BSC070N10NS5ATMA1 vs BSC118N10NSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC070N10NS5ATMA1 disebabkan oleh Infineon dan BSC118N10NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC070N10NS5ATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench) | Trench MOSFET |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 80 A | — |
| RDS(on) max @ VGS=10V | 7 mOhm | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Power Dissition at TC=25C (Ptot) | 83 W | — |
| Power Dissipation at TA=25C | 2.5 W | — |
| Gambaran Suhu Hubungan Operasi | -55 C to +150 C | — |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Typical Application | Synchronous rectification in SMPS | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 2 |
| FET Type | — | N-Channel |
| Mode | — | Enhancement (Normal Level) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Ta=25C | — | 11 A |
| Continuous Drain Current (ID) at Tc=25C | — | 71 A |
| Power Dissipation (PD) at Tc=25C | — | 114 W |
| Suhu Hubungan Operasi | — | -55 C to +150 C |
| Lead Plating | — | Pb-free |
| Boson Bebas | — | Yes |
| JEDEC Qualification | — | Qualified per target application |
| Target Application | — | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |