BSC034N06NSATMA1 vs BSC039N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC034N06NSATMA1 disebabkan oleh Infineon dan BSC039N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC034N06NSATMA1 BSC039N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM pulsed value at TC]
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm 3.9 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 74 W —
Gambaran Suhu Operasi -55C to +150C —
Technology OptiMOS 5 OptiMOS 5 (TrenchFET-style)
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-6 (TDSON EP, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA — 19 A
Continuous Drain Current (ID) at TC — 100 A
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Power Dissipation at TA (PD) — 2.5 W
Power Dissipation at TC (PD) — 69 W
Suhu Hubungan Operasi — -55C to +150C
Bilangan Pin — 8
Gate Drive Voltage (VGS) — ±20 V max

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