BSC072N08NS5ATMA1 vs BSC030N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC072N08NS5ATMA1 disebabkan oleh Infineon dan BSC030N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC072N08NS5ATMA1 BSC030N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family BSC072N08NS5 (OptiMOS 5) —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 OptiMOS 5
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) at Tc 74 A —
Drain-Source On-Resistance (RDS(on)) Max 7.2 mOhm at VGS=10V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: full min/max operating Tj] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Shipping Pack Tape & Reel (ATMA1) —
Standard Pack Quantity 5000 —
Product Type — N-Channel Power MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
Boson Bebas — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

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