BSC020N03LSGATMA1 vs BSZ065N03LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC020N03LSGATMA1 sa pamamagitan ng Infineon at BSZ065N03LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC020N03LSGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 30V |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | — |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55C to +150C (junction) |
| Packhaging / Kaso | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | PG-TSDSON-8-FL (S308) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Configuration | — | Single N-Channel |
| Technology | — | Trench MOSFET (OptiMOS) |
| Gate Drive (typical) | — | 4.5 V |