2N7002LT1G vs BSS123NH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002LT1G disebabkan oleh onsemi dan BSS123NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 2N7002LT1G | BSS123NH6327XTSA1 |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| Kemasan | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 | — |
| Kategori | Small Signal MOSFET | — |
| Technology | MOSFET | — |
| Manufacturer | onsemi (ON Semiconductor) | Infineon Technologies |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C (junction) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 190 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and max VGS(th)] |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS Compliance | — | Yes (Pb-free lead plating) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |