BSC027N06LS5ATMA1 vs BSC146N10LS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N06LS5ATMA1 disebabkan oleh Infineon dan BSC146N10LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif
Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC027N06LS5ATMA1 BSC146N10LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (logic-level)
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level Logic-level (typ. ~1.7 V)
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Gambaran Suhu Operasi -55°C to +150°C -55 C to +150 C (TJ max)
Kemasan / Case PG-TDSON-8-7 (SuperSO8 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at Tc=25 C — 44 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 14.6 mOhm
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 52 W
Kemasan — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Aras MSL — 1 (per JEDEC J-STD-020)
Avalanche Energy (EAS) — [DATA_NEEDED: EAS]

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