2EDR8258XXUMA1 vs 1ED3142MC12HXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDR8258XXUMA1 disebabkan oleh Infineon dan 1ED3142MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDR8258XXUMA1 1ED3142MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Isolated single-channel gate driver —
Isolation Technology Magnetic (coreless transformer) coupling Coreless transformer (galvanic)
Number of Channels 1 1
Bilangan Output 2 (high-side and low-side, half-bridge) 2 (separate source/sink)
Peak Source Current 5 A —
Peak Sink Current 9 A —
Galvanic Isolation (rms) 5700 Vrms —
Galvanic Isolation (peak) 8000 Vpk —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typical) 38 ns —
Driver Supply Voltage (VCC, VBS) 8 V to 20 V —
Input Supply Voltage (VDD) 3 V to 5.5 V —
Gambaran Suhu Operasi -40 °C to +125 °C —
Kemasan PG-DSO-14 (14-pin) PG-DSO-8 (PG-LDSO-8-1)
Protection Features UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection —
Logic Input Non-inverting, CMOS compatible —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Voltage — 3000 Vrms
Configuration — Inverting, Non-Inverting
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Propagation Delay (typ.) — 40 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

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