BSC072N08NS5ATMA1 vs BSC040N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC072N08NS5ATMA1 disebabkan oleh Infineon dan BSC040N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC072N08NS5ATMA1 BSC040N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family BSC072N08NS5 (OptiMOS 5) —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 OptiMOS 5
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) at Tc 74 A —
Drain-Source On-Resistance (RDS(on)) Max 7.2 mOhm at VGS=10V —
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 139 W
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: full min/max operating Tj] -55C to +150C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] [DATA_NEEDED: Qg total]
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Shipping Pack Tape & Reel (ATMA1) —
Standard Pack Quantity 5000 —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga