BSC014N06NSATMA1 vs BSC0504NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N06NSATMA1 disebabkan oleh Infineon dan BSC0504NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC014N06NSATMA1 BSC0504NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Jenis Transistor N-Channel MOSFET N-channel MOSFET
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) Max +/- 20 V —
Continuous Drain Current (ID) at Ta 30 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) Typ @ VGS=10V 1.4 mOhm —
On-Resistance RDS(on) Max @ VGS=10V 1.45 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 156 W —
Gambaran Suhu Operasi -55C to +150C [DATA_NEEDED: operating temperature range]
Kemasan PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-6
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
Status RoHS Compliant unknown
Technology OptiMOS 5 (shielded-gate trench) —
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
Bilangan Pin — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
Tegangan Had Kepasaran — [DATA_NEEDED: gate threshold voltage]
Tegangan Panas — [DATA_NEEDED: thermal resistance]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

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