UM7006B - 600V 5.5W RF PIN Diode | Microchip Technology
부품 번호: UM7006B ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.85 | $985.00 |
| 500 | $8.4 | $4,200.00 |
| 1,000 | $7.1 | $7,100.00 |
UM7006B 개요
A PIN diode is a semiconductor device with an intrinsic (undoped) semiconductor region sandwiched between p-type and n-type regions. Under forward bias, carriers flood the intrinsic region, lowering its resistance to enable RF signal conduction. Under zero or reverse bias, the intrinsic region is depleted, producing a high-impedance state that blocks RF signals. This variable-impedance behavior makes PIN diodes the workhorse of RF and microwave switching, attenuation, and limiter circuits from HF through millimeter-wave bands.
Key features of the UM7006B include a maximum reverse working voltage of 600 V, continuous power dissipation of 5.5 W (derated above 25 C), a low series resistance in forward conduction, and a low junction capacitance that preserves insertion loss at high frequencies. The axial through-hole package provides robust mechanical strength suitable for military, aerospace, and industrial RF subsystems, and the hermetic body supports operation across the standard -55 C to +150 C military temperature range. The relatively low capacitance also enables use in fast-switching modulator and AGC loops.
Architecturally, the UM7006B uses a single PIN junction optimized for high-voltage standoff and continuous-wave power handling rather than ultra-fast switching speed. Compared with smaller signal-level PIN diodes such as the 1N4007-rectifier-style parts or the lower-voltage SMP1302 series, the UM7006B trades raw switching speed for higher breakdown voltage and dissipation, making it well suited to transmit-receive (T/R) switching in HF/VHF/UHF radios, broadband RF limiters, and antenna tuning networks where the diode sees sustained RF current.
Typical applications include T/R switches in HF/VHF/UHF transceivers, broadband RF limiter front ends for receiver protection, electronically tuned antenna matching networks, AGC attenuators in wideband receivers, and RF power monitoring probes. In each case the diode is biased through a resistor or choke and switched by toggling its DC bias between forward-conduction and reverse-bias states.
When designing with the UM7006B, account for the 5.5 W power derating curve and provide adequate lead-bend strain relief so that thermal stress does not crack the glass-to-metal hermetic seal. A small heatsink clip or ground-plane thermal land on the PCB can substantially improve long-term reliability in continuous-duty RF applications.
This page synthesizes distributor availability, drop-in alternative listings, and practical design notes that go beyond the manufacturer datasheet summary, helping engineers select the UM7006B with confidence.
드롭인 대체품: UM7006B — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: UM7006B (동일 폼 팩터 및 풋프린트) — 차이점: RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
UM7006
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UM7100
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UM7001
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UM7106
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UM7010
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UM7006B 최대 정격 & 전기적 특성
| Diode Type | PIN Diode (RF, Single Junction) |
| Number of Diodes | 1 |
| Configuration | Single |
| Maximum Reverse Voltage (Vr) | 600 V |
| Continuous Power Dissipation (Pd) | 5.5 W (at 25 C, derated above) |
| Package Type | Axial (through-hole, hermetic) |
| Terminal Position | AXIAL |
| Terminal Form | WIRE |
| Number of Terminals | 2 |
| Surface Mount | NO (through-hole axial) |
| Package Shape | ROUND (cylindrical glass/hermetic axial) |
| 동작 온도 범위 | -55 C to +150 C (military grade) |
| 실장 유형 | Through-Hole |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| MSL 레벨 | Not applicable (through-hole) |
UM7006B 핀 구성
| 핀 1 | Anode — Anode terminal (positive) of the PIN diode; forward-bias connection point |
| 핀 2 | Cathode — Cathode terminal (negative) of the PIN diode; reverse-bias and RF return |
일반적인 애플리케이션
UM7006B 적합 용도: 6 애플리케이션s: HF/VHF/UHF Transmit-Receive Switching, Broadband RF Limiter Front End, Electronically Tuned Antenna Matching Network, AGC Attenuator in Wideband Receivers, RF Power Monitoring Probe, High-Power RF Switch Matrix.
HF/VHF/UHF Transmit-Receive Switching
The UM7006B's 600 V reverse voltage and 5.5 W dissipation make it well suited to transmit-receive switching in HF/VHF/UHF transceivers. The PIN junction provides low forward-bias resistance for low receive-path insertion loss (typically <0.3 dB) and high reverse-bias impedance for transmit isolation. Compared with smaller SMP1302-class parts (50 V, 0.25 W), the UM7006B easily handles the RF voltage swings of 100 W-class HF transceivers without breakdown. Placed in a quarter-wave shunt switch with a DC bias choke, it delivers clean RX/TX commutation across 1.8 to 500 MHz. The 5.5 W dissipation also means the diode can survive momentary load-mismatch events that would destroy lower-rated PIN switches.
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Broadband RF Limiter Front End
In a broadband RF limiter the UM7006B clamps incoming RF signals to protect downstream low-noise amplifiers and mixers from high-level interference or co-located transmitter leakage. Its 600 V reverse standoff handles large transient RF voltages while the intrinsic-region carrier lifetime ensures fast turn-on. The 5.5 W dissipation supports continuous clipping of high-power signals without thermal failure. Designed into a shunt-diode limiter ahead of the LNA, the UM7006B keeps receive NF degradation minimal in normal operation but activates in microseconds during threat signals. Compared with schottky limiters, PIN-based limiters like the UM7006B handle higher peak power and survive longer-duration interference events.
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Electronically Tuned Antenna Matching Network
Antenna tuners and matching networks benefit from the UM7006B's variable-resistance behavior under DC bias, enabling electronically adjustable impedance matching across a wide frequency range. Forward bias lowers the diode's RF resistance to insert matching elements, while reverse bias removes them from the circuit. The 600 V rating ensures the diode tolerates the high RF voltages that appear on antenna ports during transmit. Used in ATU (antenna tuning unit) designs, the UM7006B enables fast, contact-free band switching versus mechanical relays. Its 5.5 W dissipation also handles continuous RF current during sustained transmissions without thermal rollover.
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AGC Attenuator in Wideband Receivers
AGC (automatic gain control) attenuators use PIN diodes as voltage-controlled resistive elements to provide continuous, low-distortion RF attenuation. The UM7006B's low series resistance at full forward bias minimizes insertion loss in the minimum-attenuation state, while its 600 V reverse standoff ensures linear behavior across a wide input signal range. Used in a pi-attenuator or bridged-T topology with two UM7006B diodes, designers achieve >30 dB dynamic range with low harmonic distortion. Compared with FET-based attenuators, PIN-based designs like the UM7006B offer higher IP3 and better large-signal handling for military and aerospace receivers.
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RF Power Monitoring Probe
RF power monitoring probes use PIN diodes as detectors to sample forward and reflected power along a transmission line. The UM7006B's low capacitance preserves linearity at high frequencies, while its 5.5 W dissipation allows continuous sampling of multi-watt RF signals without overheating. Inserted as a directional coupler detector element, the UM7006B produces a rectified DC output proportional to the applied RF amplitude. The 600 V reverse standoff handles peak voltages on high-SWR lines without breakdown. This makes it well suited to in-line power meters, antenna analyzers, and VSWR protection circuits in amateur and professional RF equipment.
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High-Power RF Switch Matrix
In RF switch matrices that route signals between multiple antennas, transceivers, or test instruments, the UM7006B serves as a robust shunt or series switching element. Its 600 V reverse standoff tolerates the worst-case RF voltage when multiple inputs combine constructively, and its 5.5 W dissipation ensures reliability in continuous-duty routing applications. Compared with electromechanical relays, PIN-diode switch matrices built around the UM7006B offer microsecond switching speeds and billion-cycle lifetimes. Designed into a 4x4 or 8x8 matrix with proper bias chokes, the UM7006B enables automated test equipment (ATE), direction-finding systems, and phased-array antenna feed networks.
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추천 제품 요약
엔지니어링 참조 데이터: UM7006B — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | UM7006 | UM7100 | UM7001 | UM7106 | UM7010 |
|---|---|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology (formerly Microsemi) | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Package | Axial (hermetic, through-hole) | Axial (hermetic, through-hole) - same | Axial (hermetic, through-hole) - same | Axial (hermetic, through-hole) - same | Axial (hermetic, through-hole) - same | Axial (hermetic, through-hole) - same |
| Continuous Power Dissipation | 5.5 W | 5.5 W | 5.5 W (same series rating) | 5.5 W (same series rating) | 5.5 W (same series rating) | 5.5 W (same series rating) |
| Diode Configuration | Single PIN | Single PIN | Single PIN | Single PIN | Single PIN | Single PIN |
| Number of Terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Mounting Type | Through-Hole | Through-Hole | Through-Hole | Through-Hole | Through-Hole | Through-Hole |
| Operating Temperature Range | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C (military) | -55 C to +150 C (military) | -55 C to +150 C (military) | -55 C to +150 C (military) |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- Higher reverse voltage rating than SMP1302-series PIN diodes (vs SMP1302)
- Higher power dissipation than small-signal PIN diodes (vs SMP1302 (0.25 W))
- Direct cross-brand replacement for legacy Microsemi UM7006 (vs UM7006 (legacy Microsemi))
설계 노트
The UM7006B is rated for 5.5 W continuous dissipation at 25 C ambient. Above 25 C the rating must be linearly derated toward 0 W at the +150 C military temperature limit. In continuous-duty RF switching applications, lead-bend strain relief and a small copper thermal land on the PCB can substantially improve long-term reliability and prevent thermal-cycle fatigue of the glass-to-metal hermetic seal.
When designing T/R switch or limiter PCBs with the UM7006B, place the diode as close as possible to the RF transmission line to minimize parasitic inductance. Use a DC bias choke (typically 1 to 10 uH for HF/VHF) to isolate the bias network from the RF path, and add a 100 pF to 10 nF RF bypass capacitor on the bias line near the diode. Keep the cathode lead short to ground to minimize series inductance in shunt-switch topologies.
Do not exceed the 600 V reverse standoff voltage; PIN diodes fail short-circuit when reverse breakdown occurs. Do not assume the diode is 'off' at zero bias - it has high but finite impedance, and some RF leakage will occur. For minimum RF leakage in the off state, apply a small reverse bias (5 to 50 V) rather than leaving the diode unbiased. Also verify that the bias-current source can supply the full forward current needed to achieve minimum series resistance (typically 50 to 100 mA for high-power PIN diodes).
규정 준수 정보
RoHS and REACH compliant per Microchip product page. Lead-free terminations. AEC-Q100 not applicable (this is a discrete RF diode, not an automotive-qualified IC). Hermetic glass package suitable for military temperature range.
