BSC028N06NSTATMA1 vs BSC016N06NSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC028N06NSTATMA1 disebabkan oleh Infineon dan BSC016N06NSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC028N06NSTATMA1 BSC016N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS
Part Number Base BSC028N06NS —
Technology MOSFET N-Channel (OptiMOS 5) OptiMOS 5
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.5 V to 3.5 V —
Total Gate Charge Qg 37 nC @ VGS=10V —
Input Capacitance Ciss 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] —
Output Capacitance Coss 825 pF —
Reverse Transfer Capacitance Crss 56 pF —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 100 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan PG-TDSON-8-7 (SuperSO8, 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Boson Bebas Yes —
Aras MSL 1 [DATA_NEEDED: MSL level]
AEC-Q101 Automotive Qualified [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] —
Part Number — BSC016N06NSTATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
Gambaran Suhu Operasi — -55 C to +150 C
Lead-Free — Yes

Laporan Datasheet & Sumber

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