BSC010N04LSATMA1 vs BSC014N04LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC010N04LSATMA1 disebabkan oleh Infineon dan BSC014N04LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ Aktif
Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC010N04LSATMA1 BSC014N04LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Breakdown Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max +/- 20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 38 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM rating]
On-Resistance RDS(on) Max @ VGS=10V 1.0 mOhm —
On-Resistance RDS(on) Test Condition VGS = 10 V, ID = 50 A —
Gate Threshold Voltage VGS(th) Typ 2 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation (Tc=25C) 139 W —
Power Dissipation (Ta=25C) 2.5 W —
Gambaran Suhu Operasi -55C to +150C -55 C to +150 C
Kemasan PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 1 (per JEDEC J-STD-020)
RoHS / Halogen-Free RoHS compliant, halogen-free —
Technology OptiMOS 5 OptiMOS 5 (trench, thin-wafer)
Avalanche Rated 100% avalanche tested —
Manufacturer Infineon Technologies —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, Ta) — 31 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) — 96 W
Power Dissipation (PD, Ta) — 2.5 W
Status RoHS — Compliant
Tradename — OptiMOS

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