BSC054N04NSGATMA1 vs IPD038N06NF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC054N04NSGATMA1 disebabkan oleh Infineon dan IPD038N06NF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC054N04NSGATMA1 | IPD038N06NF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC054N04NSGATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 81 A | — |
| Continuous Drain Current (ID) at Ta=25C | 17 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Power Dissipation at Tc=25C | 57 W | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Gate Drive Voltage (recommended) | 10 V | — |
| Lead-Free Reflow | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Continuous Drain Current (ID) at TA=25°C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 3.85 mΩ max |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Gate Charge (Qg) at VGS=10V | — | 68 nC |
| Input Capacitance (Ciss) | — | 6700 pF |
| Output Capacitance (Coss) | — | 670 pF |
| Reverse Transfer Capacitance (Crss) | — | 43 pF |
| Power Dissipation (PD) at TA=25°C | — | 3 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| Suhu Hubungan Operasi | — | -55°C to +175°C |
| Channel Mode | — | Enhancement |