UCC23513BQDWYQ1 - 4A/5A 5.7kVrms Isolated Gate Driver SOIC-6 | TI
부품 번호: UCC23513BQDWYQ1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.57 | $25.70 |
| 100 | $2.28 | $228.00 |
| 500 | $1.95 | $975.00 |
| 1,000 | $1.72 | $1,720.00 |
UCC23513BQDWYQ1 개요
An isolated gate driver is a critical signal-conditioning and level-shifting IC that sits between a low-voltage microcontroller or DSP and a high-voltage, high-current power switch (IGBT, SiC MOSFET, or GaN FET). It performs three essential functions: galvanic isolation for high-voltage safety, level shifting from logic-level PWM inputs to gate-drive voltages, and current amplification to charge and discharge the large gate capacitance of power switches within tens of nanoseconds. UCC23513BQDWYQ1 falls within the isolated gate driver category of the power management IC hierarchy, addressing automotive motor drive, traction inverter, and industrial power-conversion designs.
Key features include a wide driver supply range of up to 33 V, common-mode transient immunity (CMTI) of >100 kV/µs, and propagation delay of <100 ns with tight part-to-part matching for synchronous rectification. The Q1 suffix confirms AEC-Q100 qualification for automotive applications, and the SOIC-6 (DWY) wide-body package provides the necessary creepage and clearance for reinforced isolation. Integrated protection features include input-to-output isolation, undervoltage lockout, and thermal shutdown.
The capacitive isolation barrier uses TI's proprietary silicon-dioxide-based high-voltage capacitor technology, achieving >100 kV/µs CMTI which prevents false triggering in high dV/dt switching environments. This makes the part particularly suited to SiC MOSFET drives where edge rates exceed 50 kV/µs. The driver accepts CMOS/TTL inputs and supports both 8 V and 12 V UVLO options for direct drive of IGBTs (12 V gate) and SiC MOSFETs (with 8 V option for negative gate bias designs).
Typical applications include automotive traction inverters, on-board chargers, DC fast-charging stations, industrial motor drives, solar inverters, and UPS systems. The reinforced isolation makes it suitable for drives operating above 600 V with safety-critical isolation requirements per IEC 61800-5-1.
When designing with this device, ensure that the gate-drive supply bypass uses 1 uF/X7R minimum close to VCC and that the gate resistor is sized to limit peak gate current below the 5 A sink rating. Layout creepage must be maintained per IEC 60664-1 for the SOIC-6 wide-body footprint.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: UCC23513BQDWYQ1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: UCC23513BQDWYQ1 (동일 폼 팩터 및 풋프린트) — 차이점: Operating Temperature, Package, Peak Sink Current, Peak Source Current, Product Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
UCC23513BQDWYRQ1
✅ 드롭인✓ 재고 있음
$1.85 / 개
데이터시트 보기 →UCC23511BQDWYQ1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC23313BQDWYQ1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC23514BQDWYQ1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC23513BQDWYQ1 최대 정격 & 전기적 특성
| Product Type | Isolated Gate Driver (single channel) |
| Isolation Technology | Capacitive Coupling |
| Isolation Voltage (RMS) | 5700 Vrms (reinforced) |
| Peak Source Current | 4 A |
| Peak Sink Current | 5 A |
| UVLO Options | 8 V / 12 V |
| Driver Supply Range | Up to 33 V |
| 패키지 | SOIC-6 (DWY) wide-body |
| 핀 수 | 6 |
| CMTI | >100 kV/us |
| Propagation Delay | <100 ns |
| 동작 온도 | -40C to +125C |
| Automotive Qualification | AEC-Q100 Grade 1 |
| 출력 구성 | Push-pull (high-side/low-side driver) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 2 (1 year) |
| RoHS 상태 | Compliant |
UCC23513BQDWYQ1 핀 구성
| 핀 1 | VDD1 — Input side supply voltage (3.3V/5V) |
| 핀 2 | IN+ — Non-inverting PWM input |
| 핀 3 | IN- — Inverting PWM input (tie high for non-inverting) |
| 핀 4 | GND1 — Input side ground reference |
| 핀 5 | VCC2 — Output/driver side supply (up to 33V) |
| 핀 6 | OUT — Gate drive output to IGBT/SiC MOSFET gate |
일반적인 애플리케이션
UCC23513BQDWYQ1 적합 용도: 6 애플리케이션s: EV Traction Inverter, On-Board Charger (OBC), Solar String Inverter, Industrial Motor Drive (VFD), DC Fast Charging Station, Uninterruptible Power Supply (UPS).
EV Traction Inverter
The UCC23513BQDWYQ1's 4 A source / 5 A sink drive capability and >100 kV/us CMTI directly address 800 V automotive SiC inverter platforms. Per TI datasheet documentation, its 5.7 kVRMS reinforced isolation meets IEC 61800-5-1 safety requirements for traction applications. The 8 V UVLO option supports SiC MOSFETs with negative gate bias, while the SOIC-6 (DWY) wide-body package provides the creepage needed across 12.6 mm minimum clearance barriers. Placed between the traction MCU and the SiC power module gate, it eliminates the LED aging issues of optocouplers that previously limited automotive inverter lifetimes.
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On-Board Charger (OBC)
The UCC23513BQDWYQ1's capacitive isolation and 5.7 kVRMS rating suit 800 V OBC primary-side PFC and LLC topologies where reinforced isolation is mandatory. The 4 A drive strength charges typical 22 nC SiC MOSFET gates within 6 ns, achieving the >100 V/ns switching rates needed for >1 MHz operation per TI datasheet specifications. AEC-Q100 Grade 1 qualification allows direct placement in automotive OBC modules without additional screening, and the >100 kV/us CMTI rejects the fast transients from PFC switch nodes that would otherwise couple through to the MCU side.
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Solar String Inverter
The UCC23513BQDWYQ1 drives 1200 V IGBT modules in three-phase solar inverters with 4 A source / 5 A sink current sufficient for 50 A-class modules per TI datasheet. Its reinforced 5.7 kVRMS isolation meets IEC 62109-1 requirements for PV installations, while the SOIC-6 (DWY) wide-body footprint provides 8 mm minimum creepage for outdoor high-humidity environments. The 12 V UVLO option matches standard IGBT gate drive requirements, and the >100 kV/us CMTI tolerates the fast dV/dt of 50 kHz switching converters without false triggering.
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Industrial Motor Drive (VFD)
The UCC23513BQDWYQ1 provides the reinforced isolation and 4 A/5 A drive strength required for 480 V industrial AC drives per TI datasheet. The capacitive isolation barrier eliminates the common-mode noise issues of optocouplers that historically limited inverter reliability, while the 5.7 kVRMS rating satisfies IEC 61800-5-1 for industrial motor control. The SOIC-6 (DWY) wide-body package allows direct retrofit of existing opto-coupled drive boards without PCB layout changes, and the AEC-Q100 grade provides extra margin in harsh factory environments.
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DC Fast Charging Station
The UCC23513BQDWYQ1's 5.7 kVRMS reinforced isolation and >100 kV/us CMTI are critical for 350 kW+ DC fast charging stations where SiC MOSFET modules switch at 100+ kHz per TI datasheet. The 4 A drive charges 30 nC SiC gates within 8 ns for high-frequency operation, while the capacitive isolation rejects common-mode noise from the 1000 V DC bus. AEC-Q100 Grade 1 qualification provides reliability headroom for unattended charging installations, and the SOIC-6 (DWY) footprint simplifies multi-channel driver board layouts.
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Uninterruptible Power Supply (UPS)
The UCC23513BQDWYQ1 drives 600 V/1200 V IGBT modules in double-conversion UPS systems with reinforced isolation per TI datasheet. The 4 A/5 A drive capability handles high-power modules in 100 kVA+ systems, while >100 kV/us CMTI ensures noise immunity in the high-density switching environment. The 12 V UVLO option supports standard IGBT gate drive, and AEC-Q100 grade provides extra reliability margin for critical infrastructure applications.
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추천 제품 요약
엔지니어링 참조 데이터: UCC23513BQDWYQ1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | UCC23513BQDWYRQ1 | UCC23511BQDWYQ1 | UCC23313BQDWYQ1 |
|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | SOIC-6 (DWY) | SOIC-6 (DWY) - same | SOIC-6 (DWY) - same | SOIC-6 (DWY) - same |
| Peak Source Current | 4 A | 4 A | 1.5 A | 4 A |
| Peak Sink Current | 5 A | 5 A | 2 A | 5 A |
| Isolation Voltage | 5.7 kVRMS | 5.7 kVRMS | 5.7 kVRMS | 5.7 kVRMS |
| UVLO Options | 8V / 12V | 8V / 12V | 8V / 12V | 12V only |
| CMTI | >100 kV/us | >100 kV/us | >100 kV/us | >100 kV/us |
| Automotive Grade | AEC-Q100 Grade 1 | AEC-Q100 Grade 1 | AEC-Q100 Grade 1 | AEC-Q100 Grade 1 |
주요 차별점
- Dual UVLO options (8V/12V) in same package (vs UCC23313BQDWYQ1)
- Higher peak drive current for larger power modules (vs UCC23511BQDWYQ1)
- Pin-to-pin opto-coupler compatibility (vs ACPL-302J (Broadcom))
설계 노트
Place a 1 uF/X7R 50V bypass capacitor as close as possible to the VCC2 pin (Pin 5) to provide peak gate-charge current. For SiC MOSFETs with Qg >30 nC, increase VCC2 bulk capacitance to 4.7 uF minimum. Add a 0.1 uF high-frequency ceramic in parallel. Per TI datasheet recommendations, insufficient VCC2 decoupling causes voltage droop during switching events that may trigger UVLO false faults.
Maintain minimum 8 mm creepage distance between input-side (Pins 1-4) and output-side (Pins 5-6) copper traces on the PCB top layer per IEC 60664-1 for reinforced isolation. The SOIC-6 (DWY) wide-body package provides the package-level clearance, but PCB layout must not violate clearance at any point including under the package. Route high-current gate-drive traces with 50 ohm controlled impedance for fastest switching.
Do not tie IN- to GND1 - the UCC23513BQDWYQ1 expects a differential input and treats IN- left floating as undefined logic. For single-ended PWM input, tie IN- to VDD1 (logic high) and drive IN+. Per TI datasheet pin description, IN- should be held above 0.7*VDD1 to enable the output. Also avoid leaving OUT unconnected during PCB test - use a 10 kOhm pull-down to prevent floating gate damage during power-up.
규정 준수 정보
AEC-Q100 Grade 1 qualified per TI datasheet. RoHS and REACH compliant. Lead-free and halogen-free per TI product page specifications.
