BSC019N04NSGATMA1 vs BSC022N04LS6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N04NSGATMA1 disebabkan oleh Infineon dan BSC022N04LS6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC019N04NSGATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS (trench) | OptiMOS™ 6 (N-channel trench) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | 2.5 mΩ | — |
| RDS(on) typ at VGS=10V | 1.9 mΩ | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 125 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-1 (TDSON-8 FL) | SuperSO8 5x6 (PG-TDSON-8-1) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at Ta | — | 27 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Pulsed Drain Current (IDM) | — | 139 A |
| On-Resistance RDS(on) max | — | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 79 W |
| Channel Type | — | N-Channel |
| Kiraan Pin | — | 8 |
| Suhu Operasi | — | -55 C to +175 C (junction) |