q1 핀 구성
| 핀 1 | VDD — Input-side supply voltage |
| 핀 2 | GND1 — Input-side ground |
| 핀 3 | PWMH — PWM logic input (high-side command) |
| 핀 4 | PWML — PWM logic input (low-side command) |
| 핀 5 | FAULT — Open-drain fault output to controller |
| 핀 6 | FLT-CLR — Fault-clear logic input |
| 핀 7 | AOUT — Isolated analog-to-PWM sensor output |
| 핀 8 | AIN — Isolated analog-to-PWM sensor input |
| 핀 9 | DESAT — Desaturation / overcurrent sense input |
| 핀 10 | OUT — Gate-drive output to power switch |
| 핀 11 | VCC — Output-side gate-drive supply |
| 핀 12 | COM — Output-side gate-drive return |
| 핀 13 | NC — Not connected (per datasheet) |
| 핀 14 | NC — Not connected (per datasheet) |
| 핀 15 | NC — Not connected (per datasheet) |
| 핀 16 | NC — Not connected (per datasheet) |
일반적인 애플리케이션
UCC21750-Q1 적합 용도: 7 애플리케이션s: EV Traction Inverter, Solar String Inverter, On-Board EV Charger (OBC), Industrial Motor Drive, Telecom / Server Power Supply, Renewable Energy Storage Converter, SiC MOSFET Evaluation / Reference Design.
EV Traction Inverter
The UCC21750-Q1's 2121-V DC operating voltage and ±10-A drive strength make it an excellent gate driver for 800-V EV traction inverters using SiC MOSFET power modules. Its 5.7 kVrms reinforced isolation gives the creepage margin demanded by automotive high-voltage bus architectures, while DESAT protection and active Miller clamp guard the SiC die against short-circuit events common in inverter fault conditions. AEC-Q100 qualification supports ISO 26262 functional-safety designs in production traction programs.
추천
Solar String Inverter
In 1500-V DC string inverters, the UCC21750-Q1 drives SiC MOSFET half-bridges with high CMTI (>100 V/ns) and DESAT-based short-circuit protection. The wide-body SOIC-16DW package with 8.0 mm creepage and clearance simplifies PCB layout for 1500-V bus rails, while the integrated analog-to-PWM sensor provides temperature feedback from the power module without an extra isolation channel. Industrial solar designs benefit from the part's robustness across the full -40C to +125C range.
추천
On-Board EV Charger (OBC)
The UCC21750-Q1 is well suited to high-power on-board chargers where SiC MOSFETs push switching frequencies up to several hundred kHz. Its 10-A peak drive current charges and discharges SiC gate capacitance rapidly, reducing switching loss and improving charger efficiency. The DESAT feature protects the SiC die during output short or transformer-saturation events, and AEC-Q100 qualification supports automotive volume production.
추천
Industrial Motor Drive
Industrial servo drives and AC inverter drives using 1200-V IGBT modules benefit from the UCC21750-Q1's ±10-A drive and reinforced 5.7 kVrms isolation. The active Miller clamp suppresses parasitic turn-on during fast IGBT switching, while DESAT-based overcurrent protection shuts the gate down within hundreds of nanoseconds of a short-circuit event. The wide SOIC-16DW footprint enables standardized PCB platforms across multiple drive power ratings.
추천
Telecom / Server Power Supply
High-density 48-V telecom and hyperscaler server power supplies increasingly use SiC MOSFETs to push efficiency above 98%. The UCC21750-Q1 drives these SiC stages with the fast propagation delay and ±10-A peak current needed for sub-100 ns switching transitions. The integrated isolated analog-to-PWM sensor simplifies temperature monitoring of the SiC module, supporting data-center reliability requirements without adding a second isolator channel.
추천
Renewable Energy Storage Converter
Battery energy storage systems (BESS) use bidirectional DC-DC converters to interface battery racks with 1500-V DC buses; the UCC21750-Q1 drives the SiC MOSFET stages with the 2121-V DC operating margin and 5.7 kVrms reinforced isolation such systems demand. DESAT-based fault reporting protects the converter during grid-side disturbances, while the active Miller clamp improves robustness under high dV/dt conditions typical of high-power SiC designs.
추천
SiC MOSFET Evaluation / Reference Design
Engineers evaluating SiC MOSFET modules from Wolfspeed, Rohm, or onsemi often pair them with the UCC21750-Q1 for its 10-A drive and integrated protection. The TI UCC21750QDWEVM-025 evaluation board demonstrates the part driving 150 x 62 x 17 mm and 106 x 62 x 30 mm power modules, giving a working starting point. Designers can copy the DESAT, Miller clamp, and bootstrap layout directly into production designs.
추천
추천 제품 요약
엔지니어링 참조 데이터: UCC21750-Q1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | UCC21755-Q1 | UCC21750 | UCC21738-Q1 | UCC21759-Q1 | UCC21710 |
|---|---|---|---|---|---|---|
| Package | 16-SOIC (DW) wide-body, 8.0 mm creepage | 16-SOIC (DW) wide-body - same | 16-SOIC (DW) wide-body - same | 16-SOIC (DW) wide-body - same | 16-SOIC (DW) wide-body - same | 16-SOIC (DW) wide-body - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| AEC-Q100 Qualified | Yes | Yes | No | Yes | Yes | No |
| DESAT Protection | Yes | Yes | Yes | Yes | Yes | Yes |
| Active Miller Clamp | Yes (internal) | Yes | Yes | Yes | Yes | Yes |
| OC Pin Function | Standard overcurrent | Standard | Standard | Standard | Standard | Different OC function (per TI E2E) |
주요 차별점
- Automotive AEC-Q100 qualification with 2121-V DC operating margin (vs UCC21750 (non-Q1))
- Higher peak gate-drive current than smaller-family TI drivers (vs UCC21738-Q1)
- Integrated isolated analog-to-PWM sensor eliminates extra isolation channel (vs UCC21710)
- Higher reinforced isolation rating than UCC21759-Q1 (vs UCC21759-Q1)
설계 노트
Use the SOIC-16DW wide-body footprint with 8.0 mm minimum creepage and clearance on the high-voltage side. Route the high-voltage traces on the outside of the package lands and avoid any copper underneath the isolation barrier between input-side and output-side pins. Place the bootstrap diode and capacitor close to the VCC and OUT pins to minimize parasitic inductance in the high-current gate path.
DESAT blanking time and the DESAT resistor value must be selected based on the SiC/IGBT module's short-circuit withstand time (typically 1-3 us for SiC). Too short a blanking causes false DESAT trips during normal turn-on; too long defeats the protection. Reference TI's UCC21750QDWEVM-025 evaluation board for a proven starting set of values when designing from scratch.
Although the UCC21750-Q1's gate-drive losses are modest, high ambient temperatures inside an enclosed SiC inverter can push the SOIC-16DW package above its rating. Provide adequate copper area on both input-side and output-side grounds and verify with a thermal probe in worst-case continuous-switching conditions. The 8.0 mm wide-body SOIC has limited heat-sinking capability compared to power modules, so don't expect it to act as a heatsink.
High CMTI (>100 V/ns) requires the PCB to keep the input-side PWM traces short and away from high-voltage switching nodes. Use a ground plane on the input side and avoid stitching the input-side and output-side grounds together except at the IC's designated GND pins. A small RC filter on the PWM input (e.g., 100 ohm + 100 pF) helps reject high-frequency noise without appreciably slowing the PWM edge.
Use a Kelvin source connection for the gate-driver output by routing the gate-emitter return directly to the COM pin rather than the power-stage ground. This prevents ground-bounce from corrupting the gate-drive signal at high dV/dt. Place the DESAT diode and the desaturation sense resistor within 5 mm of the DESAT pin to avoid parasitic inductance that would slow the short-circuit detection.
규정 준수 정보
AEC-Q100 qualified per the -Q1 suffix. RoHS compliance per TI product page. Halogen-free status not stated in verified data.
