BSC011N03LSATMA1 vs BSC027N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC011N03LSATMA1 disebabkan oleh Infineon dan BSC027N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC011N03LSATMA1 BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 30V —
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 37 A —
Pulsed Drain Current (IDM) 100 A (TC) 194 A
On-State Resistance (RDS(on)) at VGS=10V 1.1 mOhm (typ) —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V (typ 1.6 V) —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (PD) at TC=25C 96 W —
Power Dissipation (PD) at TA=25C 2.5 W —
Gambaran Suhu Operasi -55C to +150C [DATA_NEEDED: Tj min/max]
Kemasan PG-TDSON-8-1 (SuperSO8) PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Part Number — BSC027N10NS5ATMA1
Technology — OptiMOS 5 (100V)
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga