BSC020N03LSGATMA1 vs BSZ065N03LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC020N03LSGATMA1 disebabkan oleh Infineon dan BSZ065N03LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC020N03LSGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 30V |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | — |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | -55C to +150C (junction) |
| Kemasan / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | PG-TSDSON-8-FL (S308) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Configuration | — | Single N-Channel |
| Technology | — | Trench MOSFET (OptiMOS) |
| Gate Drive (typical) | — | 4.5 V |