UCC21750-Q1 - 10A Isolated SiC/IGBT Gate Driver | TI Automotive
MPN: UCC21750-Q1 ✓ فعالUCC21750-Q1 جائزہ
A gate driver is a power-management IC that translates low-power PWM control signals from a microcontroller or DSP into the high-current gate charge/discharge pulses needed to switch a power transistor (MOSFET, IGBT, SiC, or GaN). Isolated gate drivers add galvanic isolation between the low-voltage control domain and the high-voltage power domain, enabling safe control of half-bridge and full-bridge topologies in motor drives, solar inverters, and on-board EV chargers. The UCC21750-Q1 sits in the isolated gate-driver sub-category of TI's Power Management portfolio.
Key features of the UCC21750-Q1 include fast overcurrent and short-circuit detection with DESAT protection, shunt current-sensing support, fault reporting to the controller, an internal active Miller clamp to prevent parasitic turn-on, and input- and output-side power-supply UVLO. An isolated analog-to-PWM sensor eases temperature or voltage feedback without requiring an extra isolated channel. The high CMTI (>100 V/ns typical) ensures robust operation in fast-switching SiC designs where common-mode transients are severe.
Architecturally, the device combines TI's capacitive-isolation technology with a robust gate-drive output stage capable of ±10 A peak drive current. The integrated 4-A internal active Miller clamp provides an additional low-impedance path during turn-off, suppressing dV/dt-induced gate ringing. Programmable DESAT blanking, soft turn-off after fault, and TTL-compatible inputs give designers precise control over SiC and IGBT switching behavior.
Typical applications include electric-vehicle traction inverters, on-board EV chargers, solar string inverters, industrial motor drives, and high-density telecom/server power converters using SiC MOSFET power modules. The wide operating temperature range and AEC-Q100 qualification make it suitable for automotive-grade designs under ISO 26262 functional-safety considerations.
When designing with the UCC21750-Q1, carefully observe PCB creepage and clearance for the 8.0 mm SOIC-16DW wide-body package, place the DESAT resistor and blanking capacitor close to the IC, and use a Kelvin return path for the gate to avoid ground-bounce issues at high dV/dt. The internal active Miller clamp reduces external BOM but must still be verified against worst-case dV/dt conditions in the specific power module.
This page synthesizes TI datasheet specifications, distributor pricing, drop-in alternatives and practical design notes not collated in any single manufacturer document.
کے لیے ڈراپ اِن متبادل UCC21750-Q1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں UCC21750-Q1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Operating Temperature Range, Package, Isolation Technology, Protection Features, Function.
UCC21755-Q1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC21750DW
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →UCC21738-Q1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC21759-Q1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC21710QDWRQ1
✅ ڈراپ-اِن✗ اسٹاک سے باہر
$2.74 / یونٹ
ڈیٹا شیٹ دیکھیں →UCC21750-Q1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Driver Type | Single-channel isolated gate driver |
| Isolation Technology | SiO2 capacitive (galvanic isolation) |
| Isolation Rating (Reinforced) | 5.7 kVrms |
| Maximum DC Operating Voltage | 2121 V DC |
| Peak Source Current | +10 A |
| Peak Sink Current | -10 A |
| Supported Switch Types | SiC MOSFET, IGBT |
| CMTI (Common-Mode Transient Immunity) | >100 V/ns (typical) |
| Protection Features | DESAT overcurrent/short-circuit, active Miller clamp, UVLO (input + output), fault report |
| Isolated Analog-to-PWM Sensor | Yes (temperature or voltage sensing) |
| آپریٹنگ درجہ حرارت رینج | -40C to +125C (automotive) |
| AEC-Q100 Qualification | Qualified (automotive grade) |
| پیکیج | 16-pin SOIC (DW) wide-body, 8.0 mm creepage/clearance |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
UCC21750-Q1 پن کنفیگریشن
| پن 1 | VDD — Input-side supply voltage |
| پن 2 | GND1 — Input-side ground |
| پن 3 | PWMH — PWM logic input (high-side command) |
| پن 4 | PWML — PWM logic input (low-side command) |
| پن 5 | FAULT — Open-drain fault output to controller |
| پن 6 | FLT-CLR — Fault-clear logic input |
| پن 7 | AOUT — Isolated analog-to-PWM sensor output |
| پن 8 | AIN — Isolated analog-to-PWM sensor input |
| پن 9 | DESAT — Desaturation / overcurrent sense input |
| پن 10 | OUT — Gate-drive output to power switch |
| پن 11 | VCC — Output-side gate-drive supply |
| پن 12 | COM — Output-side gate-drive return |
| پن 13 | NC — Not connected (per datasheet) |
| پن 14 | NC — Not connected (per datasheet) |
| پن 15 | NC — Not connected (per datasheet) |
| پن 16 | NC — Not connected (per datasheet) |
عام استعمالات
UCC21750-Q1 کے لیے موزوں ہے 7 ایپلیکیشنs: EV Traction Inverter, Solar String Inverter, On-Board EV Charger (OBC), Industrial Motor Drive, Telecom / Server Power Supply, Renewable Energy Storage Converter, SiC MOSFET Evaluation / Reference Design.
EV Traction Inverter
The UCC21750-Q1's 2121-V DC operating voltage and ±10-A drive strength make it an excellent gate driver for 800-V EV traction inverters using SiC MOSFET power modules. Its 5.7 kVrms reinforced isolation gives the creepage margin demanded by automotive high-voltage bus architectures, while DESAT protection and active Miller clamp guard the SiC die against short-circuit events common in inverter fault conditions. AEC-Q100 qualification supports ISO 26262 functional-safety designs in production traction programs.
تجویز کردہ
Solar String Inverter
In 1500-V DC string inverters, the UCC21750-Q1 drives SiC MOSFET half-bridges with high CMTI (>100 V/ns) and DESAT-based short-circuit protection. The wide-body SOIC-16DW package with 8.0 mm creepage and clearance simplifies PCB layout for 1500-V bus rails, while the integrated analog-to-PWM sensor provides temperature feedback from the power module without an extra isolation channel. Industrial solar designs benefit from the part's robustness across the full -40C to +125C range.
تجویز کردہ
On-Board EV Charger (OBC)
The UCC21750-Q1 is well suited to high-power on-board chargers where SiC MOSFETs push switching frequencies up to several hundred kHz. Its 10-A peak drive current charges and discharges SiC gate capacitance rapidly, reducing switching loss and improving charger efficiency. The DESAT feature protects the SiC die during output short or transformer-saturation events, and AEC-Q100 qualification supports automotive volume production.
تجویز کردہ
Industrial Motor Drive
Industrial servo drives and AC inverter drives using 1200-V IGBT modules benefit from the UCC21750-Q1's ±10-A drive and reinforced 5.7 kVrms isolation. The active Miller clamp suppresses parasitic turn-on during fast IGBT switching, while DESAT-based overcurrent protection shuts the gate down within hundreds of nanoseconds of a short-circuit event. The wide SOIC-16DW footprint enables standardized PCB platforms across multiple drive power ratings.
تجویز کردہ
Telecom / Server Power Supply
High-density 48-V telecom and hyperscaler server power supplies increasingly use SiC MOSFETs to push efficiency above 98%. The UCC21750-Q1 drives these SiC stages with the fast propagation delay and ±10-A peak current needed for sub-100 ns switching transitions. The integrated isolated analog-to-PWM sensor simplifies temperature monitoring of the SiC module, supporting data-center reliability requirements without adding a second isolator channel.
تجویز کردہ
Renewable Energy Storage Converter
Battery energy storage systems (BESS) use bidirectional DC-DC converters to interface battery racks with 1500-V DC buses; the UCC21750-Q1 drives the SiC MOSFET stages with the 2121-V DC operating margin and 5.7 kVrms reinforced isolation such systems demand. DESAT-based fault reporting protects the converter during grid-side disturbances, while the active Miller clamp improves robustness under high dV/dt conditions typical of high-power SiC designs.
تجویز کردہ
SiC MOSFET Evaluation / Reference Design
Engineers evaluating SiC MOSFET modules from Wolfspeed, Rohm, or onsemi often pair them with the UCC21750-Q1 for its 10-A drive and integrated protection. The TI UCC21750QDWEVM-025 evaluation board demonstrates the part driving 150 x 62 x 17 mm and 106 x 62 x 30 mm power modules, giving a working starting point. Designers can copy the DESAT, Miller clamp, and bootstrap layout directly into production designs.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا UCC21750-Q1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | UCC21755-Q1 | UCC21750 | UCC21738-Q1 | UCC21759-Q1 | UCC21710 |
|---|---|---|---|---|---|---|
| Package | 16-SOIC (DW) wide-body, 8.0 mm creepage | 16-SOIC (DW) wide-body - same | 16-SOIC (DW) wide-body - same | 16-SOIC (DW) wide-body - same | 16-SOIC (DW) wide-body - same | 16-SOIC (DW) wide-body - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| AEC-Q100 Qualified | Yes | Yes | No | Yes | Yes | No |
| DESAT Protection | Yes | Yes | Yes | Yes | Yes | Yes |
| Active Miller Clamp | Yes (internal) | Yes | Yes | Yes | Yes | Yes |
| OC Pin Function | Standard overcurrent | Standard | Standard | Standard | Standard | Different OC function (per TI E2E) |
اہم امتیازی خصوصیات
- Automotive AEC-Q100 qualification with 2121-V DC operating margin (بمقابلہUCC21750 (non-Q1))
- Higher peak gate-drive current than smaller-family TI drivers (بمقابلہUCC21738-Q1)
- Integrated isolated analog-to-PWM sensor eliminates extra isolation channel (بمقابلہUCC21710)
- Higher reinforced isolation rating than UCC21759-Q1 (بمقابلہUCC21759-Q1)
ڈیزائن نوٹس
Use the SOIC-16DW wide-body footprint with 8.0 mm minimum creepage and clearance on the high-voltage side. Route the high-voltage traces on the outside of the package lands and avoid any copper underneath the isolation barrier between input-side and output-side pins. Place the bootstrap diode and capacitor close to the VCC and OUT pins to minimize parasitic inductance in the high-current gate path.
DESAT blanking time and the DESAT resistor value must be selected based on the SiC/IGBT module's short-circuit withstand time (typically 1-3 us for SiC). Too short a blanking causes false DESAT trips during normal turn-on; too long defeats the protection. Reference TI's UCC21750QDWEVM-025 evaluation board for a proven starting set of values when designing from scratch.
Although the UCC21750-Q1's gate-drive losses are modest, high ambient temperatures inside an enclosed SiC inverter can push the SOIC-16DW package above its rating. Provide adequate copper area on both input-side and output-side grounds and verify with a thermal probe in worst-case continuous-switching conditions. The 8.0 mm wide-body SOIC has limited heat-sinking capability compared to power modules, so don't expect it to act as a heatsink.
High CMTI (>100 V/ns) requires the PCB to keep the input-side PWM traces short and away from high-voltage switching nodes. Use a ground plane on the input side and avoid stitching the input-side and output-side grounds together except at the IC's designated GND pins. A small RC filter on the PWM input (e.g., 100 ohm + 100 pF) helps reject high-frequency noise without appreciably slowing the PWM edge.
Use a Kelvin source connection for the gate-driver output by routing the gate-emitter return directly to the COM pin rather than the power-stage ground. This prevents ground-bounce from corrupting the gate-drive signal at high dV/dt. Place the DESAT diode and the desaturation sense resistor within 5 mm of the DESAT pin to avoid parasitic inductance that would slow the short-circuit detection.
تعمیل کی معلومات
AEC-Q100 qualified per the -Q1 suffix. RoHS compliance per TI product page. Halogen-free status not stated in verified data.
