BSC0501NSIATMA1 vs BSZ0501NSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0501NSIATMA1 disebabkan oleh Infineon dan BSZ0501NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0501NSIATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | OptiMOS 5 (25V/30V) |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 50 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg] |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-6 (SuperSO8) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Technology | Trench-gate OptiMOS 5 | — |
| Part Number | — | BSZ0501NSIATMA1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) at TA=25C | — | 25 A |
| Continuous Drain Current (Id) at TC=25C | — | 40 A |
| Power Dissipation (Pd) at TA=25C | — | 2.1 W |
| Power Dissipation (Pd) at TC=25C | — | 50 W |
| Operating Mode | — | Enhancement Mode |
| Configuration | — | Single with built-in diode |
| Number of Terminals | — | 8 |
| JESD-609 Code | — | e3 (matte tin) |
| Rds(on) at Vgs=10V (typ) | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: Tj max] |