BSC052N08NS5ATMA1 vs BSC023N08NS5SCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC052N08NS5ATMA1 sa pamamagitan ng Infineon at BSC023N08NS5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC052N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | — |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | -55 °C to +175 °C |
| Packhaging | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-WSON-8-2 (SuperSO8 DSC) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (unlimited) | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 202 A |
| Power Dissipation (PD, Tc=25°C) | — | 188 W |
| On-State Resistance RDS(on) typ. | — | 2.3 mΩ at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | — | 3.8 V |
| Total Gate Charge Qg | — | 98 nC at VGS=10 V |
| Input Capacitance Ciss | — | 6.8 nF |
| Output Capacitance Coss | — | 74 pF |
| Thermal Resistance RthJC | — | 0.72 K/W |