BSC052N08NS5ATMA1 vs BSC023N08NS5SCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC052N08NS5ATMA1 disebabkan oleh Infineon dan BSC023N08NS5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC052N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | — |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55 °C to +175 °C |
| Kemasan | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-WSON-8-2 (SuperSO8 DSC) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited) | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 202 A |
| Power Dissipation (PD, Tc=25°C) | — | 188 W |
| On-State Resistance RDS(on) typ. | — | 2.3 mΩ at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | — | 3.8 V |
| Total Gate Charge Qg | — | 98 nC at VGS=10 V |
| Input Capacitance Ciss | — | 6.8 nF |
| Output Capacitance Coss | — | 74 pF |
| Thermal Resistance RthJC | — | 0.72 K/W |