BSC052N08NS5ATMA1 vs BSC0902NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC052N08NS5ATMA1 disebabkan oleh Infineon dan BSC0902NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC052N08NS5ATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC052N08NS5ATMA1 —
Technology OptiMOS 5 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (ID, Tc) 95 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 5.2 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V —
Total Power Dissipation (Tc) 83 W —
Total Power Dissipation (Ta) 2.5 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TDSON-8 (SuperSO8) 5x6 mm PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Aras MSL 1 (unlimited) —
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Gambaran Suhu Operasi — -55C to +150C (Tj)
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Boson Bebas — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

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