BSC047N08NS3GATMA1 vs BSC016N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC047N08NS3GATMA1 disebabkan oleh Infineon dan BSC016N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC047N08NS3GATMA1 BSC016N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC047N08NS3GATMA1 —
Technology OptiMOS™ 3 (N-channel trench) OptiMOS™ 5
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at Tc 100 A —
Continuous Drain Current (ID) at Ta 18 A —
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V —
Power Dissition (Tc) 125 W —
Power Dissipation (Ta) 2.5 W —
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V) —
Avalanche Rated 100% tested —
Kemasan PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +175 °C (Tj) -55 °C to +150 °C
RoHS / Halogen-Free RoHS compliant, Halogen-free —
Product Series — OptiMOS™ 5 60V
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, TA) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 1.6 mΩ
Total Gate Charge (Qg) — 71 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 139 W
Aras MSL — 1 (unlimited)
Status RoHS — Compliant
Gate Drive (recommended) — 10 V

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga