5CSEBA5U23A7N vs 5CSEBA5U23C7SN Karşılaştırma
Ayrıntılı yan yana karşılaştırma 5CSEBA5U23A7N tarafından Altera ve 5CSEBA5U23C7SN tarafından IntelAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | 5CSEBA5U23A7N | 5CSEBA5U23C7SN |
|---|---|---|
| Marka | Altera | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Family | Cyclone V SE SoC FPGA | Cyclone V SE SoC FPGA |
| Logic Elements | 85 K | 85,000 LE |
| Hard Processor System | Dual ARM Cortex-A9 MPCore with CoreSight | — |
| HPS Maximum Frequency | 925 MHz | — |
| FPGA Fabric Speed Grade | 7 | — |
| User I/O Count | 145 | — |
| Embedded Memory | 4,450 Kbits (approximate) | — |
| DSP Blocks (18x18) | 87 | — |
| PLLs | 6 (approximate, per device family) | — |
| Paket | 672-UBGA (23x23 mm) | 672-pin UBGAMM (UBGA 23x23 mm) |
| Process Technology | 28 nm low-power | — |
| Configuration Method | Serial (EPCS) or parallel flash with AES-128/256 | — |
| Operating Temperature Grade | Automotive / -40C to +125C (per Altera ordering code 'A') | — |
| Montaj Türü | Surface Mount (BGA) | — |
| MSL Seviyesi | 3 (per JEDEC J-STD-020, typical for BGA packages) | — |
| RoHS Durumu | Compliant | Compliant |
| Processor | — | Single ARM Cortex-A9 MPCore with CoreSight |
| Processor Frequency | — | 800 MHz |
| Adaptive Logic Modules (ALMs) | — | 32,070 |
| Registers | — | [DATA_NEEDED: register count] |
| Memory (Embedded) | — | 4,050 Kbits M10K + 636 Kbits MLAB |
| DSP Blocks | — | [DATA_NEEDED: DSP block count] |
| Transceivers | — | Up to 6 (3.125 Gbps) |
| PCIe Hard IP | — | Gen2 x1/x2/x4 |
| Hard Memory Controller | — | DDR3, DDR3L, LPDDR2, LPDDR3 |
| HPS L1 Cache | — | 32 KB I-cache + 32 KB D-cache per core |
| HPS L2 Cache | — | 512 KB shared |
| Supply Voltage (Core) | — | 1.1 V |
| İşletim Sıcaklığı | — | -40C to +85C (industrial, speed grade 7) |
| Process Node | — | 28 nm low-power |