BSC0502NSIATMA1 vs BSC0921NDIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0502NSIATMA1 disebabkan oleh Infineon dan BSC0921NDIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0502NSIATMA1 BSC0921NDIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (Trench MOSFET) OptiMOS 25V (N-channel)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TDSON-8 (SuperSO8 5x6) PG-TISON-8 (8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 17 A (per channel)
Pulsed Drain Current (IDM) — 31 A (per channel, package-limited)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
Suhu Operasi — -55C to +150C (junction)
Aras MSL — 1 (per Infineon OptiMOS family)
Primary Application — Synchronous buck converters, VRMs, POL regulators

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