UCC23513BQDWYQ1 - 4A/5A 5.7kVrms Isolated Gate Driver SOIC-6 | TI
料号： UCC23513BQDWYQ1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.57 | $25.70 |
| 100 | $2.28 | $228.00 |
| 500 | $1.95 | $975.00 |
| 1,000 | $1.72 | $1,720.00 |
UCC23513BQDWYQ1 概述
An isolated gate driver is a critical signal-conditioning and level-shifting IC that sits between a low-voltage microcontroller or DSP and a high-voltage, high-current power switch (IGBT, SiC MOSFET, or GaN FET). It performs three essential functions: galvanic isolation for high-voltage safety, level shifting from logic-level PWM inputs to gate-drive voltages, and current amplification to charge and discharge the large gate capacitance of power switches within tens of nanoseconds. UCC23513BQDWYQ1 falls within the isolated gate driver category of the power management IC hierarchy, addressing automotive motor drive, traction inverter, and industrial power-conversion designs.
Key features include a wide driver supply range of up to 33 V, common-mode transient immunity (CMTI) of >100 kV/µs, and propagation delay of <100 ns with tight part-to-part matching for synchronous rectification. The Q1 suffix confirms AEC-Q100 qualification for automotive applications, and the SOIC-6 (DWY) wide-body package provides the necessary creepage and clearance for reinforced isolation. Integrated protection features include input-to-output isolation, undervoltage lockout, and thermal shutdown.
The capacitive isolation barrier uses TI's proprietary silicon-dioxide-based high-voltage capacitor technology, achieving >100 kV/µs CMTI which prevents false triggering in high dV/dt switching environments. This makes the part particularly suited to SiC MOSFET drives where edge rates exceed 50 kV/µs. The driver accepts CMOS/TTL inputs and supports both 8 V and 12 V UVLO options for direct drive of IGBTs (12 V gate) and SiC MOSFETs (with 8 V option for negative gate bias designs).
Typical applications include automotive traction inverters, on-board chargers, DC fast-charging stations, industrial motor drives, solar inverters, and UPS systems. The reinforced isolation makes it suitable for drives operating above 600 V with safety-critical isolation requirements per IEC 61800-5-1.
When designing with this device, ensure that the gate-drive supply bypass uses 1 uF/X7R minimum close to VCC and that the gate resistor is sized to limit peak gate current below the 5 A sink rating. Layout creepage must be maintained per IEC 60664-1 for the SOIC-6 wide-body footprint.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： UCC23513BQDWYQ1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： UCC23513BQDWYQ1 （相同外形与封装尺寸） ——差异在于 Operating Temperature, Package, Peak Sink Current, Peak Source Current, Product Type.
快速对比工具——选择替代料号进行并排对比：
UCC23513BQDWYRQ1
✅ 直接替换✓ 有现货
$1.85 / 个
查看数据手册 →UCC23511BQDWYQ1
✅ 直接替换📋 参考替代料（不在目录中）
UCC23313BQDWYQ1
✅ 直接替换📋 参考替代料（不在目录中）
UCC23514BQDWYQ1
✅ 直接替换📋 参考替代料（不在目录中）
UCC23513BQDWYQ1 最大额定值与电气特性
| Product Type | Isolated Gate Driver (single channel) |
| Isolation Technology | Capacitive Coupling |
| Isolation Voltage (RMS) | 5700 Vrms (reinforced) |
| Peak Source Current | 4 A |
| Peak Sink Current | 5 A |
| UVLO Options | 8 V / 12 V |
| Driver Supply Range | Up to 33 V |
| 封装 | SOIC-6 (DWY) wide-body |
| 引脚数量 | 6 |
| CMTI | >100 kV/us |
| Propagation Delay | <100 ns |
| 工作温度 | -40C to +125C |
| Automotive Qualification | AEC-Q100 Grade 1 |
| 输出配置 | Push-pull (high-side/low-side driver) |
| 安装类型 | Surface Mount |
| MSL 等级 | 2 (1 year) |
| RoHS 状态 | Compliant |
UCC23513BQDWYQ1 引脚配置
| 引脚 1 | VDD1 — Input side supply voltage (3.3V/5V) |
| 引脚 2 | IN+ — Non-inverting PWM input |
| 引脚 3 | IN- — Inverting PWM input (tie high for non-inverting) |
| 引脚 4 | GND1 — Input side ground reference |
| 引脚 5 | VCC2 — Output/driver side supply (up to 33V) |
| 引脚 6 | OUT — Gate drive output to IGBT/SiC MOSFET gate |
典型应用
UCC23513BQDWYQ1 适用于 6 应用s: EV Traction Inverter, On-Board Charger (OBC), Solar String Inverter, Industrial Motor Drive (VFD), DC Fast Charging Station, Uninterruptible Power Supply (UPS).
EV Traction Inverter
The UCC23513BQDWYQ1's 4 A source / 5 A sink drive capability and >100 kV/us CMTI directly address 800 V automotive SiC inverter platforms. Per TI datasheet documentation, its 5.7 kVRMS reinforced isolation meets IEC 61800-5-1 safety requirements for traction applications. The 8 V UVLO option supports SiC MOSFETs with negative gate bias, while the SOIC-6 (DWY) wide-body package provides the creepage needed across 12.6 mm minimum clearance barriers. Placed between the traction MCU and the SiC power module gate, it eliminates the LED aging issues of optocouplers that previously limited automotive inverter lifetimes.
推荐
On-Board Charger (OBC)
The UCC23513BQDWYQ1's capacitive isolation and 5.7 kVRMS rating suit 800 V OBC primary-side PFC and LLC topologies where reinforced isolation is mandatory. The 4 A drive strength charges typical 22 nC SiC MOSFET gates within 6 ns, achieving the >100 V/ns switching rates needed for >1 MHz operation per TI datasheet specifications. AEC-Q100 Grade 1 qualification allows direct placement in automotive OBC modules without additional screening, and the >100 kV/us CMTI rejects the fast transients from PFC switch nodes that would otherwise couple through to the MCU side.
推荐
Solar String Inverter
The UCC23513BQDWYQ1 drives 1200 V IGBT modules in three-phase solar inverters with 4 A source / 5 A sink current sufficient for 50 A-class modules per TI datasheet. Its reinforced 5.7 kVRMS isolation meets IEC 62109-1 requirements for PV installations, while the SOIC-6 (DWY) wide-body footprint provides 8 mm minimum creepage for outdoor high-humidity environments. The 12 V UVLO option matches standard IGBT gate drive requirements, and the >100 kV/us CMTI tolerates the fast dV/dt of 50 kHz switching converters without false triggering.
推荐
Industrial Motor Drive (VFD)
The UCC23513BQDWYQ1 provides the reinforced isolation and 4 A/5 A drive strength required for 480 V industrial AC drives per TI datasheet. The capacitive isolation barrier eliminates the common-mode noise issues of optocouplers that historically limited inverter reliability, while the 5.7 kVRMS rating satisfies IEC 61800-5-1 for industrial motor control. The SOIC-6 (DWY) wide-body package allows direct retrofit of existing opto-coupled drive boards without PCB layout changes, and the AEC-Q100 grade provides extra margin in harsh factory environments.
推荐
DC Fast Charging Station
The UCC23513BQDWYQ1's 5.7 kVRMS reinforced isolation and >100 kV/us CMTI are critical for 350 kW+ DC fast charging stations where SiC MOSFET modules switch at 100+ kHz per TI datasheet. The 4 A drive charges 30 nC SiC gates within 8 ns for high-frequency operation, while the capacitive isolation rejects common-mode noise from the 1000 V DC bus. AEC-Q100 Grade 1 qualification provides reliability headroom for unattended charging installations, and the SOIC-6 (DWY) footprint simplifies multi-channel driver board layouts.
推荐
Uninterruptible Power Supply (UPS)
The UCC23513BQDWYQ1 drives 600 V/1200 V IGBT modules in double-conversion UPS systems with reinforced isolation per TI datasheet. The 4 A/5 A drive capability handles high-power modules in 100 kVA+ systems, while >100 kV/us CMTI ensures noise immunity in the high-density switching environment. The 12 V UVLO option supports standard IGBT gate drive, and AEC-Q100 grade provides extra reliability margin for critical infrastructure applications.
推荐
推荐产品汇总
工程参考数据： UCC23513BQDWYQ1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | UCC23513BQDWYRQ1 | UCC23511BQDWYQ1 | UCC23313BQDWYQ1 |
|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | SOIC-6 (DWY) | SOIC-6 (DWY) - same | SOIC-6 (DWY) - same | SOIC-6 (DWY) - same |
| Peak Source Current | 4 A | 4 A | 1.5 A | 4 A |
| Peak Sink Current | 5 A | 5 A | 2 A | 5 A |
| Isolation Voltage | 5.7 kVRMS | 5.7 kVRMS | 5.7 kVRMS | 5.7 kVRMS |
| UVLO Options | 8V / 12V | 8V / 12V | 8V / 12V | 12V only |
| CMTI | >100 kV/us | >100 kV/us | >100 kV/us | >100 kV/us |
| Automotive Grade | AEC-Q100 Grade 1 | AEC-Q100 Grade 1 | AEC-Q100 Grade 1 | AEC-Q100 Grade 1 |
关键差异点
- Dual UVLO options (8V/12V) in same package （对比 UCC23313BQDWYQ1)
- Higher peak drive current for larger power modules （对比 UCC23511BQDWYQ1)
- Pin-to-pin opto-coupler compatibility （对比 ACPL-302J (Broadcom))
设计说明
Place a 1 uF/X7R 50V bypass capacitor as close as possible to the VCC2 pin (Pin 5) to provide peak gate-charge current. For SiC MOSFETs with Qg >30 nC, increase VCC2 bulk capacitance to 4.7 uF minimum. Add a 0.1 uF high-frequency ceramic in parallel. Per TI datasheet recommendations, insufficient VCC2 decoupling causes voltage droop during switching events that may trigger UVLO false faults.
Maintain minimum 8 mm creepage distance between input-side (Pins 1-4) and output-side (Pins 5-6) copper traces on the PCB top layer per IEC 60664-1 for reinforced isolation. The SOIC-6 (DWY) wide-body package provides the package-level clearance, but PCB layout must not violate clearance at any point including under the package. Route high-current gate-drive traces with 50 ohm controlled impedance for fastest switching.
Do not tie IN- to GND1 - the UCC23513BQDWYQ1 expects a differential input and treats IN- left floating as undefined logic. For single-ended PWM input, tie IN- to VDD1 (logic high) and drive IN+. Per TI datasheet pin description, IN- should be held above 0.7*VDD1 to enable the output. Also avoid leaving OUT unconnected during PCB test - use a 10 kOhm pull-down to prevent floating gate damage during power-up.
合规信息
AEC-Q100 Grade 1 qualified per TI datasheet. RoHS and REACH compliant. Lead-free and halogen-free per TI product page specifications.
