2N7002L vs BSS138NH6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002L disebabkan oleh onsemi dan BSS138NH6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002L BSS138NH6327XTSA2
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V —
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan SOT-23 (SOT-23-3) PG-SOT-23 (3-pin)
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi —
Status RoHS [DATA_NEEDED: RoHS status] —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Gambaran Suhu Operasi — [DATA_NEEDED: Tj max and operating range]
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
Boson Bebas — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Lead Plating — Pb-free
Marking Code — [DATA_NEEDED: top-side marking code]
Packaging — Tape and Reel

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