BSC076N04NDATMA1 vs IAUC60N04S6L030HATMA1 对比
详细并排对比 BSC076N04NDATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC076N04NDATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | 2 V |
| On-Resistance RDS(on) max | 7.6 mOhm | — |
| Power Dissipation (Ta) | 2.3 W | — |
| Power Dissipation (Tc) | 65 W | — |
| Technology | Trench MOSFET (OptiMOS 3) | — |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| 工作结温 | -55 C to +175 C | -55 C to +175 C |
| 封装 / 外壳 | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | — |
| Part Series | — | OptiMOS 6 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| 封装 | — | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |