2ED2103S06FXUMA1 vs 2EDN7533RXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2103S06FXUMA1 disebabkan oleh Infineon dan 2EDN7533RXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED2103S06FXUMA1 2EDN7533RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver Dual-channel low-side gate driver
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Kemasan PG-DSO-8-69 (DSO-8 with exposed pad) PG-TSSOP-8 (HTSSOP) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40C to +125C —
Aras MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
Suhu Hubungan Operasi — -40 C to +150 C

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga