5CSEBA5U23A7N vs 5CSEBA5U23C7SN Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 5CSEBA5U23A7N disebabkan oleh Altera dan 5CSEBA5U23C7SN disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 5CSEBA5U23A7N | 5CSEBA5U23C7SN |
|---|---|---|
| Merek | Altera | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Cyclone V SE SoC FPGA | Cyclone V SE SoC FPGA |
| Logic Elements | 85 K | 85,000 LE |
| Hard Processor System | Dual ARM Cortex-A9 MPCore with CoreSight | — |
| HPS Maximum Frequency | 925 MHz | — |
| FPGA Fabric Speed Grade | 7 | — |
| User I/O Count | 145 | — |
| Embedded Memory | 4,450 Kbits (approximate) | — |
| DSP Blocks (18x18) | 87 | — |
| PLLs | 6 (approximate, per device family) | — |
| Kemasan | 672-UBGA (23x23 mm) | 672-pin UBGAMM (UBGA 23x23 mm) |
| Process Technology | 28 nm low-power | — |
| Configuration Method | Serial (EPCS) or parallel flash with AES-128/256 | — |
| Operating Temperature Grade | Automotive / -40C to +125C (per Altera ordering code 'A') | — |
| Jenis Pemasangan | Surface Mount (BGA) | — |
| Aras MSL | 3 (per JEDEC J-STD-020, typical for BGA packages) | — |
| Status RoHS | Compliant | Compliant |
| Processor | — | Single ARM Cortex-A9 MPCore with CoreSight |
| Processor Frequency | — | 800 MHz |
| Adaptive Logic Modules (ALMs) | — | 32,070 |
| Registers | — | [DATA_NEEDED: register count] |
| Memory (Embedded) | — | 4,050 Kbits M10K + 636 Kbits MLAB |
| DSP Blocks | — | [DATA_NEEDED: DSP block count] |
| Transceivers | — | Up to 6 (3.125 Gbps) |
| PCIe Hard IP | — | Gen2 x1/x2/x4 |
| Hard Memory Controller | — | DDR3, DDR3L, LPDDR2, LPDDR3 |
| HPS L1 Cache | — | 32 KB I-cache + 32 KB D-cache per core |
| HPS L2 Cache | — | 512 KB shared |
| Supply Voltage (Core) | — | 1.1 V |
| Suhu Operasi | — | -40C to +85C (industrial, speed grade 7) |
| Process Node | — | 28 nm low-power |