BSC018NE2LSATMA1 vs ISC011N04NM7VATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC018NE2LSATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC018NE2LSATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 29 A | — |
| On-Resistance RDS(on) @ VGS=10V | 1.8 mΩ (typical) | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Charge (Qg) | 39 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 2800 pF @ VDS=12V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C (TJ) | -55 °C to +175 °C (TJ) |
| Kemasan | PG-TDSON-8-1 (8-PowerTDFN) | PG-TDSON-8 (source-down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 25V (Trench) | Trench MOSFET, silicon |
| Aras MSL | [DATA_NEEDED: MSL level] | MSL 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |