BSC070N10NS5ATMA1 vs BSC098N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC070N10NS5ATMA1 disebabkan oleh Infineon dan BSC098N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC070N10NS5ATMA1 BSC098N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TC=25C 80 A —
RDS(on) max @ VGS=10V 7 mOhm —
Gate-Source Voltage (VGS) max 20 V [DATA_NEEDED: VGS max +/-]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] [DATA_NEEDED: Qg]
Power Dissition at TC=25C (Ptot) 83 W —
Power Dissipation at TA=25C 2.5 W —
Gambaran Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Typical Application Synchronous rectification in SMPS —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc=25C) — 60 A
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID Ta-rated value]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10V — 9.8 mOhm
Power Dissipation (Tc=25C) — 69 W
Power Dissipation (Ta) — 2.5 W
Diode Continuous Forward Current (IS) — 63 A (Tc=25C)
Diode Pulse Current (IS,pulse) — 240 A (Tc=25C)
Diode Forward Voltage (VSD) typ — 0.9 V (IF=30 A, Tj=25C)
Diode Forward Voltage (VSD) max — 1.1 V (IF=30 A, Tj=25C)
Gambaran Suhu Operasi — [DATA_NEEDED: Tj min/max]
Shipping Packaging — Tape & Reel (T/R)

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