BSC076N04NDATMA1 vs IAUC60N04S6L030HATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC076N04NDATMA1 disebabkan oleh Infineon dan IAUC60N04S6L030HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC076N04NDATMA1 IAUC60N04S6L030HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) Half-Bridge (2 N-Channel)
Drain-Source Voltage (VDS) max 40 V —
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) 2 V
On-Resistance RDS(on) max 7.6 mOhm —
Power Dissipation (Ta) 2.3 W —
Power Dissipation (Tc) 65 W —
Technology Trench MOSFET (OptiMOS 3) —
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
Suhu Hubungan Operasi -55 C to +175 C -55 C to +175 C
Kemasan / Case PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array —
Part Series — OptiMOS 6
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Maximum Power Dissipation (PD) at TC — 75 W
Kemasan — PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Automotive Qualification — AEC-Q101 (per part number suffix)
Status RoHS — Compliant
Aras MSL — 1 (per JEDEC J-STD-020)

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