BSC011N03LSATMA1 vs BSC027N10NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC011N03LSATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Active

Specification Comparison

Parameter BSC011N03LSATMA1 BSC027N10NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active NRND
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 30V —
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 37 A —
Pulsed Drain Current (IDM) 100 A (TC) 194 A
On-State Resistance (RDS(on)) at VGS=10V 1.1 mOhm (typ) —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V (typ 1.6 V) —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (PD) at TC=25C 96 W —
Power Dissipation (PD) at TA=25C 2.5 W —
Operating Temperature Range -55C to +150C [DATA_NEEDED: Tj min/max]
Package PG-TDSON-8-1 (SuperSO8) PG-TSON-8-3 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Part Number — BSC027N10NS5ATMA1
Technology — OptiMOS 5 (100V)
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Datasheets & Resources

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