BSC023N08NS5SCATMA1 vs BSC052N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC023N08NS5SCATMA1 disebabkan oleh Infineon dan BSC052N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC023N08NS5SCATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 | BSC052N08NS5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 202 A | — |
| Power Dissipation (PD, Tc=25°C) | 188 W | — |
| On-State Resistance RDS(on) typ. | 2.3 mΩ at VGS=10 V, ID=50 A | — |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V | — |
| Total Gate Charge Qg | 98 nC at VGS=10 V | — |
| Input Capacitance Ciss | 6.8 nF | — |
| Output Capacitance Coss | 74 pF | — |
| Thermal Resistance RthJC | 0.72 K/W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | -55C to +150C |
| Kemasan | PG-WSON-8-2 (SuperSO8 DSC) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 2.5-3.0 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |
| Aras MSL | — | 1 (unlimited) |