BSC010N04LSATMA1 vs BSC014N04LSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC010N04LSATMA1 sa pamamagitan ng Infineon at BSC014N04LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC010N04LSATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Transistor Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 38 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM rating] |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | — |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | — |
| Gate Threshold Voltage VGS(th) Typ | 2 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (Tc=25C) | 139 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55 C to +150 C |
| Packhaging | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench, thin-wafer) |
| Avalanche Rated | 100% avalanche tested | — |
| Manufacturer | Infineon Technologies | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Tindminan RoHS | — | Compliant |
| Tradename | — | OptiMOS |