BSC014N06NSATMA1 vs IAUC120N06S5L032ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N06NSATMA1 disebabkan oleh Infineon dan IAUC120N06S5L032ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC014N06NSATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 (60 V) |
| Jenis Transistor | N-Channel MOSFET | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID) at Ta | 30 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.45 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 156 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55 C to +175 C (T_j) |
| Kemasan | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 5 (shielded-gate trench) | OptiMOS 5 Trench |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |